公开(公告)号：US4607271A

公开(公告)日：1986-08-19

申请号：US551717

申请日：1983-11-14

Applicant: Radivoje Popovic ,  Jean-Luc Berchier ,  Gernot Schneider ,  Heinz Lienhard ,  Heinrich P. Baltes ,  Katalin Solt ,  Tomislav Zajc

Inventor： Radivoje Popovic ,  Jean-Luc Berchier ,  Gernot Schneider ,  Heinz Lienhard ,  Heinrich P. Baltes ,  Katalin Solt ,  Tomislav Zajc

IPC: G01R33/06 ,  H01L29/82 ,  H01L27/22

CPC classification number: G01R33/06 ,  H01L29/82

Abstract: The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.

Abstract translation: 磁场传感器由半导体磁场传感器（例如磁电晶体管）和至少一个设置在其表面上的NiFe或NiCo膜构成。 该膜用作其磁感应/磁场反转滞后特性的过零开关。 该膜被放置在磁场传感器的场敏感区域的正上方，其容易轴垂直于传感器的电流方向定向。 半导体磁场传感器检测由薄膜产生的磁感应。

公开(公告)号：US4979149A

公开(公告)日：1990-12-18

申请号：US417338

申请日：1989-10-05

Applicant: Radivoje Popovic ,  Katalin Solt ,  Heinz Lienhard

Inventor： Radivoje Popovic ,  Katalin Solt ,  Heinz Lienhard

IPC: H01L27/04 ,  G11C11/24 ,  G11C17/02 ,  G11C17/04 ,  G11C23/00 ,  H01H1/00 ,  H01L21/822 ,  H01L27/10

CPC classification number: H01H1/0036 ,  G11C11/24 ,  G11C17/04 ,  G11C23/00 ,  H01H2001/0042 ,  Y10T307/786

Abstract: A memory device for digital electronic signals includes at least one micro-mechanical memory element. The memory element includes a support having recess defined therein and a curved mechanical component bridging the recess and fixed to the support. The mechanical component has two stable positions, each of which being maintained by mechanical forces, one concave down towards the support and the other convex up away from the support. The mechanical component is adapted to be selectively changed from one stable position to the other stable position during a writing cycle and to have its stable position determined during a reading cycle so that the memory element can be used for storing binary logic information.

Abstract translation: 用于数字电子信号的存储器件包括至少一个微机械存储元件。 存储元件包括具有限定在其中的凹部的支撑件和桥接凹部并固定到支撑件的弯曲机械部件。 机械部件具有两个稳定的位置，每个位置由机械力保持，一个朝向支撑件向下凹下，而另一个凸起向上远离支撑。 机械部件适于在写入周期期间从一个稳定位置选择性地改变到另一稳定位置，并且在读取周期期间确定其稳定位置，使得存储元件可用于存储二进制逻辑信息。

公开(公告)号：US4673964A

公开(公告)日：1987-06-16

申请号：US810929

申请日：1985-12-18

Applicant: Radivoje Popovic ,  Katalin Solt ,  Jean-Luc Berchier

Inventor： Radivoje Popovic ,  Katalin Solt ,  Jean-Luc Berchier

IPC: H01L27/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/22 ,  H01L43/06

CPC classification number: H01L27/22

Abstract: A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected through a feedback control circuit to control the thickness of the P-N junction barrier, thereby ensuring long duration, temperture stability and linearity for the Hall element.

Abstract translation: 结合在半导体主体内的霍尔元件具有在所有方向上围绕霍尔元件的有源区的P-N结屏障。 霍尔元件的输出通过反馈控制电路连接，以控制P-N结屏障的厚度，从而确保霍尔元件的长持续时间，温度稳定性和线性度。