Method of filling an opening in an insulating layer
    1.
    发明授权
    Method of filling an opening in an insulating layer 失效
    在绝缘层中填充开口的方法

    公开(公告)号:US06245653B1

    公开(公告)日:2001-06-12

    申请号:US09275922

    申请日:1999-03-24

    IPC分类号: H01L2144

    摘要: The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhanced wetting and simultaneous seed layer formation. The idea is, in contrast to trying to avoid the TiAl3 formation, to use this reaction to its advantage for the creation of an ultra-thin continuous Al-containing seed layer. The latter allows a bottom to top fill during the subsequent Al-containing metal deposition. As a consequence, the filling process proceeds much faster and is production worthy.

    摘要翻译: 本发明涉及一种用于以快速且高可靠的方式填充绝缘层中的开口的方法,并且可以同时填充诸如沟槽和通孔的开口。 该方法是基于反应增强润湿和同时种子层形成的原理。 这个想法是与试图避免TiAl3形成相反,将该反应用于产生超薄连续含Al种子层的优点。 后者允许在随后的含Al金属沉积期间从底部到顶部填充。 因此,填充过程进行得更快,生产价值。