摘要:
An overvoltage protection portion (14) includes a transistor (P1) that achieves continuity with an input voltage (VIN) used as an output voltage (VOUT) to an internal circuit when the input voltage (VIN) applied to an external terminal (T1) is not in an overvoltage state. The overvoltage protection portion (14) also includes: a transistor (P2) operating as a short circuit that short-circuits the source and the gate of the transistor (P1) and that interrupts the input voltage (VIN) when the input voltage (VIN) is in the overvoltage state; a resistor (R2); and a Zener diode (ZD1). The overvoltage protection portion (14) also includes: a transistor (NTr1) operating as a bypass circuit that supplies a constant output voltage (VOUT) from the external terminal (T1) to the internal circuit when the input voltage (VIN) is brought into the overvoltage state; a resistor (R3); and a Zener diode (ZD2).
摘要:
A switching transistor is arranged between a switching (SW) terminal and the ground terminal. An error amplifier amplifies the difference between the feedback voltage VFB that corresponds to the output voltage VOUT with a predetermined reference voltage VREF so as to generate an error voltage VERR. A pulse modulator generates a pulse signal SP having a duty ratio that is adjusted according to the error voltage VERR. A driver drives a switching transistor according to the pulse signal SP. An overvoltage detection circuit generates an overvoltage protection (OVP) signal which is asserted when the voltage at the switching (SW) terminal becomes higher than a predetermined threshold voltage. When the OVP signal is asserted, a control circuit performs a predetermined protection operation.
摘要:
A switching transistor is arranged between a switching (SW) terminal and the ground terminal. An error amplifier amplifies the difference between the feedback voltage VFB that corresponds to the output voltage VOUT with a predetermined reference voltage VREF so as to generate an error voltage VERR. A pulse modulator generates a pulse signal SP having a duty ratio that is adjusted according to the error voltage VERR. A driver drives a switching transistor according to the pulse signal SP. An overvoltage detection circuit generates an overvoltage protection (OVP) signal which is asserted when the voltage at the switching (SW) terminal becomes higher than a predetermined threshold voltage. When the OVP signal is asserted, a control circuit performs a predetermined protection operation.
摘要:
A high-side variable current source and a high-side transistor are provided in series between a supply power terminal of a control circuit and a gate of a switching transistor. A low-side variable current source and a low-side transistor are provided in series between the gate of the switching transistor and a ground terminal. A slew rate controller controls the current value of at least one of the high-side and low-side variable current sources according to the state of a setting terminal. A switching power supply device has a plurality of output transistors connected in parallel with one another and a controller that generates control signals turning on and off the output transistors at a predetermined frequency so as to generate a desired output voltage from an input voltage and supply the output voltage to a load. The controller determines which output transistor to drive according to the magnitude of the load.
摘要:
A DC/DC converter 10 has a high-side transistor QH as a switching element and a low-side transistor QL as a synchronous rectifier element. A first primary electrode D and secondary primary electrode S of the high-side transistor QH are connected to an input voltage VIN and an external terminal T1, respectively. A detection transistor QD is provided in a row with the high-side transistor QH, and the ON voltage of the high-side transistor QH when ON is output as detection voltage VQD from the detection transistor QD. The output detection voltage VQD is added to a feedback voltage VFB1 by an adder CB, and inputted to a comparator CMP1. The ON period of a one-shot pulse PS1 outputted from the comparator CMP1 is regulated so as to be in direct proportion to the sum of the detection voltage VQD and the feedback voltage VFB1.
摘要:
An image formation width calculation circuit and an image formation shift amount determination circuit are provided so that, before a visible image is formed, an effective image formation diameter of an image formation laser spot is measured, and based on the result, a shift amount of the laser spot is adjusted. An optical pickup which forms a plurality of laser spots on an optical disk is also provided. An image formation focus control laser power control circuit and an image formation laser power control circuit are also provided. A focus control laser spot is located ahead of the image formation laser spot.
摘要:
The semiconductor device according to the present invention has an n-channel output transistor wherein an input voltage is impressed on a drain, and a pulsed switching voltage that corresponds to a switching drive of the transistor is brought out from a source; a bootstrap circuit for generating a boost voltage enhanced by a predetermined electric potential above the switching voltage; an internal circuit for receiving a supply of the boost voltage to generate a switching drive signal, and supplying the signal to a gate of the output transistor; an overvoltage protection circuit for monitoring an electric potential difference between the switching voltage and the boost voltage, and generating an overvoltage detection signal; and a switching element for establishing/blocking electrical conduction between the internal circuit and the end impressed with the boost voltage, in accordance with the overvoltage detection signal.
摘要:
The operational amplifier according to the present invention has at least one differential input part for generating a voltage signal corresponding to an electric potential difference between a positive-phase input signal and a negative-phase input signal by using a differential pair configured from a pair of transistors; an output part for generating and outputting an output signal of a logic level corresponding to the voltage signal generated by the differential input part; at least one auxiliary current generator for detecting a sudden change in the positive-phase input signal or the negative-phase input signal and generating an auxiliary current; and a drive current generator for adding together a predetermined reference current and the auxiliary current and generating a drive current of the differential input part.
摘要:
The present invention provides a joining method of metal plates, which can connect two metal plates without a projection in a surface of the metal plates and a gap, and a joined unit having metal plates which are connected without a projection in a surface of the metal plates and a gap between the metal plates. The joined unit has a pair of metal plates. One of the metal plates has a hole, and another metal plate has a projection having a height less than a thickness of the one of the metal plates. The projection passes through the hole, the one of the metal plates is placed on the other of the metal plates each other, and a central part of an end surface of the projection is crushed in the hole. Thereby, the metal plates are joined to each other, and the joined unit can be provided.
摘要:
The resistance welding method of welding two objects together includes the steps of: clamping the objects between a pair of electrodes; and applying a current between the electrodes while the objects are pressed to bring them close to each other to allow a contacting surface between them to generate heat. One object includes a core member and a plated layer coating the core member and having a melting point lower than that of a metal constituting an outer surface of the core member. The objects are clamped between the electrodes and the contacting surface are allowed to generate heat to melt the plated layer to weld the outer surface of the core member of the one object and a base member of another object together. At least the outer surface of the core member and the base member are made of respective metals, between which no intermetallic compound is formed.