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    Vacuum system of semiconductor device manufacturing equipment
    1.
    发明申请
    Vacuum system of semiconductor device manufacturing equipment 审中-公开
    半导体器件制造设备的真空系统

    公开(公告)号：US20070193573A1

    公开(公告)日：2007-08-23

    申请号：US11542108

    申请日：2006-10-04

    申请人： Kyung-Tae Kim ,  Chul-Hwan Choi ,  Kyung-Tae Kim ,  Jun-Woo Choi

    发明人： Kyung-Tae Kim ,  Chul-Hwan Choi ,  Kyung-Tae Kim ,  Jun-Woo Choi

    IPC分类号： F24J1/00 ,  F24J3/00

    CPC分类号： C23C16/4412 ,  C23C14/564 ,  F16K1/22 ,  H01L21/67017

    摘要： Semiconductor device manufacturing equipment has a vacuum system that enhances the fluency of the gas being discharged from a chamber of the equipment. The vacuum system has a vent line, and a throttle valve that includes a vent line opening and closing member oriented so that it is readily opened by a concentrated flow of gas in the vent line. The vacuum system may include a heating unit that heats the vent line through which the gas passes. Still further, a bend in the vent line upstream of the vent line opening and closing member may have a gently curved shape and/or may subtend an angle of less than 90°. As a result, the efficiency of the ventilation of the process chamber is improved, making it easier to control the pressure of the process chamber and minimizing the contamination of the throttle valve and the vent line.

    摘要翻译： 半导体器件制造设备具有提高从设备的室排出的气体的流畅性的真空系统。 真空系统具有排气管线和节流阀，该节流阀包括排气管路开闭部件，其定向成容易通过排气管线中的浓缩的气流打开。 真空系统可以包括加热单元，加热气体通过的排放管线。 此外，通气线打开和关闭部件上游的通气线的弯曲部可以具有轻微弯曲的形状和/或可以对着小于90°的角度。 结果，提高了处理室的通风效率，使得更容易控制处理室的压力并最小化节流阀和排气管线的污染。

    Complementary spin transistor logic circuit
    2.
    发明授权
    Complementary spin transistor logic circuit 有权
    互补自旋晶体管逻辑电路

    公开(公告)号：US08125247B2

    公开(公告)日：2012-02-28

    申请号：US12899778

    申请日：2010-10-07

    申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    IPC分类号： H03K19/091 ,  H01L21/02

    CPC分类号： H03K19/091 ,  B82Y10/00 ,  G11C11/16 ,  H03K19/18

    摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.

    摘要翻译： 提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极 电极连接到公共输入端子。

    Method of installing semiconductor device manufacturing equipment and mock-up for use in the method
    3.
    发明申请
    Method of installing semiconductor device manufacturing equipment and mock-up for use in the method 审中-公开
    安装半导体器件制造设备的方法和用于该方法的模型

    公开(公告)号：US20070072489A1

    公开(公告)日：2007-03-29

    申请号：US11402822

    申请日：2006-04-13

    申请人： Kyung-Tae Kim ,  Jun-Woo Choi ,  Chul-Hwan Choi

    发明人： Kyung-Tae Kim ,  Jun-Woo Choi ,  Chul-Hwan Choi

    IPC分类号： H01R13/66

    CPC分类号： H01R13/005 ,  H01L21/6719 ,  H01R4/56 ,  H01R4/66

    摘要： Semiconductor device manufacturing equipment is installed using a mock-up of the equipment. First, a full-scale layout drawing of the equipment is prepared. Also, a mock-up of the equipment is fabricated. The mock-up has wiring and pipe connectors of the same type as those of the main equipment. The layout drawing is placed on the floor of the site at which the main equipment is to be installed. Then the mock-up is placed at the same location where the main equipment is to be installed, as represented in the layout drawing, with the wiring and pipe connectors of the mock-up located at the same positions where the wiring and pipe connectors of the main equipment will be located. The wiring and piping of the semiconductor manufacturing equipment is installed, and ends of the wiring and piping are connected to the wiring and pipe connectors of the mock-up. Then the wiring and piping are inspected. Subsequently, the mock-up is disassembled and removed, and the main equipment is set in place at the same location from which the mock-up was removed. Finally, the wiring and piping are connected with the wiring and pipe connectors of the main equipment. Thus, the semiconductor device manufacturing equipment can be quickly placed in operation once the main, apparatus of the equipment is procured.

    摘要翻译： 使用设备的模型安装半导体器件制造设备。 首先，准备了设备的全尺寸布局图。 此外，制造了设备的模型。 该模型具有与主设备相同类型的接线和管接头。 布置图放在主要设备安装地点的地板上。 然后将模型放置在主要设备安装的相同位置，如布置图所示，模型的布线和管道连接器位于相同位置，其中布线和管道连接器 主要设备将位于。 安装半导体制造设备的布线和管道，将布线和管道的末端连接到模型的布线和管道连接器。 然后检查接线和管道。 随后，将模型拆卸拆卸，并将主设备放置在拆除模型的同一位置。 最后，配线和管道与主设备的接线和管接头连接。 因此，一旦采购了设备的主要设备，半导体器件制造设备就可以快速地投入运行。

    COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT
    4.
    发明申请
    COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT 有权
    补充旋转晶体管逻辑电路

    公开(公告)号：US20110279146A1

    公开(公告)日：2011-11-17

    申请号：US12899778

    申请日：2010-10-07

    申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Jun Woo Choi

    IPC分类号： H03K19/091

    CPC分类号： H03K19/091 ,  B82Y10/00 ,  G11C11/16 ,  H03K19/18

    摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.

    摘要翻译： 提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极 电极连接到公共输入端子。

    METHOD FOR SIMULATING FLUID FLOW AND RECORDING MEDIUM FOR PERFORMING THE METHOD
    6.
    发明申请
    METHOD FOR SIMULATING FLUID FLOW AND RECORDING MEDIUM FOR PERFORMING THE METHOD 有权
    用于模拟流体流动和记录介质的方法

    公开(公告)号：US20120296615A1

    公开(公告)日：2012-11-22

    申请号：US13162406

    申请日：2011-06-16

    申请人： Jae Wan SHIM ,  Hyun Cheol KOO ,  Suk Hee HAN ,  Byoung Chul MIN ,  Jun Woo CHOI ,  Kyung Ho SHIN ,  Jin Dong SONG

    发明人： Jae Wan SHIM ,  Hyun Cheol KOO ,  Suk Hee HAN ,  Byoung Chul MIN ,  Jun Woo CHOI ,  Kyung Ho SHIN ,  Jin Dong SONG

    IPC分类号： G06G7/57

    CPC分类号： G06F17/5018 ,  G06F17/5009 ,  G06F2217/16 ,  G06T13/20 ,  G06T13/80

    摘要： A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.

    摘要翻译： 用于模拟流体流动的方法包括：离散流体流入正常格子的空间; 假设流体颗粒在格子中重复地移动和碰撞; 通过比较Maxwell-Boltzmann分布与离散Maxwell-Boltzmann分布之间的速度的第n（n是非负整数）阶次动量，得出单变量多项式方程; 基于单变量多项式方程计算与流体颗粒的离散速度对应的权重系数; 并使用权重系数导出格子波尔兹曼模型。 可以很容易地得出具有优异的稳定性和精度的晶格玻尔兹曼模型。