公开(公告)号：US20160276485A1

公开(公告)日：2016-09-22

申请号：US14984284

申请日：2015-12-30

申请人： Ju-youn KIM ,  Sang-jung KANG ,  Ji-hwan AN

发明人： Ju-youn KIM ,  Sang-jung KANG ,  Ji-hwan AN

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856

摘要： A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.

摘要翻译： 半导体器件包括半导体衬底上的至少一个第一栅极结构和至少一个第二栅极结构。 所述至少一个第一栅极结构具有在第一方向上延伸的平坦的上表面和在垂直于第一方向的第二方向上的第一宽度。 所述至少一个第二栅极结构具有在所述第一方向上延伸的凸上表面和在所述第二方向上延伸的第二宽度，所述第二宽度大于所述第一宽度。

公开(公告)号：US09614090B2

公开(公告)日：2017-04-04

申请号：US14984284

申请日：2015-12-30

申请人： Ju-youn Kim ,  Sang-jung Kang ,  Ji-hwan An

发明人： Ju-youn Kim ,  Sang-jung Kang ,  Ji-hwan An

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856

摘要： A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.

公开(公告)号：US08426841B2

公开(公告)日：2013-04-23

申请号：US13128983

申请日：2009-07-23

申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

IPC分类号： H01L29/02

CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。

公开(公告)号：US20120132882A1

公开(公告)日：2012-05-31

申请号：US13128983

申请日：2009-07-23

申请人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

发明人： Jung Won Seo ,  Keong Su Lim ,  Jae Woo Park ,  Ji Hwan Yang ,  Sang Jung Kang

IPC分类号： H01L47/00

CPC分类号： H01L27/12 ,  G11C13/0007 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1666

摘要： The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

摘要翻译： 本发明涉及透明电子设备的透明存储器。 透明存储器包括：依次形成在透明基板上的下部透明电极层和由至少一个透明电阻变化材料层制成的数据存储区域和上部透明层。 透明电阻变化材料层由于在下部和上部透明电极层之间施加一定电压而引起的电阻变化的结果具有开关特性。 透明电阻变化材料层的光学带隙为3eV以上，可见光的材料层的透射率为80％以上。 本发明提供透明和电阻变化的存储器，其具有非常高的透明度和取决于低开关电压下的电阻变化的开关特性，并且可以在经过长时间后保持其开关特性。