公开(公告)号：US07435684B1

公开(公告)日：2008-10-14

申请号：US11493678

申请日：2006-07-26

Applicant: Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Kan Quan Vo

Inventor： Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Kan Quan Vo

IPC: H01L21/311

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/31604

Abstract: This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow width recessed features. The fluorine loading effect in the chamber is minimized and wafers are provided having less deposition thickness variations by employing the method using a hydrogen plasma treatment of the chamber and the substrate after the chamber has been used to grow a dielectric film on a substrate. After the hydrogen plasma treatment of the chamber, the chamber is treated with an etchant gas to etch the substrate. Preferably a hydrogen gas is then introduced into the chamber after the etching process and the process repeated until the fabrication process is complete. The wafer is then removed from the chamber and a new wafer placed in the chamber and the above fabrication process repeated.

Abstract translation: 本发明涉及用于制造诸如半导体晶片的器件的电子器件制造工艺，并且解决了用于形成高纵横比，窄宽度凹陷特征的电介质层的HDP CVD装置的反应室中的氟负载效应。 通过使用在腔室已经用于在衬底上生长电介质膜之后使用腔室和衬底的氢等离子体处理的方法，使腔室中的氟负载效应最小化并提供具有较小沉积厚度变化的晶片。 在室的氢等离子体处理之后，用蚀刻剂气体处理该室以蚀刻该衬底。 优选地，在蚀刻工艺之后，将氢气引入室中，重复该过程，直到制造过程完成。 然后将晶片从腔室中取出，并将新的晶片放置在腔室中，并重复上述制造过程。