公开(公告)号：US07247914B2

公开(公告)日：2007-07-24

申请号：US11177576

申请日：2005-07-11

申请人： Keita Uchiyama

发明人： Keita Uchiyama

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/28202 ,  H01L21/28211 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/518

摘要： A semiconductor device includes: a first gate insulating film formed on a first nMOS transistor region in a semiconductor substrate; a second gate insulating film formed on a first pMOS transistor region in the substrate; a third gate insulating film formed on a second nMOS transistor region in the substrate; and a fourth gate insulating film formed on a second pMOS transistor region in the substrate. The first through fourth gate insulating films contain nitrogen. Each of the third and fourth gate insulating films has a thickness smaller than that of each of the first and second gate insulating films. The first gate insulating film has a nitrogen concentration peak at the interface between the first gate insulating film and the substrate. Each of the second, third and fourth gate insulating films has a nitrogen concentration peak only near an associated one of gate electrodes respectively formed thereon.

摘要翻译： 半导体器件包括：形成在半导体衬底中的第一nMOS晶体管区上的第一栅极绝缘膜; 形成在所述衬底中的第一pMOS晶体管区域上的第二栅极绝缘膜; 形成在所述衬底中的第二nMOS晶体管区上的第三栅极绝缘膜; 以及形成在所述衬底中的第二pMOS晶体管区上的第四栅极绝缘膜。 第一至第四栅极绝缘膜含有氮。 第三栅极绝缘膜和第四栅极绝缘膜的厚度均小于第一栅极绝缘膜和第二栅极绝缘膜的厚度。 第一栅极绝缘膜在第一栅极绝缘膜和衬底之间的界面具有氮浓度峰值。 第二，第三和第四栅极绝缘膜中的每一个仅在分别形成在其上的相关联的一个栅电极附近具有氮浓度峰。

公开(公告)号：US20060183290A1

公开(公告)日：2006-08-17

申请号：US11324806

申请日：2006-04-11

申请人： Hiroyuki Kamada ,  Keita Uchiyama

发明人： Hiroyuki Kamada ,  Keita Uchiyama

IPC分类号： H01L21/336

CPC分类号： H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： During a manufacturing process for a semiconductor device, the size of gate electrodes is measured within the wafer surface. The gained measurement data is compared with the data which depends on the gate length-electrical properties of the semiconductor elements, and thus, distribution in the electrical properties within the wafer surface is expected. Next, the difference between the expected data on the electrical properties and the designed value is calculated, and this difference is compared with the data which depends on the temperature-electrical properties, so that the electrical property values a reconverted to temperature values. Next, the temperature distribution within the surface which makes inconsistency in said electrical properties within the surface minimal is determined from the gained data on the temperature distribution within the surface and the data on the temperature distribution within the surface which is gained from the equipment management data of the thermal annealing apparatus.

摘要翻译： 在半导体器件的制造工艺期间，在晶片表面内测量栅电极的尺寸。 所获得的测量数据与取决于半导体元件的栅极长度 - 电性能的数据进行比较，因此期望在晶片表面内的电性能中的分布。 接下来，计算电气性能和设计值的期望数据之间的差异，并将该差异与取决于温度 - 电气特性的数据进行比较，使得电性能值a再转化为温度值。 接下来，根据从表面中获得的温度分布的数据和从设备管理数据获得的表面内的温度分布数据来确定表面内的表面内的电特性不一致的温度分布 的热退火装置。

公开(公告)号：US08800098B2

公开(公告)日：2014-08-12

申请号：US13248848

申请日：2011-09-29

申请人： Keita Uchiyama ,  Takao Yoshimoto ,  Naoki Torii

发明人： Keita Uchiyama ,  Takao Yoshimoto ,  Naoki Torii

IPC分类号： B60S1/40

CPC分类号： B60S1/3801 ,  B60S1/4016 ,  B60S2001/4022

摘要： In a connecting member, a base member includes an installation portion, to which a hook of a wiper arm configured into a U-shape form is adapted to be installed after installation of the base member to a wiper blade. A lock member is rotatably connected to the base member and is adapted to be engaged with an arcuate outer peripheral surface of the hook after installation of the hook to the installation portion. The lock member includes an engaging portion, which is adapted to be engaged with the arcuate outer peripheral surface of the hook to exert a resilient force against the arcuate outer peripheral surface of the hook. The resilient force of the engaging portion is exerted as a rotational force in a locking direction of the lock member against the arcuate outer peripheral surface of the hook.

摘要翻译： 在连接构件中，基部构件包括安装部，在将基座构件安装到刮水片上之后，安装有构造成U形形状的雨刮臂的钩子。 锁定构件可旋转地连接到基座构件，并且适于在将钩安装到安装部分之后与钩的弓形外周表面接合。 锁定构件包括接合部分，其适于与钩的弓形外周表面接合，以对钩的弓形外周表面施加弹性力。 接合部的弹性力作为锁定构件的锁定方向上的旋转力抵抗钩的弓形外周面施加。

公开(公告)号：US20120056266A1

公开(公告)日：2012-03-08

申请号：US13293603

申请日：2011-11-10

申请人： Keita UCHIYAMA ,  Kenji Yoneda

发明人： Keita UCHIYAMA ,  Kenji Yoneda

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L21/823462 ,  H01L21/02238 ,  H01L21/02332

摘要： A semiconductor device includes a plurality of gate insulating films formed on a semiconductor substrate. Of the plurality of gate insulating films, the gate insulating film having a smallest thickness in an HP transistor formation region is a silicon oxide film, and each of the remaining gate insulating films in an I/O transistor formation region and an LP transistor formation region is a silicon oxynitride film.

摘要翻译： 半导体器件包括形成在半导体衬底上的多个栅极绝缘膜。 在多个栅极绝缘膜中，在HP晶体管形成区域中具有最小厚度的栅极绝缘膜是氧化硅膜，并且I / O晶体管形成区域中的每个剩余栅极绝缘膜和LP晶体管形成区域 是氧氮化硅膜。

公开(公告)号：US20060076558A1

公开(公告)日：2006-04-13

申请号：US11217394

申请日：2005-09-02

申请人： Kiyoyuki Morita ,  Hiroyuki Kamada ,  Keita Uchiyama

发明人： Kiyoyuki Morita ,  Hiroyuki Kamada ,  Keita Uchiyama

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to prevent a junction leakage current generation across a pn junction formed under a silicide layer, even when a direct probing to an electrode formed of the silicide layer is performed. There is provided a semiconductor device including an element for evaluation, wherein the element for evaluation includes a device isolation region, a first diffusion layer region formed adjacent to the device isolation region, an electrode for probe formed to be electrically connected to the first diffusion layer region, a semiconductor region which is formed so as to contact to the first diffusion layer region, and has a conductivity type different from that of the first diffusion layer region, and an evaluation pattern which is formed to be electrically connected to the electrode for probe, and includes at least a part of the first diffusion layer region, and wherein a second diffusion layer region which has the same conductivity type as that of the first diffusion layer region is selectively formed under the first diffusion layer region formed under the electrode for probe to be contacted to the first diffusion layer region and the semiconductor region.

摘要翻译： 本发明的目的是为了防止在形成于硅化物层下面的pn结两端产生结漏电流，即使直接探测由硅化物层形成的电极。 提供了一种包括用于评估的元件的半导体器件，其中用于评估的元件包括器件隔离区域，与器件隔离区域相邻形成的第一扩散层区域，形成为与第一扩散层电连接的探针用电极 区域，形成为与第一扩散层区域接触的半导体区域，并且具有与第一扩散层区域不同的导电型，以及形成为电连接到探针用电极的评价图案 并且包括第一扩散层区域的至少一部分，并且其中具有与第一扩散层区域相同的导电类型的第二扩散层区域选择性地形成在形成在探针电极下方的第一扩散层区域的下方 以与第一扩散层区域和半导体区域接触。

公开(公告)号：US20060043493A1

公开(公告)日：2006-03-02

申请号：US11177576

申请日：2005-07-11

申请人： Keita Uchiyama

发明人： Keita Uchiyama

IPC分类号： H01L29/10

CPC分类号： H01L21/28202 ,  H01L21/28211 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/518

摘要： A semiconductor device includes: a first gate insulating film formed on a first nMOS transistor region in a semiconductor substrate; a second gate insulating film formed on a first pMOS transistor region in the substrate; a third gate insulating film formed on a second nMOS transistor region in the substrate; and a fourth gate insulating film formed on a second pMOS transistor region in the substrate. The first through fourth gate insulating films contain nitrogen. Each of the third and fourth gate insulating films has a thickness smaller than that of each of the first and second gate insulating films. The first gate insulating film has a nitrogen concentration peak at the interface between the first gate insulating film and the substrate. Each of the second, third and fourth gate insulating films has a nitrogen concentration peak only near an associated one of gate electrodes respectively formed thereon.

摘要翻译： 半导体器件包括：形成在半导体衬底中的第一nMOS晶体管区上的第一栅极绝缘膜; 形成在所述衬底中的第一pMOS晶体管区域上的第二栅极绝缘膜; 形成在所述衬底中的第二nMOS晶体管区上的第三栅极绝缘膜; 以及形成在所述衬底中的第二pMOS晶体管区上的第四栅极绝缘膜。 第一至第四栅极绝缘膜含有氮。 第三栅极绝缘膜和第四栅极绝缘膜的厚度均小于第一栅极绝缘膜和第二栅极绝缘膜的厚度。 第一栅极绝缘膜在第一栅极绝缘膜和衬底之间的界面具有氮浓度峰值。 第二，第三和第四栅极绝缘膜中的每一个仅在分别形成在其上的相关联的一个栅电极附近具有氮浓度峰。

公开(公告)号：US20120090125A1

公开(公告)日：2012-04-19

申请号：US13248848

申请日：2011-09-29

申请人： Keita UCHIYAMA ,  Takao Yoshimoto ,  Naoki Torii

发明人： Keita UCHIYAMA ,  Takao Yoshimoto ,  Naoki Torii

IPC分类号： B60S1/42

CPC分类号： B60S1/3801 ,  B60S1/4016 ,  B60S2001/4022

摘要： In a connecting member, a base member includes an installation portion, to which a hook of a wiper arm configured into a U-shape form is adapted to be installed after installation of the base member to a wiper blade. A lock member is rotatably connected to the base member and is adapted to be engaged with an arcuate outer peripheral surface of the hook after installation of the hook to the installation portion. The lock member includes an engaging portion, which is adapted to be engaged with the arcuate outer peripheral surface of the hook to exert a resilient force against the arcuate outer peripheral surface of the hook. The resilient force of the engaging portion is exerted as a rotational force in a locking direction of the lock member against the arcuate outer peripheral surface of the hook.

摘要翻译： 在连接构件中，基部构件包括安装部，在将基座构件安装到刮水片上之后，安装有构造成U形形状的雨刮臂的钩子。 锁定构件可旋转地连接到基座构件，并且适于在将钩安装到安装部分之后与钩的弓形外周表面接合。 锁定构件包括接合部分，其适于与钩的弓形外周表面接合，以对钩的弓形外周表面施加弹性力。 接合部的弹性力作为锁定构件的锁定方向上的旋转力抵抗钩的弓形外周面施加。