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    TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION
    1.
    发明申请
    TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 有权
    低温离子植入技术

    公开(公告)号：US20110207308A1

    公开(公告)日：2011-08-25

    申请号：US13099203

    申请日：2011-05-02

    申请人： Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan G. ENGLAND ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01L21/265 ,  H01L21/683

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到端部 冷却晶片经历离子注入工艺的工位。

    Technique for low-temperature ion implantation
    2.
    发明授权
    Technique for low-temperature ion implantation 有权
    低温离子注入技术

    公开(公告)号：US08319196B2

    公开(公告)日：2012-11-27

    申请号：US13099203

    申请日：2011-05-02

    申请人： Jonathan G. England ,  Steven R. Walther ,  Richard S. Muka ,  Julian G. Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan G. England ,  Steven R. Walther ,  Richard S. Muka ,  Julian G. Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01J37/00

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 设备可以包括位于离子注入机内的端站附近的预冷站; 所述预冷站内的冷却机构被配置为将晶片从环境温度冷却到小于环境温度的预定范围; 耦合到预冷站和终端站的加载组件; 以及与加载组件和冷却机构通信的控制器，用于将晶片加载到预冷站中，将晶片在任何离子注入晶片之前将晶片冷却至预定温度范围，并将冷却的晶片装载到最后 冷却晶片经历离子注入工艺的工位。

    PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS
    4.
    发明申请
    PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS 审中-公开
    细粒束辅助修饰薄膜材料

    公开(公告)号：US20090124065A1

    公开(公告)日：2009-05-14

    申请号：US12269327

    申请日：2008-11-12

    申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

    发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

    摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

    摘要翻译： 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。