摘要:
Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.
摘要翻译:本发明的实施例涉及包括基底晶片,绝缘层和顶部半导体层的基板,其中绝缘层至少包括电荷密度高于1010电荷/ cm 2的绝对值的区域。 本发明还涉及制造这种基材的方法。
摘要:
The invention relates to a method for making a structure for use ion applications in the fields of electronics, optics or optoelectronics. The structure includes a thin layer of semiconducting material on a supporting substrate. The method includes bonding the thin layer onto the supporting substrate by molecular adhesion at a bonding interface to obtain a structure; implanting ions at the bonding interface to transfer atoms from the thin layer to transfer atoms between the thin layer and the supporting substrate or vice versa; and heat-treating the structure in order to stabilize the bonding interface.
摘要:
A pin assembly for lifting and supporting substrates according to the invention comprises a roller glide for a lift pin with rollers reducing the friction of the vertical pin movement, a ball bearing sole plate with elastic suspension for re-centering the sole plate after one coating cycle and a ball-bearing pin head that lowers the friction between the pin and the substrate and minimizes lateral forces that the substrate can apply on the pin.