公开(公告)号：US06527856B2

公开(公告)日：2003-03-04

申请号：US09792040

申请日：2001-02-22

申请人： David W. Abraham ,  Matthew Copel ,  James Misewich ,  Alejandro G. Schrott ,  Ying Zhang

发明人： David W. Abraham ,  Matthew Copel ,  James Misewich ,  Alejandro G. Schrott ,  Ying Zhang

IPC分类号： C30B2502

CPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/225 ,  C30B33/12 ,  H01L21/02197 ,  H01L21/02359 ,  H01L21/31691 ,  H01L39/2458

摘要： A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels. A-site terminated surfaces produced by this invention allow for the epitaxial growth of heterostructures, such as cuprate films for use as high-Tc superconductor films, Josephson tunnel junctions, superlattices and OxFET, with improved quality.

公开(公告)号：US06562633B2

公开(公告)日：2003-05-13

申请号：US09791640

申请日：2001-02-26

申请人： James Misewich ,  Christopher B. Murray ,  Alejandro G. Schrott

发明人： James Misewich ,  Christopher B. Murray ,  Alejandro G. Schrott

IPC分类号： H01L2100

CPC分类号： G01B11/165 ,  Y10S977/859 ,  Y10S977/863 ,  Y10S977/869 ,  Y10S977/881 ,  Y10S977/962

摘要： A method of assembling arrays of small particles or molecules using an atomic force microscope to define ferroelectric domains includes depositing a ferroelectric thin film upon a substrate forming workpiece, then using an atomic force microscope having a conductive, tip for generating a pattern on this thin film to define desired nano-circuit patterns. Next, exposure of this thin film to a solution containing chemical species which selectively adsorb or accumulate under the influence of electrophoretic forces in selected regions of this thin film.