公开(公告)号：US20120270383A1

公开(公告)日：2012-10-25

申请号：US13433563

申请日：2012-03-29

申请人： Kanta ABE ,  Hidekazu MIYAIRI ,  Tetsuhiro TANAKA ,  Takashi IENAGA ,  Yoshitaka YAMAMOTO

发明人： Kanta ABE ,  Hidekazu MIYAIRI ,  Tetsuhiro TANAKA ,  Takashi IENAGA ,  Yoshitaka YAMAMOTO

IPC分类号： H01L21/263 ,  H01L21/28 ,  H01L21/20

CPC分类号： H01L29/04 ,  H01L21/28008 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

摘要翻译： 提供一种半导体器件的制造方法，其中通过对含有氮的栅极绝缘膜进行等离子体氧化处理可以抑制薄膜晶体管的特性的劣化。 本发明的一个实施例是一种半导体器件的制造方法，该半导体器件包括薄膜晶体管，该薄膜晶体管包括栅电极，含氮的栅绝缘膜和微晶半导体膜中的沟道区。 该方法包括以下步骤：在包含氢的氧化气体气氛和含有氧原子的氧化气体的栅极绝缘膜上进行等离子体处理，并在栅极绝缘膜上形成微晶半导体膜。 满足式（1），a /b≥2和式（2），b> 0，其中，氢和氧化气体气氛中的氧化气体量分别为a和b。

公开(公告)号：US09401396B2

公开(公告)日：2016-07-26

申请号：US13433563

申请日：2012-03-29

申请人： Kanta Abe ,  Hidekazu Miyairi ,  Tetsuhiro Tanaka ,  Takashi Ienaga ,  Yoshitaka Yamamoto

发明人： Kanta Abe ,  Hidekazu Miyairi ,  Tetsuhiro Tanaka ,  Takashi Ienaga ,  Yoshitaka Yamamoto

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/04 ,  H01L29/66 ,  H01L21/28 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/28008 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78678 ,  H01L29/78696

摘要： Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

摘要翻译： 提供一种半导体器件的制造方法，其中通过对含有氮的栅极绝缘膜进行等离子体氧化处理可以抑制薄膜晶体管的特性的劣化。 本发明的一个实施例是一种半导体器件的制造方法，该半导体器件包括薄膜晶体管，该薄膜晶体管包括栅电极，含氮的栅绝缘膜和微晶半导体膜中的沟道区。 该方法包括以下步骤：在包含氢的氧化气体气氛和含有氧原子的氧化气体的栅极绝缘膜上进行等离子体处理，并在栅极绝缘膜上形成微晶半导体膜。 满足式（1），a /b≥2和式（2），b> 0，其中，氢和氧化气体气氛中的氧化气体量分别为a和b。

公开(公告)号：US09159781B2

公开(公告)日：2015-10-13

申请号：US13433563

申请日：2012-03-29

申请人： Kanta Abe ,  Hidekazu Miyairi ,  Tetsuhiro Tanaka ,  Takashi Ienaga ,  Yoshitaka Yamamoto

发明人： Kanta Abe ,  Hidekazu Miyairi ,  Tetsuhiro Tanaka ,  Takashi Ienaga ,  Yoshitaka Yamamoto

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

摘要： Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b≧2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.