公开(公告)号：US20120257181A1

公开(公告)日：2012-10-11

申请号：US13516776

申请日：2010-12-13

申请人： Michimasa Funabashi ,  Kenji Otokuni ,  Hiroki Edo ,  Hideaki Suzuki

发明人： Michimasa Funabashi ,  Kenji Otokuni ,  Hiroki Edo ,  Hideaki Suzuki

IPC分类号： G03B27/52

CPC分类号： H01L21/67051 ,  G03F7/422

摘要： A single-wafer substrate processing device is provided which does not spill a processing liquid and the vapors thereof to an exterior when directly supplying the process liquid to a surface of a substrate to process the substrate and which prevents the process liquid and the vapors, etc., thereof to adhere a ceiling, etc., of a housing. The device includes a housing 1, holding means 4 that holds, in the housing 1, a substrate 3 subjected to an eliminating process of adhering materials on a processing surface with a processing surface 3a being directed to the bottom 1b of the housing, supply means that supplies a process liquid to the processing surface 3a of the substrate 3 held by the holding means 4, an inlet 1a for taking in a gaseous body in the housing 1, and an outlet 1c for evacuating from the housing the vapors of the process liquid in the housing 1 together with the gaseous body taken in from the inlet 1a.

摘要翻译： 提供了一种单晶片基板处理装置，当将处理液直接供应到基板的表面以处理基板并且防止处理液体和蒸汽等时，不会将处理液体及其蒸汽溢出到外部 附着住房屋顶等。 该装置包括壳体1，保持装置4，其在壳体1中保持经受消除处理的基板3，基板3在处理表面上粘附材料，处理表面3a指向壳体的底部1b，供给装置 其将处理液体供应到由保持装置4保持的基板3的处理表面3a，用于吸入壳体1中的气体的入口1a和用于从壳体排出处理液体的蒸气的出口1c 在壳体1中与从入口1a吸入的气体一起。

公开(公告)号：US06637445B2

公开(公告)日：2003-10-28

申请号：US09940859

申请日：2001-08-29

申请人： Kazuhisa Ogasawara ,  Katsuyoshi Nakatsukasa ,  Hirohumi Shoumori ,  Kenji Otokuni ,  Kazutoshi Watanabe ,  Hiroki Takahashi

发明人： Kazuhisa Ogasawara ,  Katsuyoshi Nakatsukasa ,  Hirohumi Shoumori ,  Kenji Otokuni ,  Kazutoshi Watanabe ,  Hiroki Takahashi

IPC分类号： B09B310

CPC分类号： H01L21/67057 ,  H01L21/6704 ,  Y10S134/902

摘要： A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50° C.±5° C. if a surface of the wafer W is hydrophobic and heats the organic solvent S at a temperature in the range of 70° C.±5° C. if the surface of the wafer W is hydrophilic.