公开(公告)号：US20090159587A1

公开(公告)日：2009-06-25

申请号：US12270094

申请日：2008-11-13

申请人： Kazuhiko SHIMANUKI ,  Daisuke HAYASHI

发明人： Kazuhiko SHIMANUKI ,  Daisuke HAYASHI

IPC分类号： H05B3/68

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.

摘要翻译： 在石英玻璃板状构件102的下表面的中央部配置有供电端子单元108供给电力的平面加热器1.电源端子单元包括小直径石英玻璃管105a 和106a，其包含向碳发生器供给电力的连接线和包含小直径石英玻璃管105a和106a的大直径石英玻璃管2。 在大直径石英玻璃管2的下端形成有凸缘部2a，在大直径石英玻璃的上端和凸缘部2a之间形成具有不同直径的弯曲部2b， 由金属板或不透明石英玻璃板构成的隔热板19,20和21包含在弯曲部分下方的大直径石英玻璃管中。

公开(公告)号：US08071920B2

公开(公告)日：2011-12-06

申请号：US12270094

申请日：2008-11-13

申请人： Kazuhiko Shimanuki ,  Daisuke Hayashi

发明人： Kazuhiko Shimanuki ,  Daisuke Hayashi

IPC分类号： H05B3/68 ,  H05B3/08

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： A planar heater 1 in which a power supply terminal unit 108 which supplies an electric power is arranged on a central portion on a lower surface of a silica glass plate-like member 102. The power supply terminal unit includes small-diameter silica glass tubes 105a and 106a, which contain a connection line which supplies an electric power to a carbon heat generator and a large-diameter silica glass tube 2 which contains the small-diameter silica glass tubes 105a and 106a. A flange portion 2a is formed on a lower end of the large-diameter silica glass tube 2, and a bent portion 2b having different diameters is formed between an upper end of the large-diameter silica glass and the flange portion 2a, and the first heat shielding plates 19, 20 and 21 configured by metal plates or opaque silica glass plates are contained in the large-diameter silica glass tube below the bent portion.

摘要翻译： 在石英玻璃板状构件102的下表面的中央部配置有供电端子单元108供给电力的平面加热器1.电源端子单元包括小直径石英玻璃管105a 和106a，其包含向碳发生器供给电力的连接线和包含小直径石英玻璃管105a和106a的大直径石英玻璃管2。 在大直径石英玻璃管2的下端形成有凸缘部2a，在大直径石英玻璃的上端和凸缘部2a之间形成具有不同直径的弯曲部2b， 由金属板或不透明石英玻璃板构成的隔热板19,20和21包含在弯曲部分下方的大直径石英玻璃管中。

公开(公告)号：US07336892B2

公开(公告)日：2008-02-26

申请号：US10391583

申请日：2003-03-20

申请人： Kazuhiko Shimanuki ,  Hiroyuki Honma ,  Norihiko Saito ,  Hideyuki Yokoyama ,  Takanori Saito ,  Ken Nakao

发明人： Kazuhiko Shimanuki ,  Hiroyuki Honma ,  Norihiko Saito ,  Hideyuki Yokoyama ,  Takanori Saito ,  Ken Nakao

IPC分类号： F21V7/00 ,  G02F1/1335

CPC分类号： H01L21/67115 ,  H01L21/68757

摘要： It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 μm, said at least one side 2a formed grooves 2c therein.

摘要翻译： 提供了半导体热处理反射板，其通过控制异物的吸附和反应的产生而耐裂纹或变形。 用于半导体热处理的所述反射板1由光学可透射材料的盘形或环形板和密封在所述盘形或环形板上的无机材料板2组成，其中所述无机 材料具有至少一侧与光学可透射材料的所述板接触，所述至少一个侧面2a具有Ra 0.1至10.0μm的表面粗糙度，所述至少一个侧面2a在其中形成沟槽2c。

公开(公告)号：US5849597A

公开(公告)日：1998-12-15

申请号：US769128

申请日：1996-12-18

申请人： Fumio Tokuoka ,  Kazuhiko Shimanuki

发明人： Fumio Tokuoka ,  Kazuhiko Shimanuki

IPC分类号： G01N1/32 ,  G01N33/20 ,  G01N1/00 ,  G01N33/00 ,  B01D00/00

CPC分类号： G01N33/20 ,  G01N1/32 ,  Y10S436/807 ,  Y10T436/25125

摘要： A treatment apparatus for analyzing the impurities in silicic material with high precision, includes a container having an inner space in which at least one analysis sample container and a sample decomposing solution are accommodated. The container is divided into a lid body and a lower body, each of the lid body and the lower body being opened at the division surface side thereof to form an open end and being closed at the surface side opposite to the division surface side to form a close end thereof. The inner peripheral surface of the open end of the lower body is formed in a stepwise shape so that the analysis sample container is disposed to be spaced from the surface of the decomposing solution which is stocked in the lower body, and the inner peripheral surfaces of the lid body and the lower body are smoothly continuously threadily engaged with each other through abutment faces thereof to keep the container in an appropriate hermetic level. Through the analysis process using the apparatus, the impurities contained in silicic materials used for semiconductor industries in which integration techniques are remarkably developed can be quantitatively analyzed in the order of ppt to obtain silicic products having high reliability.

摘要翻译： 一种高精度地分析硅质材料中的杂质的处理装置，包括具有至少一个分析用样品容器和样品分解溶液的内部空间的容器。 容器分为盖体和下体，盖体和下体各自在分割面侧开口，形成开口端，与分割面侧相反的表面侧封闭，形成 其结束。 下体的开口端的内周面形成为阶梯状，使得分析用样品容器配置成与储存在下体中的分解溶液的表面间隔开，并且内周面 盖体和下体通过其邻接面平滑地连续地彼此接合，以将容器保持在适当的气密度。 通过使用该装置的分析处理，可以以ppt的顺序对用于半导体工业中用于集成技术显着开发的硅材料中所含的杂质进行定量分析，以获得具有高可靠性的硅产品。