METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE
    2.
    发明申请
    METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE 审中-公开
    用于制造结构的方法,包括用于将离子注入的步骤,以稳定粘合的接合界面

    公开(公告)号:US20110165758A1

    公开(公告)日:2011-07-07

    申请号:US12997835

    申请日:2009-07-03

    IPC分类号: H01L21/762

    CPC分类号: H01L21/76254

    摘要: The invention relates to a method for making a structure for use ion applications in the fields of electronics, optics or optoelectronics. The structure includes a thin layer of semiconducting material on a supporting substrate. The method includes bonding the thin layer onto the supporting substrate by molecular adhesion at a bonding interface to obtain a structure; implanting ions at the bonding interface to transfer atoms from the thin layer to transfer atoms between the thin layer and the supporting substrate or vice versa; and heat-treating the structure in order to stabilize the bonding interface.

    摘要翻译: 本发明涉及一种在电子学,光学或光电领域制造用于离子应用的结构的方法。 该结构在支撑衬底上包括薄层的半导体材料。 该方法包括通过在接合界面处的分子粘附将薄层结合到支撑基底上以获得结构; 在结合界面处注入离子以从薄层转移原子以在薄层和支撑衬底之间转移原子,反之亦然; 并对结构进行热处理,以稳定接合界面。