公开(公告)号：US09708728B1

公开(公告)日：2017-07-18

申请号：US13550050

申请日：2012-07-16

申请人： Jeffrey Brian Whalen ,  Theo Siegrist

发明人： Jeffrey Brian Whalen ,  Theo Siegrist

IPC分类号： C30B19/02 ,  C30B15/00 ,  C30B9/10 ,  C30B29/22

CPC分类号： C30B15/00 ,  C30B9/10 ,  C30B19/02 ,  C30B29/22 ,  C30B29/225

摘要： A process for the growth of new, and difficult-to-synthesize, metal oxide, and other mixed anion oxide-based, single crystals from a molten metal flux. Metal fluxes are new for the growth of metal oxide single crystals. Preliminary reactions proved that new phases and phases that normally require costly, extreme conditions do grow as single crystals. Batches of individual reactions are heat-treated to synthesize single crystals comprised of oxygen with one or more transition, alkaline-earth and/or lanthanide metals, and can also include other anions like chalcogens or pnictogens, or halides. The reactivity and the propensity for crystallization of charge compensated single crystals from alkaline earth fluxes have been made evident by the results presented here.

公开(公告)号：US20160176713A1

公开(公告)日：2016-06-23

申请号：US14910095

申请日：2014-07-31

申请人： NATIONAL UNIVERSITY OF SINGAPORE

发明人： Kian Ping LOH ,  Libo GAO ,  Antonio Helio CASTRO NETO

IPC分类号： C01B31/04 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02107 ,  C01B32/186 ,  C01B32/194 ,  C23C16/01 ,  C23C16/0263 ,  C23C16/0281 ,  C23C16/26 ,  C30B23/02 ,  C30B29/225 ,  C30B29/26 ,  H01L21/02002 ,  H01L21/02326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/02694 ,  H01L21/3205 ,  H01L29/1606 ,  H01L29/78684 ,  H01L39/2422

摘要： A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

摘要翻译： 公开了一种在制造包含基底上的二维晶体薄膜的部件的原位转移的方法。 在一个实施方案中，该方法包括形成包含聚合物，二维结晶薄膜，金属催化剂和基底的层状结构。 作为二维结晶薄膜的生长介质的金属催化剂通过渗透液体被蚀刻和去除，以使二维结晶薄膜直接转移到下面的基底上。

公开(公告)号：US08748350B2

公开(公告)日：2014-06-10

申请号：US13088182

申请日：2011-04-15

申请人： Amit Goyal ,  Mariappan Paranthaman ,  Sung-Hun Wee

发明人： Amit Goyal ,  Mariappan Paranthaman ,  Sung-Hun Wee

IPC分类号： H01B12/00 ,  H01L39/24 ,  H01L39/12

CPC分类号： H01B12/00 ,  C30B5/00 ,  C30B29/22 ,  C30B29/225 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2425 ,  H01L39/2461

摘要： A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

摘要翻译： 制造超导制品的方法包括提供双轴织构化基底的步骤。 然后沉积种子层。 种子层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的稀土或过渡金属阳离子。 外延生长超导体层，使得超导体层由种子层支撑。

公开(公告)号：US20090239753A1

公开(公告)日：2009-09-24

申请号：US12278369

申请日：2007-01-17

申请人： Shuji Hahakura ,  Kazuya Ohmatsu ,  Munetsugu Ueyama ,  Katsuya Hasegawa

发明人： Shuji Hahakura ,  Kazuya Ohmatsu ,  Munetsugu Ueyama ,  Katsuya Hasegawa

IPC分类号： H01L39/02 ,  H01L39/24 ,  H01L39/00

CPC分类号： H01L39/2422 ,  C30B19/02 ,  C30B23/02 ,  C30B29/225 ,  H01F6/06 ,  H01L39/2425 ,  H01L39/2448

摘要： A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.

摘要翻译： 制造超导薄膜材料的方法包括通过气相法形成超导层的气相步骤和通过液相法形成超导层的液相步骤，使得后一超导层与 前超导层。 优选地，该方法还包括在前一超导层和金属基底之间形成中间层的步骤。 金属基板由金属制成，优选中间层由具有岩石型，钙钛矿型和烧绿石型晶体结构的氧化物构成，前者的超导层和后级超导层均具有RE123组成 。 因此，可以提高临界电流值。

公开(公告)号：US07335283B2

公开(公告)日：2008-02-26

申请号：US10363050

申请日：2001-08-24

申请人： Yoshiko Ihara, legal representative ,  Hideyo Ihara, legal representative ,  Hidetaka Ihara, legal representative ,  Gen-ei Ihara, legal representative ,  Chiaki Ihara, legal representative ,  Sundaresan Athinarayanan ,  JiaCai Nie

发明人： Hideo Ihara

IPC分类号： C23C14/00

CPC分类号： H01L39/2435 ,  C04B35/45 ,  C04B35/4512 ,  C04B35/4521 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3289 ,  C04B2235/3293 ,  C04B2235/3296 ,  C04B2235/3409 ,  C04B2235/3418 ,  C30B23/002 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  G11B11/10586 ,  H01L39/126

摘要： A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness. The first sputtering target for the charge supply block has a charge supply block composition in which Cu atoms are partly substituted with atoms of an element having a structure stabilizing effect.

摘要翻译： 能够容易地和在低温下制造结晶性优异的复合氧化物薄膜的方法和装置，具有根据需要控制基本晶胞结构的能力，并且不需要后退火，以及复合材料 氧化物薄膜，特别是Cu组高温超导薄膜。 通过从具有电荷供给块（1）的组成的溅射靶交替溅射，在基板上形成由电荷供给块（1）和超导块（2）构成的薄Cu组高温超导膜 ）和具有超导块（2）的组成的溅射靶，并重复这样的交替溅射操作，使膜达到所需厚度所需的次数。 用于电荷供应块的第一溅射靶具有电荷供应块组成，其中Cu原子被具有结构稳定作用的元素的原子部分取代。

公开(公告)号：US20060009362A1

公开(公告)日：2006-01-12

申请号：US10526896

申请日：2003-10-29

申请人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

发明人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

IPC分类号： H01L39/24

CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461

摘要： The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.

摘要翻译： 本发明涉及一种在底层上形成质量好的单晶薄膜的技术。 这种技术适用于提供可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在基底上形成的单晶薄膜由与底层不同的物质制成。 在基底和薄膜中共同包含的特定原子层在基底和薄膜之间的界面处共享。 在与接口相邻的区域中，与界面相比，薄膜的单元电池为100个或更少，根据晶体取向为±2度以下的取向生长的结晶区域的比例 基质为50％以上。

公开(公告)号：US06929695B2

公开(公告)日：2005-08-16

申请号：US10363392

申请日：2001-08-31

申请人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

发明人： Hideomi Koinuma ,  Masashi Kawasaki ,  Yuji Matsumoto

IPC分类号： C30B29/22 ,  C30B19/04 ,  C30B23/02 ,  C30B25/02 ,  H01L39/24 ,  C30B25/12 ,  C30B25/14

CPC分类号： H01L39/2438 ,  C30B19/04 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

摘要： The present invention is an tri-phase epitaxy method for preparing a single crystal oxide thin film, comprising the steps of depositing on a substrate an oxide thin film serving as a seed layer and having the same composition as that of an oxide thin film to be formed, depositing on the seed layer a thin film comprising a substance capable of being melted and liquidized by heat from the substrate and dissolving the oxide to be subsequent by deposited onto the seed layer, heating the substrate to form a liquid layer, and depositing an oxide on the seed layer through the liquid layer by use of a vapor-phase epitaxy method to form the single crystal oxide thin film. In this method, the oxygen partial pressure on the liquid layer is set in the range of 1.0 to 760 Torr during the film-forming step.

摘要翻译： 本发明是一种用于制备单晶氧化物薄膜的三相外延法，包括以下步骤：在基片上沉积用作种子层的氧化物薄膜并具有与氧化物薄膜相同的组成为 在种子层上沉积薄膜，该薄膜包括能够通过热从基底熔化和液化的物质，并将待沉积的氧化物溶解到种子层上，加热基底以形成液体层，并沉积 通过使用气相外延法通过液体层在种子层上形成氧化物以形成单晶氧化物薄膜。 在该方法中，在成膜步骤中将液体层上的氧分压设定在1.0至760托的范围内。

公开(公告)号：US06855670B1

公开(公告)日：2005-02-15

申请号：US07528270

申请日：1990-05-24

申请人： Jagannatha Gopalakrishnan ,  Arthur William Sleight ,  Munirpallam Appadorai Subramanian

发明人： Jagannatha Gopalakrishnan ,  Arthur William Sleight ,  Munirpallam Appadorai Subramanian

IPC分类号： C01G29/00 ,  C04B35/45 ,  C30B1/12 ,  H01L39/12 ,  H01L39/24 ,  C04B101/00 ,  H01B12/00

CPC分类号： H01L39/2419 ,  C01G29/006 ,  C01P2002/77 ,  C01P2006/32 ,  C01P2006/40 ,  C01P2006/60 ,  C04B35/4521 ,  C30B1/12 ,  C30B29/22 ,  C30B29/225 ,  H01L39/126 ,  Y10S505/782

摘要： Compositions having the nominal formula BiaSrbCacCu3Ox wherein a is from about 1 to 3, b is from about ⅜ to 4, c is from about {fraction (3/16)} to 2, x=(1.5 a+b+c+y) where y is from about 2 to 5, with the proviso that “b+c” is from about {fraction (3/2)} to 5, containing a metal oxide phase of the formula Bi2Sr3−zCazCu2O8+w wherein z is from about 0.1 to 0.9 w is greater than zero but less than 1, are superconducting. Processes for manufacturing such compositions and for using them are disclosed.

摘要翻译： 具有标称式a的组合物为约1至3，b为约3/8至4，c为约{分数（3/16至2，x =（1.5a + b + c + y），其中 约2至5，条件是“b + c”为大约{级分（3/2至5，含有式Bi2Sr3-zCazCu2O8 + w的金属氧化物相，其中z为约0.1至0.9w大于 零但小于1，是超导的。公开了制造这种组合物和使用它们的方法。

公开(公告)号：US06852160B2

公开(公告)日：2005-02-08

申请号：US10453470

申请日：2003-06-03

申请人： Sankar Sambasivan ,  Scott A. Barnett ,  Ilwon Kim ,  John Rechner

发明人： Sankar Sambasivan ,  Scott A. Barnett ,  Ilwon Kim ,  John Rechner

IPC分类号： B32B9/00 ,  C23C8/02 ,  C30B23/02 ,  C30B29/22 ,  C30B33/00 ,  H01L39/24 ,  C30B25/02

CPC分类号： H01L39/2461 ,  C23C8/02 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  C30B29/38 ,  C30B33/005

摘要： The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

摘要翻译： 本发明涉及从氮化物前体转化的合适基底上的氧化物。

公开(公告)号：US20040254078A1

公开(公告)日：2004-12-16

申请号：US10487415

申请日：2004-02-23

发明人： Sundaresan Athinarayanan ,  Hideo Ihara ,  Yoshiko Ihara ,  Hideyo Ihara ,  Hidetaka Ihara ,  Gen-ei Ihara ,  Chiaki Ihara

IPC分类号： H01B001/00

CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2458 ,  Y10S505/782 ,  Y10S505/783

摘要： Disclosed is an oxide high temperature superconductor having a crystalline substrate of low dielectric constant formed thereon with a thin film of the oxide high temperature superconductor that is high in crystallographic integrity and excels in crystallographic orientation as well as a method of making such an oxide high temperature superconductor. In fabricating an oxide high temperature superconductor containing Ba as a constituent element and having such a substrate formed thereon with a thin film of the oxide high temperature superconductor, a first buffer layer composed of CeO3 is formed on a sapphire R (1, null1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, null1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr is formed on the first buffer layer made of CeO3 to allow the oxide high temperature superconductor thin film to be formed on the second buffer layer. Thus, if the first buffer layer for reducing the lattice mismatch between the sapphire R (1, null1, 0, 2) face substrate and the oxide high temperature superconductor thin film is liable to an interfacial reaction with Ba from the oxide high temperature superconductor thin film, the second buffer layer prevents the interfacial reaction, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels on both crystallographic integrity and crystallographic orientation.

摘要翻译： 公开了一种氧化物高温超导体，其具有在其上形成的具有高结晶学完整性和优异的晶体取向的氧化物高温超导体的薄膜的低介电常数的结晶衬底，以及制造这种氧化物高温 超导体。 在制造含有Ba作为构成元素的氧化物高温超导体并且在其上形成有氧化物高温超导体的薄膜的基板上，在蓝宝石R（1，-1，...）上形成由CeO 3构成的第一缓冲层， 0，2）面板，用于减少蓝宝石R（1，-1,0,2）面基板和氧化物高温超导体薄膜之间的晶格失配，以及由这种氧化物高温超导体构成的第二缓冲层， 在由CeO 3制成的第一缓冲层上形成Ba被Sr取代的Ba，以在第二缓冲层上形成氧化物高温超导体薄膜。 因此，如果用于降低蓝宝石R（1，-1,0,2）面对衬底和氧化物高温超导体薄膜之间的晶格失配的第一缓冲层易于与来自氧化物高温超导体的Ba的界面反应 薄膜，第二缓冲层防止界面反应，从而允许在结晶学完整性和晶体取向上均优异的氧化物高温超导体薄膜的外延生长。