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1.发明授权公开(公告)号：US07378744B2
公开(公告)日：2008-05-27
申请号：US11419542
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
CPC分类号： H01L21/76843 , H01L21/3003 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
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2.发明申请Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance 有权膜层等离子体处理以降低薄膜电阻并提高通孔接触电阻公开(公告)号：US20060216916A1
公开(公告)日：2006-09-28
申请号：US11419537
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译： 一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。 然后将凝集层暴露于等离子体处理。 在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。
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3.发明授权Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 失效在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻公开(公告)号：US07067409B2
公开(公告)日：2006-06-27
申请号：US10842169
申请日：2004-05-10
申请人： Jian Shin Tsai , Yu Hua Chou , Tzo Hung Luo , Chi Chan Tseng , Wei Zhang , Jong Chen Yang
发明人： Jian Shin Tsai , Yu Hua Chou , Tzo Hung Luo , Chi Chan Tseng , Wei Zhang , Jong Chen Yang
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译： 一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。 然后将凝集层暴露于等离子体处理。 在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。
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4.发明授权Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 有权在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻公开(公告)号：US07358612B2
公开(公告)日：2008-04-15
申请号：US11419537
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译： 一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。 然后将凝集层暴露于等离子体处理。 在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。
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5.发明申请Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance 失效在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻公开(公告)号：US20050250320A1
公开(公告)日：2005-11-10
申请号：US10842169
申请日：2004-05-10
申请人： Jian Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/44 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译： 一种制造半导体器件触点的方法，包括在衬底上形成绝缘层，并在绝缘层上形成凝集层。 然后将凝集层暴露于等离子体处理。 在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。
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6.发明申请Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance 有权膜层等离子体处理以降低薄膜电阻并提高通孔接触电阻公开(公告)号：US20070010080A1
公开(公告)日：2007-01-11
申请号：US11419542
申请日：2006-05-22
申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
发明人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
IPC分类号： H01L21/3205
CPC分类号： H01L21/76843 , H01L21/3003 , H01L21/7685 , H01L21/76856 , H01L21/76862
摘要： A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
摘要翻译： 一种制造半导体器件触点的方法，包括在衬底上形成绝缘层并在绝缘层上形成凝集层。 然后将凝集层暴露于等离子体处理。 在等离子体处理的凝集层上形成阻挡层，并且在阻挡层上形成导电层。
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