公开(公告)号：US08153885B2

公开(公告)日：2012-04-10

申请号：US12568370

申请日：2009-09-28

申请人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

发明人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

IPC分类号： H01L25/00 ,  H01L31/00 ,  H02N6/00 ,  H01L31/042 ,  H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material.

公开(公告)号：US08426841B2

公开(公告)日：2013-04-23

申请号：US13128983

申请日：2009-07-23

申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

IPC分类号： H01L29/02

CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。

公开(公告)号：US08168882B2

公开(公告)日：2012-05-01

申请号：US12568360

申请日：2009-09-28

申请人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

发明人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

IPC分类号： H01L25/00 ,  H01L31/00 ,  H01L31/042 ,  H01L21/00 ,  H02N6/00

CPC分类号： H01L31/1804 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material.

摘要翻译： 提供一种集成薄膜太阳能电池及其制造方法。 该方法包括在衬底上形成和图案化彼此相隔预定距离的导电材料; 在所得基板上形成太阳能电池（半导体）层; 将第一透明导电材料倾斜地沉积在太阳能电池层上; 使用第一透明导电材料作为掩模蚀刻太阳能电池层; 并在所得基板上倾斜沉积第二透明导电材料，并将导电材料与第一透明导电材料电连接。

公开(公告)号：US08148626B2

公开(公告)日：2012-04-03

申请号：US11610254

申请日：2006-12-13

申请人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

发明人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

IPC分类号： H01L25/00 ,  H01L31/00 ,  H01L31/042 ,  H01L21/00 ,  H02N6/00

CPC分类号： H01L31/1804 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material.

公开(公告)号：US08449782B2

公开(公告)日：2013-05-28

申请号：US11610366

申请日：2006-12-13

申请人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

发明人： Koeng Su Lim ,  Seong Won Kwon ,  Joong Hwan Kwak ,  Ji Hwan Yang ,  Sang Il Park ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin

IPC分类号： B29D11/00

CPC分类号： B29D11/00 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0468 ,  H01L31/188 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is a method of manufacturing a see-through-type integrated solar cell and a method of manufacturing the same. The method comprises forming a first conductive material being apart and strip patterned on a transparent substrate so that the first conductive material comprises a predetermined space for enabling light to directly pass through the transparent substrate, forming a solar cell (semiconductor) layer, obliquely depositing a second conductive material and etching the solar cell layer using the second conductive material layer as a mask.

摘要翻译： 提供一种制造透明型集成太阳能电池的方法及其制造方法。 该方法包括形成分开的第一导电材料并在透明基板上进行带图案化，使得第一导电材料包括用于使光直接通过透明基板的预定空间，形成太阳能电池（半导体）层，倾斜地沉积 使用第二导电材料层作为掩模蚀刻太阳能电池层。

公开(公告)号：US20120132882A1

公开(公告)日：2012-05-31

申请号：US13128983

申请日：2009-07-23

申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

IPC分类号： H01L47/00

CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。