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公开(公告)号：US07189140B1
公开(公告)日：2007-03-13
申请号：US11270125
申请日：2005-11-08
IPC分类号： B24B49/18
CPC分类号： B24B53/017 , B24B49/105
摘要： Methods and apparatus are provided for calibrating a chemical mechanical polishing (“CMP”) tool having a polishing station with a platen, an eddy current probe disposed within the platen, a polishing pad coupled to the platen, and a metal element disposed within the polishing station and configured to be selectively moved proximate the polishing pad. The method includes the steps of determining a thickness measurement of the polishing pad and adjusting at least one tool parameter based, in part, upon the determined thickness measurement of the polishing pad.
摘要翻译： 提供了用于校准化学机械抛光（“CMP”）工具的方法和装置，所述工具具有带有压板的抛光台，设置在压板内的涡流探针，连接到压板的抛光垫和设置在抛光内的金属元件 并且构造成在抛光垫附近选择性地移动。 该方法包括以下步骤：确定研磨垫的厚度测量并且部分地基于所确定的抛光垫的厚度测量来调整至少一个刀具参数。
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2.发明授权Apparatus and method for calculating a wafer position in a processing chamber under process conditions 有权用于在处理条件下计算处理室中的晶片位置的装置和方法公开(公告)号：US09117866B2
公开(公告)日：2015-08-25
申请号：US13563066
申请日：2012-07-31
申请人： David Marquardt , John Shugrue
发明人： David Marquardt , John Shugrue
CPC分类号： H01L21/681 , F27D3/0084 , G01B11/14 , H01L21/67259
摘要： An apparatus for processing a wafer including a reaction chamber having a reaction space for processing the wafer, a susceptor positioned within the reaction chamber and having a sidewall, at least one light source positioned outside of the reaction space, at least one window in the reaction chamber, and wherein the at least one light source is directed through the at least one window to contact the sidewall.
摘要翻译： 一种用于处理晶片的装置，包括具有用于处理晶片的反应空间的反应室，位于反应室内并具有侧壁的基座，位于反应空间外部的至少一个光源，反应中的至少一个窗口 室，并且其中所述至少一个光源被引导通过所述至少一个窗口以接触所述侧壁。
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3.发明申请APPARATUS AND METHOD FOR CALCULATING A WAFER POSITION IN A PROCESSING CHAMBER UNDER PROCESS CONDITIONS 有权在过程条件下计算处理室中的波形位置的装置和方法公开(公告)号：US20140036274A1
公开(公告)日：2014-02-06
申请号：US13563066
申请日：2012-07-31
申请人： David Marquardt , John Shugrue
发明人： David Marquardt , John Shugrue
CPC分类号： H01L21/681 , F27D3/0084 , G01B11/14 , H01L21/67259
摘要： An apparatus for processing a wafer including a reaction chamber having a reaction space for processing the wafer, a susceptor positioned within the reaction chamber and having a sidewall, at least one light source positioned outside of the reaction space, at least one window in the reaction chamber, and wherein the at least one light source is directed through the at least one window to contact the sidewall.
摘要翻译： 一种用于处理晶片的装置，包括具有用于处理晶片的反应空间的反应室，位于反应室内并具有侧壁的基座，位于反应空间外部的至少一个光源，反应中的至少一个窗口 室，并且其中所述至少一个光源被引导通过所述至少一个窗口以接触所述侧壁。
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