公开(公告)号：US5167158A

公开(公告)日：1992-12-01

申请号：US474759

申请日：1990-03-26

申请人： Makoto Kamachi ,  Jun Tajika ,  Aki Tabata ,  Noritake Suzuki ,  Hiroshi Inagaki

发明人： Makoto Kamachi ,  Jun Tajika ,  Aki Tabata ,  Noritake Suzuki ,  Hiroshi Inagaki

IPC分类号： G01L9/00

CPC分类号： G01L9/0055

摘要： This invention provides a semiconductor film pressure sensor in which the pressure-sensitive resistance layers are made of an n-type polycrystalline silicon layer, and a method of manufacturing the sensor. In the semiconductor film pressure sensor of the invention, the pressure-sensitive resistance layers are formed on a diaphragm, and in addition a coarsely adjusting pattern and a finely adjusting pattern for zero point adjustment and the resistors of a temperature compensating circuit are formed on the diaphragm using the same n-type polycrystalline silicone layer. In formation of the n-type polycrystalline silicone layer, the substrate temperature is held at 500.degree. to 600.degree. C. The coarsely adjusting pattern and finely adjusting pattern for zero point adjustment, and the resistors of the temperature compensating circuit are formed in the same step as the pressure-sensitive resistance layers.

公开(公告)号：US4746372A

公开(公告)日：1988-05-24

申请号：US853322

申请日：1986-04-18

申请人： Jun Tajika ,  Seijiro Sano ,  Tsuneo Miyake ,  Osamu Kuboi

发明人： Jun Tajika ,  Seijiro Sano ,  Tsuneo Miyake ,  Osamu Kuboi

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： An amorphous silicon solar cell comprising a glass substrate, a transparent conductive film formed on the glass substrate on one side thereof and having micro-columns or fine crystals irregularly formed on the other side, a plurality of amorphous silicon layers superposed on said other side of the conductive film, and a metal electrode formed on the superposed silicon layer. At the interface between the transparent conductive film and the amorphous silicon layer is formed an intermediate layer in which both materials of the conductive film and the silicon layer are mixed. The intermediate layer has a refractive index between the conductive film and the silicon layer. The glass substrate may be substituted with a metal substrate, in which case the plurality of silicon layers are formed directly on the metal substrate, on which the transparent conductive film having an irregular surface on the side opposite to the side where the silicon layers are formed and a metal electrode are formed in this order.

摘要翻译： 一种非晶硅太阳能电池，包括玻璃基板，在其一侧上形成在玻璃基板上的透明导电膜，并且具有在另一侧上不规则形成的微细柱或微细晶体，多个非晶硅层叠加在另一侧上 导电膜和形成在叠置的硅层上的金属电极。 在透明导电膜和非晶硅层之间的界面处形成中间层，其中导电膜和硅层的材料都混合在一起。 中间层在导电膜和硅层之间具有折射率。 玻璃基板可以被金属基板取代，在这种情况下，多个硅层直接形成在金属基板上，在其上形成有与形成硅层的一侧相反一侧的不规则表面的透明导电膜 并且依次形成金属电极。

公开(公告)号：US5191798A

公开(公告)日：1993-03-09

申请号：US490565

申请日：1991-06-10

申请人： Aki Tabata ,  Jun Tajika ,  Hiroshi Inagaki ,  Yukio Kobayashi ,  Noritake Suzuki

发明人： Aki Tabata ,  Jun Tajika ,  Hiroshi Inagaki ,  Yukio Kobayashi ,  Noritake Suzuki

IPC分类号： G01L9/00 ,  H01L29/84

CPC分类号： H01L29/84 ,  G01L9/0055

摘要： A pressure sensor including a semiconductor strain gauge and resistors for compensating temperature, a zero point or the like and made of the same material as that of said semiconductor strain gauge are formed on a metal diaphragm thereof. The resistors for the compensating circuit and the strain gauge are simultaneously formed by patterning a polycrystalline silicone thin film or the like laminated on the diaphragm. As a result, the number of the elements and the manufacturing processes such as a soldering process are reduced for the purpose of improving manufacturing yield. In order to widen the zero point compensating range, a plurality of zero-point compensating resistors, if formed, are disposed on a circumference relative to the center of the diaphragm so as to reduced the scattering in the level of the resistance of each of the resistors. On the other hand, a stepped portion is formed between the holding surface of the diaphragm and the pressure receiving surface of the same so that the pressure receiving portion does not receive a bad influence even if the holding position on the holding surface is deviated due to the pressure applied to the diaphragm. As a result, the linearity of the output characteristics can be improved.

公开(公告)号：US06777820B2

公开(公告)日：2004-08-17

申请号：US09492761

申请日：2000-01-27

申请人： Teiichirou Chiba ,  Etsurou Satou ,  Jun Tajika

发明人： Teiichirou Chiba ,  Etsurou Satou ,  Jun Tajika

IPC分类号： H01L23544

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10T428/21 ,  Y10T428/219 ,  H01L2924/00

摘要： To provide a semiconductor wafer having dot marks produced by irradiating laser beam capable of selecting a marking region capable of reading and writing marks in a state in which the marks hardly vanish and the semiconductor wafer is contained in a wafer cassette, inscribing information of an identification number or electric properties in the region and grasping past history by a unit of the wafer in processing steps or semiconductor fabrication steps thereafter, a very small dot mark is formed by irradiating laser having a diameter of 1 through 13 &mgr;m on an inner wall face of a notch (1) formed on an outer peripheral face of a semiconductor wafer (W), particularly on an inclined face of its peripheral edge.

摘要翻译： 为了提供一种半导体晶片，其具有通过照射激光束而产生的点标记，所述激光束能够选择在标记几乎不消失的状态下能够读取和写入标记的标记区域，并且半导体晶片被包含在晶片盒中，将识别信息 数量或电气特性，然后在处理步骤或半导体制造步骤中通过晶片的单位掌握过去的历史，通过将具有1至13μm直径的激光照射在具有1至13μm的直径的激光上而形成非常小的点标记 形成在半导体晶片（W）的外周面上的切口（1），特别是在其周缘的倾斜面上。