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1.发明授权公开(公告)号：US08685836B2
公开(公告)日：2014-04-01
申请号：US13306455
申请日：2011-11-29
Applicant: Taeyoon Lee , Ja Hoon Koo , Sang Wook Lee , Ka Young Lee
Inventor： Taeyoon Lee , Ja Hoon Koo , Sang Wook Lee , Ka Young Lee
IPC: H01L21/306
CPC classification number: H01L21/31111 , H01L21/31116 , H01L21/76256
Abstract: A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.
Abstract translation: 根据本发明构思的形成硅层的方法包括：制备SOI衬底; 将蚀刻剂的蚀刻剂或蒸气施加到SOI衬底; 并向SOI衬底照射光。
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公开(公告)号：US08523996B2
公开(公告)日：2013-09-03
申请号：US12739657
申请日：2008-02-14
Applicant: Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
Inventor： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
CPC classification number: C23C6/00 , C23C18/08 , C23C18/1216 , C23C18/1254 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02628
Abstract: A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
Abstract translation: 提供一种制造用于氧化物薄膜的液体的方法，其包括将选自锌化合物，铟化合物，镓化合物，锡化合物和铊化合物的至少两种分散体与 对应于所选择的分散体的分散介质以形成分散体系，并在预定温度下将分散体系搅拌并老化预定时间，其中锌化合物与铟化合物，镓化合物，锡化合物和 铊化合物为1:0.1至1:2。 根据本发明，用于氧化物薄膜的液体可以通过溶胶 - 凝胶法制造，使其能够以简单且低成本的方式与常规真空沉积方法相反地进行批量生产。
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公开(公告)号：US20100251936A1
公开(公告)日：2010-10-07
申请号：US12739657
申请日：2008-02-14
Applicant: Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
Inventor： Hyun Jae Kim , Kyung Ho Kim , Gun Hee Kim , Tae Hoon Jeong , Hyun Soo Shin , Won Jun Park , Yun Jung Choi , Ka Young Lee
IPC: C09D1/00
CPC classification number: C23C6/00 , C23C18/08 , C23C18/1216 , C23C18/1254 , C23C30/00 , H01L21/02554 , H01L21/02565 , H01L21/02628
Abstract: A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
Abstract translation: 提供一种制造用于氧化物薄膜的液体的方法，其包括将选自锌化合物，铟化合物，镓化合物，锡化合物和铊化合物的至少两种分散体与 对应于所选择的分散体的分散介质以形成分散体系，并在预定温度下将分散体系搅拌并老化预定时间，其中锌化合物与铟化合物，镓化合物，锡化合物和 铊化合物为1:0.1至1:2。 根据本发明，用于氧化物薄膜的液体可以通过溶胶 - 凝胶法制造，使其能够以简单且低成本的方式与常规真空沉积方法相反地进行批量生产。
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4.发明申请公开(公告)号：US20120231607A1
公开(公告)日：2012-09-13
申请号：US13306455
申请日：2011-11-29
Applicant: Taeyoon LEE , Ja Hoon KOO , Sang Wook LEE , Ka Young LEE
Inventor： Taeyoon LEE , Ja Hoon KOO , Sang Wook LEE , Ka Young LEE
IPC: H01L21/306
CPC classification number: H01L21/31111 , H01L21/31116 , H01L21/76256
Abstract: A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate.
Abstract translation: 根据本发明构思的形成硅层的方法包括：制备SOI衬底; 将蚀刻剂的蚀刻剂或蒸气施加到SOI衬底; 并向SOI衬底照射光。
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