公开(公告)号：US20110210403A1

公开(公告)日：2011-09-01

申请号：US12713395

申请日：2010-02-26

申请人： Lee-Wee TEO ,  Ming Zhu ,  Chi-Ju Lee ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Harry-Hak-Lay Chuang

发明人： Lee-Wee TEO ,  Ming Zhu ,  Chi-Ju Lee ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Harry-Hak-Lay Chuang

IPC分类号： H01L29/78 ,  H01L21/768

CPC分类号： H01L29/66545 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

摘要： The methods and structures described are used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these neighboring devices. The metal gate under contact plugs that are adjacent to devices and share the (or are connected to) metal gate is defined and lined with a work function layer that has good step coverage to prevent contact metal from extruding into gate stacks of neighboring devices. Only modification to the mask layout for the photomask(s) used for removing dummy polysilicon is involved. No additional lithographical operation or mask is needed. Therefore, no modification to the manufacturing processes or additional substrate processing steps (or operations) is involved or required. The benefits of using the methods and structures described above may include increased device yield and performance.

摘要翻译： 所描述的方法和结构用于防止接触金属（例如W）水平地突出到相邻设备的门堆叠中，以影响这些相邻设备的功能。 定义了与设备相邻并且共享（或连接到）金属栅极的接触插塞下面的金属栅，并且衬有具有良好阶梯覆盖的功函数层，以防止接触金属挤出到相邻器件的栅极堆叠中。 仅涉及用于去除伪多晶硅的光掩模的掩模布局的修改。 不需要额外的光刻操作或掩模。 因此，不涉及制造工艺或附加的基板处理步骤（或操作）的修改。 使用上述方法和结构的好处可以包括提高器件产量和性能。

公开(公告)号：US08329521B2

公开(公告)日：2012-12-11

申请号：US12830107

申请日：2010-07-02

申请人： Harry Hak-Lay Chuang ,  Bao-Ru Young ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Jin-Aun Ng ,  Wei Cheng Wu ,  Ming Zhu

发明人： Harry Hak-Lay Chuang ,  Bao-Ru Young ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Jin-Aun Ng ,  Wei Cheng Wu ,  Ming Zhu

IPC分类号： H01L21/8238 ,  H01L27/148

CPC分类号： H01L21/823481 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878 ,  H01L29/66545

摘要： A method includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface spaced from the first surface by less than the step height, forming a gate structure, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface spaced from the first surface by less than the step height, a gate structure, and a contact engaging the gate structure over the recess.

摘要翻译： 一种方法包括提供具有第一表面的基板，形成部分地设置在基板中的隔离结构，并且具有高于第一表面的台阶高度的第二表面，去除隔离结构的一部分以形成其中具有底部 表面与所述第一表面间隔开小于所述台阶高度，形成栅极结构，以及形成在所述凹部上接合所述栅极结构的触点。 不同的方面涉及一种装置，其包括具有第一表面的衬底，部分地设置在衬底中的隔离结构，并且具有比第一表面高的台阶高度的第二表面;从第二表面向下延伸的凹部，凹部具有 与所述第一表面间隔小于所述台阶高度的底表面，栅极结构以及在所述凹部上接合所述栅极结构的触点。

公开(公告)号：US08525270B2

公开(公告)日：2013-09-03

申请号：US12713395

申请日：2010-02-26

申请人： Lee-Wee Teo ,  Ming Zhu ,  Chi-Ju Lee ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Harry-Hak-Lay Chuang

发明人： Lee-Wee Teo ,  Ming Zhu ,  Chi-Ju Lee ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Harry-Hak-Lay Chuang

IPC分类号： H01L21/70

CPC分类号： H01L29/66545 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

摘要： The methods and structures described are used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these neighboring devices. The metal gate under contact plugs that are adjacent to devices and share the (or are connected to) metal gate is defined and lined with a work function layer that has good step coverage to prevent contact metal from extruding into gate stacks of neighboring devices. Only modification to the mask layout for the photomask(s) used for removing dummy polysilicon is involved. No additional lithographical operation or mask is needed. Therefore, no modification to the manufacturing processes or additional substrate processing steps (or operations) is involved or required. The benefits of using the methods and structures described above may include increased device yield and performance.

摘要翻译： 所描述的方法和结构用于防止接触金属（例如W）水平地突出到相邻设备的门堆叠中，以影响这些相邻设备的功能。 定义了与设备相邻并且共享（或连接到）金属栅极的接触插塞下面的金属栅，并且衬有具有良好阶梯覆盖的功函数层，以防止接触金属挤出到相邻器件的栅极堆叠中。 仅涉及用于去除伪多晶硅的光掩模的掩模布局的修改。 不需要额外的光刻操作或掩模。 因此，不涉及制造工艺或附加的基板处理步骤（或操作）的修改。 使用上述方法和结构的好处可以包括提高器件产量和性能。

公开(公告)号：US20120001259A1

公开(公告)日：2012-01-05

申请号：US12830107

申请日：2010-07-02

申请人： Harry Hak-Lay Chuang ,  Bao-Ru Young ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Jin-Aun Ng ,  Wei Cheng Wu ,  Ming Zhu

发明人： Harry Hak-Lay Chuang ,  Bao-Ru Young ,  Sheng-Chen Chung ,  Kai-Shyang You ,  Jin-Aun Ng ,  Wei Cheng Wu ,  Ming Zhu

IPC分类号： H01L29/772 ,  H01L21/28

CPC分类号： H01L21/823481 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823878 ,  H01L29/66545

摘要： A method includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface spaced from the first surface by less than the step height, forming a gate structure, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface spaced from the first surface by less than the step height, a gate structure, and a contact engaging the gate structure over the recess.

摘要翻译： 一种方法包括提供具有第一表面的基板，形成部分地设置在基板中的隔离结构，并且具有高于第一表面的台阶高度的第二表面，去除隔离结构的一部分以形成其中具有底部 表面与所述第一表面间隔开小于所述台阶高度，形成栅极结构，以及形成在所述凹部上接合所述栅极结构的触点。 不同的方面涉及一种装置，其包括具有第一表面的衬底，部分地设置在衬底中的隔离结构，并且具有比第一表面高的台阶高度的第二表面;从第二表面向下延伸的凹部，凹部具有 与所述第一表面间隔小于所述台阶高度的底表面，栅极结构以及在所述凹部上接合所述栅极结构的触点。