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    Backside illumination image sensor and electronic system including the backside illumination image sensor
    3.
    发明授权
    Backside illumination image sensor and electronic system including the backside illumination image sensor 有权
    背面照明图像传感器和包括背面照明图像传感器的电子系统

    公开(公告)号：US08836068B2

    公开(公告)日：2014-09-16

    申请号：US13106369

    申请日：2011-05-12

    申请人： Doo-Won Kwon

    发明人： Doo-Won Kwon

    IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/062

    CPC分类号： H01L27/1464 ,  H01L27/1463 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14672 ,  H01L27/14674 ,  H01L31/062 ,  H01L31/103

    摘要： A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.

    摘要翻译： 背面照明图像传感器，其制造方法以及包括背面照明图像传感器的电子系统，所述背面照明图像传感器包括半导体衬底，所述半导体衬底具有上表面和下表面; 半导体衬底中的光电二极管; 和金属互连，其中每个光电二极管包括N型区域，N型区域下方的P型区域和N型区域上的P型区域。

    LOW VOLTAGE NANOSCALE VACUUM ELECTRONIC DEVICES
    5.
    发明申请
    LOW VOLTAGE NANOSCALE VACUUM ELECTRONIC DEVICES 有权
    低电压纳米真空电子设备

    公开(公告)号：US20130299773A1

    公开(公告)日：2013-11-14

    申请号：US13888493

    申请日：2013-05-07

    申请人： UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

    发明人： HONG KOO KIM ,  SIWAPON SRISONPHAN

    IPC分类号： H01L29/76 ,  H01L29/66

    CPC分类号： H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

    摘要： An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

    摘要翻译： 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

    Photovoltaic Devices Using Semiconducting Nanotube Layers
    6.
    发明申请
    Photovoltaic Devices Using Semiconducting Nanotube Layers 审中-公开
    使用半导体纳米管层的光伏器件

    公开(公告)号：US20130133718A1

    公开(公告)日：2013-05-30

    申请号：US13746976

    申请日：2013-01-22

    申请人： Nantero, Inc.

    发明人： Rahul SEN ,  Suchit SHAH ,  Hao-Yu LIN ,  Thomas RUECKES

    IPC分类号： H01L31/042 ,  H01L31/0224

    CPC分类号： H01L31/022466 ,  B82Y10/00 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/03921 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L51/0048 ,  H01L51/424 ,  Y02E10/549

    摘要： Photovoltaic (PV) devices employing layers of semiconducting carbon nanotubes as light absorption elements are disclosed. In one aspect a layer of p-type carbon nanotubes and a layer of n-type carbon nanotubes are used to form a p-n junction PV device. In another aspect a mixed layer of p-type and n-type carbon nanotubes are used to form a bulk hetero-junction PV device. In another aspect a metal such as a low work function metal electrode is formed adjacent to a layer of semiconducting nanotubes to form a Schottky barrier PV device. In another aspect various material deposition techniques well suited to working with nanotube layers are employed to realize a practical metal-insulator-semiconductor (MIS) PV device. In another aspect layers of metallic nanotubes are used to provide flexible electrode elements for PV devices. In another aspect layers of metallic nanotubes are used to provide transparent electrode elements for PV devices.

    摘要翻译： 公开了采用半导体碳纳米管层作为光吸收元件的光伏（PV）装置。 在一个方面，使用p型碳纳米管层和n型碳纳米管层来形成p-n结PV器件。 在另一方面，使用p型和n型碳纳米管的混合层来形成本体异质结PV器件。 在另一方面，诸如低功函数金属电极的金属形成为与半导体纳米管层相邻以形成肖特基势垒PV器件。 在另一方面，采用了非常适合于纳米管层工作的各种材料沉积技术来实现实用的金属 - 绝缘体 - 半导体（MIS）PV器件。 另一方面，金属纳米管层用于为PV器件提供柔性电极元件。 另一方面，金属纳米管层用于为PV器件提供透明电极元件。

    Nanowire field effect junction diode
    7.
    发明授权
    Nanowire field effect junction diode 有权
    纳米线场效应结二极管

    公开(公告)号：US07989800B2

    公开(公告)日：2011-08-02

    申请号：US12578676

    申请日：2009-10-14

    申请人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    发明人： Qiliang Li ,  Dimitris E. Ioannou ,  Yang Yang ,  Xiaoxiao Zhu

    IPC分类号： H01L31/09

    CPC分类号： H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H03K17/74 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/938

    摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

    摘要翻译： 构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。 纳米线设置在绝缘透明基板上。 阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。 氧化物层覆盖纳米线。 第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。 第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。 通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。 通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

    Optoelectronic devices and solar cells
    8.
    发明授权
    Optoelectronic devices and solar cells 失效
    光电器件和太阳能电池

    公开(公告)号：US07723166B2

    公开(公告)日：2010-05-25

    申请号：US11787541

    申请日：2007-04-16

    申请人： Arup Bhattacharyya

    发明人： Arup Bhattacharyya

    IPC分类号： H01L21/00 ,  H01L21/336

    CPC分类号： H01L31/022425 ,  H01L31/0264 ,  H01L31/062 ,  H01L31/0725 ,  H01L31/1085 ,  Y02E10/50

    摘要： The invention includes optoelectronic devices containing one or more layers of semiconductor-enriched insulator (with exemplary semiconductor-enriched insulator being silicon-enriched silicon oxide and silicon-enriched silicon nitride), and includes solar cells containing one or more layers of semiconductor-enriched insulator. The invention also includes methods of forming optoelectronic devices and solar cells.

    摘要翻译： 本发明包括含有一层或多层半导体富集绝缘体（富含富硅的绝缘体为富硅氧化硅和富含硅的氮化硅）的光电器件，并且包括含有一层或多层半导体富集绝缘体的太阳能电池 。 本发明还包括形成光电器件和太阳能电池的方法。

    Methods of making optoelectronic devices, and methods of making solar cells
    9.
    发明授权
    Methods of making optoelectronic devices, and methods of making solar cells 失效
    制造光电子器件的方法和制造太阳能电池的方法

    公开(公告)号：US07687402B2

    公开(公告)日：2010-03-30

    申请号：US10989648

    申请日：2004-11-15

    申请人： Arup Bhattacharyya

    发明人： Arup Bhattacharyya

    IPC分类号： H01L29/22 ,  H01L21/311

    CPC分类号： H01L31/022425 ,  H01L31/0264 ,  H01L31/062 ,  H01L31/0725 ,  H01L31/1085 ,  Y02E10/50

    摘要： The invention includes optoelectronic devices containing one or more layers of semiconductor-enriched insulator (with exemplary semiconductor-enriched insulator being silicon-enriched silicon oxide and silicon-enriched silicon nitride), and includes solar cells containing one or more layers of semiconductor-enriched insulator. The invention also includes methods of forming optoelectronic devices and solar cells.

    摘要翻译： 本发明包括含有一层或多层半导体富集绝缘体（富含富硅的绝缘体为富硅氧化硅和富含硅的氮化硅）的光电器件，并且包括含有一层或多层半导体富集绝缘体的太阳能电池 。 本发明还包括形成光电器件和太阳能电池的方法。

    NITRIDED BARRIER LAYERS FOR SOLAR CELLS
    10.
    发明申请
    NITRIDED BARRIER LAYERS FOR SOLAR CELLS 审中-公开
    用于太阳能电池的氮化阻挡层

    公开(公告)号：US20090288704A1

    公开(公告)日：2009-11-26

    申请号：US12421563

    申请日：2009-04-09

    申请人： Peter G. BORDEN

    发明人： Peter G. BORDEN

    IPC分类号： H01L31/0368 ,  H01L31/18

    CPC分类号： H01L31/062 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention relates to polysilicon emitter solar cells, and more particularly to polysilicon emitter solar cells with hyperabrupt junctions, and methods for making such solar cells. According to one aspect, a polysilicon emitter solar cell according to the invention includes a nitrided tunnel insulator. The nitridation prevents boron diffusion, enabling a hyperabrupt junction for a p-poly on n-Si device. According to another aspect, a nitrided oxide (DPN) is used in a tunnel oxide layer of a MIS solar cell structure. The DPN layer minimizes plasma damage, resulting in improved interface properties. An overlying polysilicon emitter can then provide a low sheet resistance emitter without heavy doping effects in the substrate, excess recombination, or absorption, and is a significant improvement over a conventional diffused emitter or TCO. According to another aspect, the invention includes a method for making a solar cell structure that is functionally equivalent to a selective emitter, but without the requirement for multiple diffusions, long diffusions, aligned lithography, or fine contact holes.

    摘要翻译： 本发明涉及多晶硅发射极太阳能电池，更具体地说涉及具有过度连接的多晶硅发射极太阳能电池，以及制造这种太阳能电池的方法。 根据一个方面，根据本发明的多晶硅发射极太阳能电池包括氮化隧道绝缘体。 氮化防止硼扩散，使得能够在n-Si器件上进行p-poly的过度连接。 根据另一方面，在MIS太阳能电池结构的隧道氧化物层中使用氮化氧化物（DPN）。 DPN层最小化等离子体损伤，从而改善界面性能。 然后，叠加的多晶硅发射极可以提供低的薄层电阻发射极，而不会在衬底中产生重掺杂效应，过量的复合或吸收，并且比传统的扩散发射极或TCO具有显着的改进。 根据另一方面，本发明包括一种用于制造在功能上等同于选择性发射器但不需要多次扩散，长扩散，对准光刻或精细接触孔的太阳能电池结构的方法。