Abstract:
A novel semiconductor device having an oxide semiconductor layer between an amorphous silicon hydride and a metallic layer has been found to have an excellent collection efficiency for light, particularly, in the range of short wavelengths and a high energy conversion efficiency as compared with the conventional Schottky barrier semiconductor device and the semiconductor device having a MIS structure. Further, it has been found that the present novel semiconductor device has an excellent storage stability for a long period of time.
Abstract:
A magnetic field sensing device is provided. The magnetic field sensing device includes a magnetoresistance sensor, a Hall sensor, and a calculating circuit. The magnetoresistance sensor senses a magnetic field to provide a magnetoresistance sensing value. The Hall sensor senses the magnetic field to provide a Hall sensing value. The calculating circuit provides a weight value according to the magnetoresistance sensing value, generates a first calculating value according to the weight value and the Hall sensing value, and generates a second calculating value according to the weight value and the magnetoresistance sensing value. The calculating circuit calculates on the first calculating value, the second calculating value, and the magnetoresistance sensing value to generate an output signal with an output value. The output value is associated with a strength of the magnetic field.
Abstract:
A magnetic field sensing device is provided. The magnetic field sensing device includes a magnetoresistance sensor, a Hall sensor, and a calculating circuit. The magnetoresistance sensor senses a magnetic field to provide a magnetoresistance sensing value. The Hall sensor senses the magnetic field to provide a Hall sensing value. The calculating circuit provides a weight value according to the magnetoresistance sensing value, generates a first calculating value according to the weight value and the Hall sensing value, and generates a second calculating value according to the weight value and the magnetoresistance sensing value. The calculating circuit calculates on the first calculating value, the second calculating value, and the magnetoresistance sensing value to generate an output signal with an output value. The output value is associated with a strength of the magnetic field.
Abstract:
Disclosed is a non-woven fabric defect detecting device in which light is applied to a travelling non-woven fabric to optically or electrically scan the non-woven fabric in its widthwise direction and the light from each point on the non-woven fabric is converted into an electric signal. The converted electric signal is classified into a plurality of levels to detect at least a hole and a heavy filling bar. The durations of these detected outputs are counted in the form of clocks and grading of the quality of the non-woven value is achieved based on the count values. The abovesaid converted output is differentiated and the differentiated output above a predetermined level is detected as fold bar.
Abstract:
A reference current generating circuit including a reference voltage generating circuit and a current source circuit is provided. The reference voltage generating circuit generates a first reference voltage according to a first current. The reference voltage generating circuit includes a native transistor device, and the first current flows through the native transistor device. The current source circuit is coupled to the reference voltage generating circuit. The current source circuit generates a reference current according to the first reference voltage. The current source circuit includes a cascode transistor circuit, and the reference current flows through the cascode transistor circuit. The cascode transistor circuit includes a low-voltage transistor device and a high-voltage transistor device coupled in series.
Abstract:
An analog arithmetic circuit for executing multiplications, divisions, compressions, expansions and combinations thereof. The arithmetic circuit is provided with a .DELTA..SIGMA. modulator comprising an A/D converter and a first D/A converter, a second D/A converter for receiving the output from the .DELTA..SIGMA. modulator, and a low-pass filter which receives the output of the second D/A converter and outputs the result of an arithmetic operation. The arithmetic circuit can be fabricated in the form of a MOS LSI because it does not use a precise triangle waveform generator for pulse width modulation.