公开(公告)号：US06636653B2

公开(公告)日：2003-10-21

申请号：US09775867

申请日：2001-02-02

Applicant: Robert F. Miracky ,  Jason D. Reed ,  Kai Hu ,  Claude Hilbert

Inventor： Robert F. Miracky ,  Jason D. Reed ,  Kai Hu ,  Claude Hilbert

IPC: G02B612

CPC classification number: G02B6/3524 ,  G02B6/1245 ,  G02B6/32 ,  G02B6/3526 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/3588 ,  G02B6/3598 ,  G02B6/4204 ,  G02B6/4232 ,  G02B6/4249 ,  G02B6/43 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01039 ,  H01S3/101 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/183 ,  H01L2924/00014

Abstract: An apparatus and method of fabricating and operating a micro-electromechanical systems (MEMS) integrated optical structure is disclosed. Micro-optics is integrated with MEMS actuators to provide a building block for a micro-optical communication device. Such micro-optical communication device may realize a variety of optical communication systems including optical interconnects, laser communications, or fiber optic switches. In accordance with one aspect of the present invention, a micro-optical element such as a micro-lens is advantageously integrated with an actuator such as MEMS comb drive actuator to form a MEMS lens assembly. The MEMS lens assembly is further coupled to an optical source which may provide a MEMS integrated micro-optical communication device. This integration substantially obviates the generally needed external or manual positioning of the micro-optical element to align a light beam or an optical signal being emitted from the optical source. The MEMS comb drive actuator, responsive to an actuation force, selectively positions the micro-optical element. By appropriately micro positioning a micro-optical element such as a micro-lens relative to an optical source, such as an input optical fiber or a laser diode, a focused light beam or an optical signal may be coupled to a respective optical fiber or a detector. In one embodiment, a commonly used flip chip module assembly technique may be adapted for bonding the MEMS lens assembly to a carrier substrate, which preferably receives the optical source. The carrier substrate is generally disposed on a host assembly. A flip chip based passive alignment of the MEMS lens assembly could be provided. Additionally, an active alignment of the light beam or optical signal with an optical detector may be provided, which can be maintained through a feedback loop.

公开(公告)号：US20130069110A1

公开(公告)日：2013-03-21

申请号：US13565960

申请日：2012-08-03

Applicant: Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

Inventor： Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

IPC: H01L29/12 ,  H01L21/20

CPC classification number: H01L29/245 ,  H01L21/443 ,  H01L29/45 ,  H01L35/08 ,  H01L35/16

Abstract: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10−6 ohms·cm2.

Abstract translation: 公开了与半导体结构的低电阻率接触的实施例。 在一个实施例中，半导体结构包括半导体层，在半导体层的表面上具有低带隙的半导体接触层和与半导体层相对的半导体接触层的表面上的电极。 半导体接触层的带隙在0〜0.2电子伏特（eV）的范围内，更优选在0〜0.1eV的范围内，更优选在0〜0.05eV的范围内 。 优选地，半导体层是p型。 在一个具体实施例中，半导体接触层和电极与p型半导体层形成欧姆接触，并且由于半导体接触层的低带隙，欧姆接触电阻率小于1× 10-6欧姆·cm2。

公开(公告)号：US06437965B1

公开(公告)日：2002-08-20

申请号：US09724292

申请日：2000-11-28

Applicant: Calvin L. Adkins ,  David John Tammen ,  Michael Alan Gribbons ,  Jason D. Reed ,  Claude Hilbert ,  Richard D. Nelson

Inventor： Calvin L. Adkins ,  David John Tammen ,  Michael Alan Gribbons ,  Jason D. Reed ,  Claude Hilbert ,  Richard D. Nelson

IPC: H01G4005

CPC classification number: H01G5/16 ,  B81B3/0008

Abstract: An electronic device, such as a filter or phase shifter, for example, includes a substrate, and a MEMS capacitor on the substrate and having a plurality of selectable capacitance values. The MEMS capacitor preferably includes a lower capacitor electrode on the substrate, and a movable bridge including end portions connected to the substrate laterally adjacent the lower capacitor electrode. The movable bridge may also include a conductive medial portion between the end portions defining an upper capacitor electrode suspended above the lower capacitor electrode and being movable between an upper position and a lower position by an electrostatic force generated between the capacitor electrodes. The upper and lower positions provide respective low and high selectable capacitance values. Moreover, the movable bridge may further include at least one travel limiting portion between the end portions for engaging adjacent substrate portions to keep the upper capacitor electrode in a predetermined spaced relation from the lower capacitor electrode when in the lower position. This travel limiting feature of the MEMS capacitor is relatively easy to fabricate and avoids the sticking or stiction problem of some other types of MEMS capacitors.

Abstract translation: 例如，诸如滤波器或移相器的电子器件包括衬底和衬底上的MEMS电容器，并且具有多个可选择的电容值。 MEMS电容器优选地包括在基板上的下电容器电极和可移动​​桥，该可移动桥包括在与下电容器电极相邻的基板上连接到基板的端部。 可移动桥还可以包括在端部之间的导电中间部分，其限定悬挂在下电容器电极上方的上电容器电极，并且可以通过在电容器电极之间产生的静电力在上位置和下​​位置之间移动。 上部和下部位置提供相应的低和高可选择的电容值。 此外，可移动桥可以还包括在端部之间的至少一个行进限制部分，用于接合相邻的基板部分，以在较低位置时将上电容器电极与下电容器电极保持预定间隔的关系。 MEMS电容器的行程限制特性相对容易制造，避免了其他类型的MEMS电容器的粘附或粘滞问题。

公开(公告)号：US08564129B2

公开(公告)日：2013-10-22

申请号：US13565960

申请日：2012-08-03

Applicant: Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

Inventor： Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

IPC: H01L23/48 ,  H01L29/43

CPC classification number: H01L29/245 ,  H01L21/443 ,  H01L29/45 ,  H01L35/08 ,  H01L35/16

Abstract: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10−6 ohms·cm2.

Abstract translation: 公开了与半导体结构的低电阻率接触的实施例。 在一个实施例中，半导体结构包括半导体层，在半导体层的表面上具有低带隙的半导体接触层和与半导体层相对的半导体接触层的表面上的电极。 半导体接触层的带隙在0〜0.2电子伏特（eV）的范围内，更优选在0〜0.1eV的范围内，更优选在0〜0.05eV的范围内 。 优选地，半导体层是p型。 在一个具体实施例中，半导体接触层和电极与p型半导体层形成欧姆接触，并且由于半导体接触层的低带隙，欧姆接触电阻率小于1× 10-6欧姆·cm2。