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公开(公告)号：US5629891A
公开(公告)日：1997-05-13
申请号：US622763
申请日：1996-03-25
CPC分类号： G05F3/247 , G05F1/468 , G05F3/24 , G11C11/56 , G11C11/5621 , G11C27/005 , G11C5/147 , G11C16/30 , G11C2211/5634 , G11C7/16
摘要： A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
摘要翻译： 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路，使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面，并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构，用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供比较器来监控浮栅电压和目标电压，并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间，电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间，电流比较器被配置为电流镜来缓冲模拟电流输出。
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公开(公告)号：US5541878A
公开(公告)日：1996-07-30
申请号：US267595
申请日：1994-06-27
CPC分类号： G05F3/247 , G05F1/468 , G05F3/24 , G11C11/56 , G11C11/5621 , G11C27/005 , G11C5/147 , G11C16/30 , G11C2211/5634 , G11C7/16
摘要： A circuit for generating N analog voltage signals for reference or bias use employs N analog floating gate storage devices. Circuitry is provided so that all floating gate storage devices can be programmed to their target voltages individually or in parallel. Electron injection circuitry is provided for injecting electrons on to and a tunneling structure is provided for removing electrons from the floating gate of each floating gate storage device. A transistor structure with a lightly doped drain is provided for control of the tunneling structure. A capacitor is connected to each floating gate node to provide control of the injection structure. A dynamic analog storage element is provided to store the target voltage for the floating gate storage device. A comparator is provided to monitor the floating gate voltage and target voltage and control tunneling and injection. A digital storage device is provided to statically store the output of the comparator. During normal operation of the voltage reference circuit, the voltage comparator is configured as a follower amplifier to buffer the analog voltage output. During normal operation of the bias reference circuit, the current comparator is configured as a current mirror to buffer the analog current output.
摘要翻译： 用于产生用于参考或偏置使用的N个模拟电压信号的电路使用N个模拟浮动栅极存储装置。 提供电路，使得所有浮动栅极存储装置可以单独地或并行地编程到它们的目标电压。 提供电子注入电路用于将电子注入到上面，并且提供隧道结构用于从每个浮动栅极存储装置的浮动栅极去除电子。 提供了具有轻掺杂漏极的晶体管结构，用于控制隧道结构。 电容器连接到每个浮动栅极节点以提供对注入结构的控制。 提供动态模拟存储元件以存储浮动栅极存储装置的目标电压。 提供一个比较器来监控浮动栅极电压和目标电压，并控制隧道和注入。 提供数字存储设备以静态存储比较器的输出。 在电压基准电路正常工作期间，电压比较器被配置为跟随放大器以缓冲模拟电压输出。 在偏置参考电路的正常工作期间，电流比较器被配置为电流镜以缓冲模拟电流输出。
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