METHOD OF POLISHING C4 MOLYBDENUM MASKS TO REMOVE MOLYBDENUM PEAKS
    1.
    发明申请
    METHOD OF POLISHING C4 MOLYBDENUM MASKS TO REMOVE MOLYBDENUM PEAKS 有权
    抛光C4莫氏体掩模去除莫氏体峰的方法

    公开(公告)号:US20050045591A1

    公开(公告)日:2005-03-03

    申请号:US10604991

    申请日:2003-08-29

    IPC分类号: C23F3/06 H01L21/321 C23F1/00

    CPC分类号: H01L21/3212 C23F3/06

    摘要: A method of treating a molybdenum (moly) mask used in a C4 process to pattern C4 contacts. The moly mask has a wafer side which contacts a wafer during the C4 process and has a rough surface that includes spikes/projections of moly. The moly mask also has a non wafer side and a plurality of holes extending through the mask to pattern C4 contacts in the C4 process. An adhesive layer, such as an adhesive tape, is applied to the non wafer side of the moly mask, to enable a polishing tool to pull a vacuum on the non wafer side of the moly mask in spite of the presence of the holes to secure the moly mask during a subsequent polishing step. The tape also functions as a cushion so that defects on the non wafer side of the moly mask do not replicate through the moly mask to the polished wafer side of the moly mask. The wafer side of the moly mask is then subjected to mechanical or chemical/mechanical polishing to substantially remove the spikes of moly without significantly altering the dimensions of the moly mask or the holes.

    摘要翻译: 一种处理C4工艺中使用的钼(钼)掩模的图案化C4接触的方法。 钼掩模具有在C4工艺期间接触晶片的晶片侧,并且具有包括钼的尖峰/突起的粗糙表面。 钼掩模还具​​有非晶片侧和在C4工艺中延伸穿过掩模以形成图案C4触点的多个孔。 粘合剂层例如胶带被施加到钼掩模的非晶片侧,以使得抛光工具能够在钼掩模的非晶片侧上拉真空,尽管存在孔以确保 在随后的抛光步骤期间的钼掩模。 胶带还起垫片的作用,使得钼掩模的非晶片侧的缺陷不会通过钼掩模复制到钼掩模的抛光晶片侧。 然后对钼掩模的晶片侧进行机械或化学/机械抛光,以基本上除去钼的尖峰而不显着改变钼掩模或孔的尺寸。