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    Electrode for lead-salt diodes
    1.
    发明授权
    Electrode for lead-salt diodes 失效
    铅盐二极管电极

    公开(公告)号：US4350990A

    公开(公告)日：1982-09-21

    申请号：US150248

    申请日：1980-05-16

    申请人： Wayne Lo

    发明人： Wayne Lo

    IPC分类号： H01L29/24 ,  H01L33/26 ,  H01L33/40 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

    CPC分类号： H01L33/40 ,  H01L29/245 ,  H01L2224/85801 ,  H01L33/26

    摘要： A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is used on lead-sulfide-selenide, lead-tin-selenide, and lead-tin-telluride of high tin content. A Pt-Au-Pt-Sn contact is preferred for lead-tin-telluride of low tin content. Lower contact resistance is attained if P type lead-tin-selenide and lead-tin-telluride surfaces are previously doped with oxygen, and the initial metal layer is applied in a manner that does not remove it.

    摘要翻译： 用于铅 - 盐半导体表面的显着更稳定的欧姆接触，特别是用于红外激光器。 接触层有铂，钯或镍层与金交替，然后用铟覆盖。 Au-Pd-Au-In接触用于硫化铅 - 硒化铅，锡 - 硒化锡和高锡含量的铅 - 锡 - 碲化物。 对于低锡含量的铅锡碲化物，优选Pt-Au-Pt-Sn接触。 如果P型铅锡 - 硒化物和铅 - 锡 - 碲化物表面预先掺杂氧，则获得较低的接触电阻，并且以不除去初始金属层的方式施加初始金属层。

    Low resistivity contact
    3.
    发明授权
    Low resistivity contact 有权
    低电阻接触

    公开(公告)号：US08564129B2

    公开(公告)日：2013-10-22

    申请号：US13565960

    申请日：2012-08-03

    申请人： Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

    发明人： Robert Joseph Therrien ,  Jason D. Reed ,  Jaime A. Rumsey ,  Allen L. Gray

    IPC分类号： H01L23/48 ,  H01L29/43

    CPC分类号： H01L29/245 ,  H01L21/443 ,  H01L29/45 ,  H01L35/08 ,  H01L35/16

    摘要： Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10−6 ohms·cm2.

    摘要翻译： 公开了与半导体结构的低电阻率接触的实施例。 在一个实施例中，半导体结构包括半导体层，在半导体层的表面上具有低带隙的半导体接触层和与半导体层相对的半导体接触层的表面上的电极。 半导体接触层的带隙在0〜0.2电子伏特（eV）的范围内，更优选在0〜0.1eV的范围内，更优选在0〜0.05eV的范围内 。 优选地，半导体层是p型。 在一个具体实施例中，半导体接触层和电极与p型半导体层形成欧姆接触，并且由于半导体接触层的低带隙，欧姆接触电阻率小于1× 10-6欧姆·cm2。

    MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE
    4.
    发明申请
    MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE 审中-公开
    多层超级质量好的热电材料和模块

    公开(公告)号：US20110284048A1

    公开(公告)日：2011-11-24

    申请号：US13073102

    申请日：2011-03-28

    申请人： Frank HAASS ,  Norbert B. ELSNER ,  Laverne Elsner ,  Saeid GHAMATY ,  Daniel KROMMENHOEK

    发明人： Frank HAASS ,  Norbert B. ELSNER ,  Laverne Elsner ,  Saeid GHAMATY ,  Daniel KROMMENHOEK

    IPC分类号： H01L35/12 ,  H01L35/34

    CPC分类号： H01L35/26 ,  H01L29/155 ,  H01L29/245 ,  H01L35/14

    摘要： A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150° C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm−3 and in the barrier layers is 1013 to 1018 cm−3.

    摘要翻译： 包括至少10个交替层的多层超晶格量子阱热电材料具有每个小于50nm的层厚度，所述交替层是导电和阻挡层，其中所述层结构没有显示出可辨别的相互扩散，导致破裂 或在50〜150℃的温度下热处理时的层边界溶解至少100小时，导电层中的掺杂材料的浓度为1018〜1023cm-3，在 阻挡层为1013〜1018cm-3。

    PbS.sub.x Se.sub.1-x semiconductor
    9.
    发明授权
    PbS.sub.x Se.sub.1-x semiconductor 失效
    PbSxSe1-x半导体

    公开(公告)号：US4339764A

    公开(公告)日：1982-07-13

    申请号：US23983

    申请日：1979-03-26

    申请人： Richard B. Schoolar

    发明人： Richard B. Schoolar

    IPC分类号： C30B23/02 ,  H01L21/363 ,  H01L29/24 ,  H01L27/14

    CPC分类号： H01L29/245 ,  C30B23/02 ,  C30B29/48 ,  H01L21/0242 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631

    摘要： A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb].sub.a [S.sub.x Se.sub.1-x ].sub.1-a wherein x varies between one and zero, inclusive, and a=0.500.+-.0.003, deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties.

    摘要翻译： 用于制备单相硫化铅/硒化物[Pb] a [SxSe1-x] 1-a的单个和多个外延层的高温方法，其中x在1和0之间变化，包括1和0，a = 0.500 + -0.003，沉积在与同时升华的铅合金和硫族化合物源保持接近热力学平衡的氟化钡BaF2的基底上。 在制备过程中，将基板暴露于由双区双腔炉的单个烟囱发出的蒸气中，从而提供均匀且预定的电气和光学特性的外延层。