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公开(公告)号：US08420514B2
公开(公告)日：2013-04-16
申请号：US13382674
申请日：2010-07-01
申请人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
发明人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
IPC分类号： H01L29/36
CPC分类号： H01L21/3221 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02658
摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.
摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。
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公开(公告)号：US09017483B2
公开(公告)日：2015-04-28
申请号：US12364149
申请日：2009-02-02
IPC分类号： C23C16/458 , C30B25/12
CPC分类号： C30B25/12 , C23C16/4588
摘要： There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要翻译： 提供了一种用于气相外延生长装置的感受体，通过该感受器防止在装载硅晶片时的打滑，并且可以将晶片装载在基座的固定位置：其中具有倾斜平面的环形凹槽变宽 朝向基座的表面形成在底面的最外周上; 形成穿过基座的背面的气体释放开口，各自的截面积为2.0〜3.0mm 2，底面的所有开口面积的比例为0.25〜0.5％。
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公开(公告)号：US08906777B2
公开(公告)日：2014-12-09
申请号：US12361929
申请日：2009-01-29
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for evaluating a shape change of a semiconductor wafer is provided. The method comprises acquiring unconstrained shape data of shape data of the semiconductor wafer being placed on a reference surface in a unconstrained state; acquiring constrained shape data of shape data of the semiconductor wafer being constrained along the reference surface in a constrained state; and comparing the unconstrained shape data and the constrained shape data. A method for manufacturing the semiconductor wafer utilizing a result of the evaluation of the wafer is also provided.
摘要翻译： 提供了一种用于评估半导体晶片的形状变化的方法。 该方法包括获取以无约束状态放置在参考表面上的半导体晶片的形状数据的无约束形状数据; 获取所述半导体晶片的形状数据的约束形状数据在约束状态下沿所述参考表面被约束; 并且比较无约束形状数据和约束形状数据。 还提供了利用晶片评估结果制造半导体晶片的方法。
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公开(公告)号：US20120112319A1
公开(公告)日：2012-05-10
申请号：US13382674
申请日：2010-07-01
申请人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
发明人： Tadashi Kawashima , Masahiro Yoshikawa , Akira Inoue , Yoshiya Yoshida , Kazuhiro Iriguchi , Toshiyuki Isami
CPC分类号： H01L21/3221 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02658
摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.
摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。
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公开(公告)号：US20090235867A1
公开(公告)日：2009-09-24
申请号：US12364149
申请日：2009-02-02
IPC分类号： C23C16/458
CPC分类号： C30B25/12 , C23C16/4588
摘要： There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要翻译： 提供了一种用于气相外延生长装置的感受体，通过该感受器防止在装载硅晶片时的打滑，并且可以将晶片装载在基座的固定位置：其中具有倾斜平面的环形凹槽变宽 朝向基座的表面形成在底面的最外周上; 形成穿过基座的背面的气体释放开口，各自的截面积为2.0〜3.0mm 2，底面的所有开口面积的比例为0.25〜0.5％。
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公开(公告)号：US20090197359A1
公开(公告)日：2009-08-06
申请号：US12361929
申请日：2009-01-29
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for evaluating a shape change of a semiconductor wafer is provided. The method comprises acquiring unconstrained shape data of shape data of the semiconductor wafer being placed on a reference surface in a unconstrained state; acquiring constrained shape data of shape data of the semiconductor wafer being constrained along the reference surface in a constrained state; and comparing the unconstrained shape data and the constrained shape data. A method for manufacturing the semiconductor wafer utilizing a result of the evaluation of the wafer is also provided.
摘要翻译： 提供了一种用于评估半导体晶片的形状变化的方法。 该方法包括获取以无约束状态放置在参考表面上的半导体晶片的形状数据的无约束形状数据; 获取所述半导体晶片的形状数据的约束形状数据在约束状态下沿所述参考表面被约束; 并且比较无约束形状数据和约束形状数据。 还提供了利用晶片评估结果制造半导体晶片的方法。
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