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公开(公告)号：US4298817A
公开(公告)日：1981-11-03
申请号：US66058
申请日：1979-08-13
Applicant: Jean-Denis Carette , Claude Bouchard
Inventor： Jean-Denis Carette , Claude Bouchard
Abstract: The ion-electron source described herein comprises an electron multiplier consisting of a straight tubular channel that includes an emitting region for the production of secondary electrons by ion impact, the channel being narrowed near one of its extremities; an inlet is provided by which gas at a predetermined pressure can be introduced in the channel multiplier; a sufficient voltage polarization allows the multiplier to operate in a self-sustained cascade mode; the source also includes an aperture by which ion current is ejected.
Abstract translation: 本文所述的离子电子源包括由直管状通道组成的电子倍增器，其包括用于通过离子冲击产生二次电子的发射区域，所述通道在其一端附近变窄; 提供入口，通过该入口可以在通道倍增器中引入预定压力的气体; 足够的电压极化允许乘法器以自维持级联模式工作; 该源还包括一个通过其离开电流的孔径。
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公开(公告)号：US4305744A
公开(公告)日：1981-12-15
申请号：US187404
申请日：1980-09-15
Applicant: Jean-Denis Carette , Claude Bouchard
Inventor： Jean-Denis Carette , Claude Bouchard
CPC classification number: C04B41/009 , C04B41/5022 , C04B41/86 , H01J9/125 , H01J2201/32
Abstract: An electron multiplier device formed of the combination of a support made of high temperature-resisting electrically-insulating ceramic material and of a layer of secondary electron emitting semi-conducting glass material fused to the inner wall of the ceramic material and method of making; the multiplier device is further characterized in that the ceramic material and the glass material have substantially the same coefficient of expansion. The device is made by pouring molten semi-conducting glass into at least one channel in a ceramic support having a higher fusion point than that of the glass and the same coefficient of expansion, flowing the glass under pressure through the channel and cooling to leave a semi-conductor wall to the channel.
Abstract translation: 由耐高温电绝缘陶瓷材料制成的支撑体和与陶瓷材料的内壁熔合的二次电子发射半导体玻璃材料层的组合形成的电子倍增器装置及其制造方法; 该乘法器装置的特征还在于，陶瓷材料和玻璃材料具有基本上相同的膨胀系数。 该装置是通过将融化的半导体玻璃浇注到具有比玻璃的熔点高的熔点的相同膨胀系数的陶瓷支撑体中的至少一个通道中制造的，使玻璃在压力下通过通道流动并冷却 半导体墙到通道。
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