公开(公告)号：US20090117722A1

公开(公告)日：2009-05-07

申请号：US11493231

申请日：2006-07-26

Applicant: Jesse Berkley Tucker ,  Kevin Sean Matocha ,  Peter Wilson Waldrab ,  James Howard Schermerhorn ,  Matthew Morgan Edmonds

Inventor： Jesse Berkley Tucker ,  Kevin Sean Matocha ,  Peter Wilson Waldrab ,  James Howard Schermerhorn ,  Matthew Morgan Edmonds

IPC: H01L21/265

CPC classification number: H01L29/7802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66068

Abstract: A method for fabricating a semiconductor structure includes forming a carbon masking layer on a semiconductor layer, forming a protective layer on the carbon masking layer. The method further includes forming an opening in the protective layer and the carbon masking layer and processing the semiconductor layer through the opening to form a first processed region in the semiconductor layer. The method further includes enlarging the opening in the carbon masking layer and performing an additional processing step on the semiconductor layer through the enlarged opening to form a second processed region in the semiconductor layer.

Abstract translation: 一种制造半导体结构的方法包括在半导体层上形成碳掩蔽层，在碳屏蔽层上形成保护层。 该方法还包括在保护层和碳屏蔽层中形成开口，并通过开口处理半导体层，以在半导体层中形成第一处理区域。 该方法还包括扩大碳掩模层中的开口，并通过扩大开口在半导体层上执行附加处理步骤，以在半导体层中形成第二处理区域。

公开(公告)号：US07517807B1

公开(公告)日：2009-04-14

申请号：US11493231

申请日：2006-07-26

Applicant: Jesse Berkley Tucker ,  Kevin Sean Matocha ,  Peter Wilson Waldrab ,  James Howard Schermerhorn ,  Matthew Morgan Edmonds

Inventor： Jesse Berkley Tucker ,  Kevin Sean Matocha ,  Peter Wilson Waldrab ,  James Howard Schermerhorn ,  Matthew Morgan Edmonds

IPC: H01L21/302

CPC classification number: H01L29/7802 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66068

Abstract: A method for fabricating a semiconductor structure includes forming a carbon masking layer on a semiconductor layer, forming a protective layer on the carbon masking layer. The method further includes forming an opening in the protective layer and the carbon masking layer and processing the semiconductor layer through the opening to form a first processed region in the semiconductor layer. The method further includes enlarging the opening in the carbon masking layer and performing an additional processing step on the semiconductor layer through the enlarged opening to form a second processed region in the semiconductor layer.

Abstract translation: 一种制造半导体结构的方法包括在半导体层上形成碳掩蔽层，在碳屏蔽层上形成保护层。 该方法还包括在保护层和碳屏蔽层中形成开口，并通过开口处理半导体层，以在半导体层中形成第一处理区域。 该方法还包括扩大碳掩模层中的开口，并通过扩大开口在半导体层上执行附加处理步骤，以在半导体层中形成第二处理区域。