公开(公告)号：US20060234441A1

公开(公告)日：2006-10-19

申请号：US11222966

申请日：2005-09-12

Applicant: Jung Wu Chien ,  Tsai Nieh ,  Ju Cheng Chen ,  Chao Hsi Chung

Inventor： Jung Wu Chien ,  Tsai Nieh ,  Ju Cheng Chen ,  Chao Hsi Chung

IPC: H01L21/465 ,  H01L21/8242

CPC classification number: H01L21/0273 ,  B82Y10/00 ,  H01L21/31116 ,  H01L21/31625 ,  H01L27/10861 ,  H01L28/84 ,  H01L29/66181

Abstract: A method for preparing a deep trench first forms a trench in a semiconductor substrate and a stacked structure in the trench, wherein the stacked structure includes at least one nitrogen-containing layer. A phosphorous oxide layer is then formed on the surface of the nitrogen-containing layer. The phosphorous oxide is then transformed into an etchant in a steam atmosphere to remove the nitrogen-containing layer in the trench. The phosphorous oxide layer in the trench is then removed, and the nitrogen-containing layer can be effectively removed. The method further comprises forming a plurality of crystallites on a portion of the nitrogen-containing layer before the phosphorous oxide layer is formed on the surface of the nitrogen-containing layer, which allows the formation of a deep trench with a rough inner sidewall.

Abstract translation: 用于制备深沟槽的方法首先在半导体衬底中形成沟槽，并在沟槽中形成堆叠结构，其中堆叠结构包括至少一个含氮层。 然后在含氮层的表面上形成磷氧化物层。 然后将氧化磷在蒸汽气氛中转化成蚀刻剂以除去沟槽中的含氮层。 然后去除沟槽中的磷氧化物层，并且可以有效地去除含氮层。 该方法还包括在含氮层的表面上形成含氮层的一部分之前形成多个微晶，这允许形成具有粗糙内侧壁的深沟槽。