公开(公告)号：US20110053381A1

公开(公告)日：2011-03-03

申请号：US12866145

申请日：2010-08-04

申请人： Takashi KOBAYASHI ,  Daisuke KATAYAMA ,  Yoshihiro SATO ,  Junji HORII ,  Yoshihiro HIROTA

发明人： Takashi KOBAYASHI ,  Daisuke KATAYAMA ,  Yoshihiro SATO ,  Junji HORII ,  Yoshihiro HIROTA

IPC分类号： H01L21/465

CPC分类号： H01L21/3105 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/67167 ,  H01L21/76232 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/66795

摘要： Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O2+ ions and O(1D2) radicals is generated in a pressure condition within a range of 6.7 Pa to 267 Pa to modify the insulating film with the plasma.

摘要翻译： 公开了一种使用等离子体处理装置等离子体修饰绝缘膜的方法，其通过具有多个孔的平面天线将微波引入处理室。 含有惰性气体和氧气的处理气体被引入处理室，微波通过平面天线被引入处理室。 在6.7Pa至267Pa的压力条件下产生主要由O 2 +离子和O（1D 2）基团组成的等离子体，以等离子体改性绝缘膜。

公开(公告)号：US06514335B1

公开(公告)日：2003-02-04

申请号：US09486300

申请日：2000-02-24

申请人： Kazuyuki Egashira ,  Masahiko Okui ,  Manabu Nishimoto ,  Tadami Tanaka ,  Shunji Kuragaki ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii ,  Makoto Ito

发明人： Kazuyuki Egashira ,  Masahiko Okui ,  Manabu Nishimoto ,  Tadami Tanaka ,  Shunji Kuragaki ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii ,  Makoto Ito

IPC分类号： C30B1514

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.

摘要翻译： 通过控制在晶面中发生环状氧诱导堆垛层错（R-OSF）的位置，并且使生长期最长的方法，通过控制产生高直径和长尺寸的高质量硅单晶的方法， 在引入步骤中引入的诸如位错簇和红外散射体的缺陷中。 由上述高质量硅单晶制造的晶片几乎没有损坏器件特性的有害缺陷，并且可以有效地适应于器件的大规模集成和尺寸减小。 因此，该方法可广泛用于制造半导体硅单晶领域。

公开(公告)号：US06338757B1

公开(公告)日：2002-01-15

申请号：US09582918

申请日：2000-07-07

申请人： Manabu Nishimoto ,  Masahiko Okui ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii

发明人： Manabu Nishimoto ,  Masahiko Okui ,  Takayuki Kubo ,  Shingo Kizaki ,  Junji Horii

IPC分类号： C30B3500

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention was achieved in order to provide an apparatus for pulling a single crystal with which a single crystal having a low density of grown-in defects called infrared scatterers, dislocation clusters or the like can be grown. In the apparatus for pulling a single crystal having a crucible to be charged with a melt, a heater arranged around the crucible, a straightening vane in the shape of a side surface of an inverted truncated cone or a cylinder surrounding a pulled single crystal and a heat shield plate for inhibiting the radiant heat from diverging upward in the chamber from the side surface of the pulled single crystal located in the vicinity of the melt surface are arranged.

摘要翻译： 实现本发明是为了提供一种用于拉出单晶的装置，通过该装置可以生长出具有低密度的成长缺陷的称为红外散射体，位错簇等的单晶。 在用于拉取具有熔融物的坩埚的单晶体的装置中，设置在坩埚周围的加热器，具有倒立的圆锥体的侧面形状的矫直叶片或围绕拉出的单晶的圆柱体 布置了用于抑制从位于熔融表面附近的被拉取的单晶的侧表面向室内发散的辐射热的隔热板。