公开(公告)号：US06637445B2

公开(公告)日：2003-10-28

申请号：US09940859

申请日：2001-08-29

申请人： Kazuhisa Ogasawara ,  Katsuyoshi Nakatsukasa ,  Hirohumi Shoumori ,  Kenji Otokuni ,  Kazutoshi Watanabe ,  Hiroki Takahashi

发明人： Kazuhisa Ogasawara ,  Katsuyoshi Nakatsukasa ,  Hirohumi Shoumori ,  Kenji Otokuni ,  Kazutoshi Watanabe ,  Hiroki Takahashi

IPC分类号： B09B310

CPC分类号： H01L21/67057 ,  H01L21/6704 ,  Y10S134/902

摘要： A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50° C.±5° C. if a surface of the wafer W is hydrophobic and heats the organic solvent S at a temperature in the range of 70° C.±5° C. if the surface of the wafer W is hydrophilic.

公开(公告)号：US20080035182A1

公开(公告)日：2008-02-14

申请号：US11574760

申请日：2005-05-23

申请人： Katsuyoshi Nakatsukasa ,  Hiroshi Yamaguchi ,  Kazuhisa Ogasawara ,  Hiroshi Kizawa

发明人： Katsuyoshi Nakatsukasa ,  Hiroshi Yamaguchi ,  Kazuhisa Ogasawara ,  Hiroshi Kizawa

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/67028 ,  H01L21/67034

摘要： A substrate treatment apparatus, comprising a box-shaped treatment tank (11) having an opening part at its upper side and a cover body (21) openably covering the opening part of the treatment tank. The cover body (21) is characterized in that a drying chamber (23) storing and drying a treated substrate (W) is formed therein, the treatment tank (11) is so formed that at least three of treatment fluid feed nozzle tubes (14a) to (14c) and (14a′) to (14c′) are disposed at each of the opposed side wall faces thereof forming the box shape horizontally at specified intervals and these feed nozzle tubes (14a) to (14c) and (14a′) to (14c′) are formed to be connected to a switching mechanism to supply a treatment fluid from the opposed side wall sides while alternately switching them at the opposed side wall faces. Thus, the treatment of various types of chemical liquids, flushing, and drying can be performed in the same treatment tank.

摘要翻译： 一种基板处理装置，包括：在其上侧具有开口部的盒状处理槽（11）和可开封地覆盖处理槽的开口部的盖体（21）。 盖体（21）的特征在于，在其中形成有储存和干燥处理过的基材（W）的干燥室（23），处理槽（11）形成为至少三个处理液供给喷嘴管（14 a）至（14c）和（14a'）至（14c'）设置在每个相对的侧壁面上，以规定的间隔水平地形成箱形，并且这些进料喷嘴管（14a）至（14 c）和（14a'）至（14c'）形成为连接到切换机构以从相对的侧壁侧供应处理流体，同时在相对的侧壁面交替切换它们。 因此，可以在相同的处理槽中进行各种化学液体的处理，冲洗和干燥。

公开(公告)号：US07648580B2

公开(公告)日：2010-01-19

申请号：US10562967

申请日：2003-12-02

申请人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

发明人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

IPC分类号： B08B3/12 ,  B08B6/00

CPC分类号： H01L21/67034 ,  H01L21/67028

摘要： A processing tank 10 is divided into a washing section 15 and a drying section 30, a clearance is formed in the joint between the sections, and the clearance is communicated with by sink 29. In drying a substrate, the substrate is moved from the washing section to the drying section, a porous plate 28 is inserted into the lower region where the clearance is formed, and a drying gas is jetted against the substrate with the internal pressure of the drying section 30 kept higher than that of the sink 29 and the internal pressure of the washing section 15 kept lower than that of the drying section 30. In this case, it is preferable that the porous plate 28 is a punched plate in which plural small holes having predetermined diameters have been made. The above configuration provides a substrate processing method and a substrate processing device in which the drying gas can uniformly and stably be supplied to an assembly of plural substrates.

摘要翻译： 处理槽10被分成洗涤部分15和干燥部分30，在部分之间的接合处形成间隙，并且间隙与槽29连通。在干燥基板时，将基板从洗涤物 将多孔板28插入到形成间隙的下部区域中，并且在干燥部30的内部压力保持高于槽29的内部压力的情况下，将干燥气体喷射到基板上，并且 洗涤部分15的内部压力保持低于干燥部分30的内部压力。在这种情况下，优选地，多孔板28是已经制成具有预定直径的多个小孔的穿孔板。 上述结构提供了一种基板处理方法和基板处理装置，其中干燥气体可以均匀且稳定地供应到多个基板的组件。

公开(公告)号：US20080105286A1

公开(公告)日：2008-05-08

申请号：US11576854

申请日：2005-05-23

申请人： Hiroshi Kizawa ,  Takahiro Koga ,  Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Hiroshi Yamaguchi

发明人： Hiroshi Kizawa ,  Takahiro Koga ,  Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Hiroshi Yamaguchi

IPC分类号： B08B3/04 ,  H01L21/304 ,  B08B3/12

CPC分类号： H01L21/67057 ,  H01L21/67051

摘要： A substrate treatment apparatus is provided with a treatment bath (1) composed of a bottomed container which is surrounded by side walls (2b-2e) on the four sides and is open at the top, and first and second supplying nozzle tubes (10a-10d) which supply the treatment bath (1) with a treatment solution. The first and second supplying nozzle tubes (10a-10d) are composed of supplying nozzle tubes having a plurality of jetting ports (11) arranged on one line at prescribed intervals on each side plane in a longitudinal direction of the hollow tube-shaped body. The jetting ports of the first supplying nozzle tubes (10b, 10d) among the nozzle tubes are inclined diagonally downward at a prescribed angle from the horizontal direction, the jetting ports of the second supplying nozzle tubes (10a, 10c) are inclined diagonally upward at a prescribed angle from the horizontal direction, and the supplying nozzle tubes are arranged substantially horizontal at prescribed intervals on one side wall plane (2b) of the treatment bath (1). Stagnation of the treatment solution in the treatment bath is eliminated, uniform substrate treatment is made possible and furthermore, particle removal is facilitated.

摘要翻译： 基板处理装置设置有由四边侧壁（2b-2e）围绕的底部容器构成的处理槽（1），并且在顶部开口，并且第一和第二供给喷嘴管（ 10 a-10 d），其用处理溶液供应处理浴（1）。 第一和第二供应喷嘴管（10a-10d）由提供喷嘴管组成，该喷嘴管具有沿着中空管状的纵向方向的每个侧面上以规定间隔布置在一条线上的多个喷射口 身体。 喷嘴管中的第一供给喷嘴管（10b，10d）的喷射口从水平方向以规定角度向斜下方倾斜，第二供给喷嘴管（10a，10b）的喷射口为 从水平方向以规定角度倾斜向上倾斜，并且供给喷嘴管以规定的间隔布置在处理槽（1）的一个侧壁面（2b）上。 消除处理液中处理溶液的滞留，使得可以均匀的基底处理成为可能，并且促进颗粒去除。

公开(公告)号：US07437834B2

公开(公告)日：2008-10-21

申请号：US10567792

申请日：2003-12-02

申请人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

发明人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

IPC分类号： F26B7/00

CPC分类号： H01L21/67051 ,  H01L21/02052 ,  H01L21/67028

摘要： A substrate processing apparatus 10 including a vapor generating unit 371 which generates a mixed gas consisting of an organic solvent vapor and an inert gas by bubbling the inert gas in the organic solvent; support means for supporting a plurality of substrates to be vertically arranged in parallel at equal pitches; a processing vessel 15 which accommodates multiple substrates supported by the support means; a lid 30 for covering the upper opening of the processing vessel; jet nozzles 33 provided in the lid 30; and first piping 3712, 342, 3421, and 3422 which causes the vapor generating unit and the jet nozzles to communicate with each other. In the substrate processing apparatus 10, the first piping and the jet nozzles are respectively equipped with heaters, and the heaters are controlled by means of dry gas containing organic solvent mists of submicron size being emitted from the jet nozzles. According to the invention, Since micro-size organic solvent vapor is used, the substrate processing method and apparatus of the invention ensures not only high-quality surface processing but also the reduction of processing time.

摘要翻译： 一种基板处理装置10，其包括通过使惰性气体在有机溶剂中鼓泡而产生由有机溶剂蒸气和惰性气体组成的混合气体的蒸汽发生单元37 1; 支撑装置，用于以相等的间距平行地垂直设置多个基板; 容纳由支撑装置支撑的多个基板的处理容器15; 用于覆盖处理容器的上部开口的盖子30; 设置在盖30中的喷嘴33; 和第一管道37 12，34 32，34 21和34 22，其导致蒸汽产生单元和 喷嘴相互连通。 在基板处理装置10中，第一配管和喷嘴分别配备有加热器，并且通过含有从喷嘴喷出的亚微米尺寸的有机溶剂的干燥气体来控制加热器。 根据本发明，由于使用微尺寸有机溶剂蒸气，本发明的基板处理方法和装置不仅确保了高质量的表面处理，而且确保了处理时间的缩短。

公开(公告)号：US20060201363A1

公开(公告)日：2006-09-14

申请号：US10567792

申请日：2003-12-02

申请人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

发明人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

IPC分类号： B41F33/00

CPC分类号： H01L21/67051 ,  H01L21/02052 ,  H01L21/67028

摘要： A substrate processing apparatus 10 including a vapor generating unit 371 which generates a mixed gas consisting of an organic solvent vapor and an inert gas by bubbling the inert gas in the organic solvent; support means for supporting a plurality of substrates to be vertically arranged in parallel at equal pitches; a processing vessel 15 which accommodates multiple substrates supported by the support means; a lid 30 for covering the upper opening of the processing vessel; jet nozzles 33 provided in the lid 30; and first piping 3712, 342, 3421, and 3422 which causes the vapor generating unit and the jet nozzles to communicate with each other. In the substrate processing apparatus 10, the first piping and the jet nozzles are respectively equipped with heaters, and the heaters are controlled by means of dry gas containing organic solvent mists of submicron size being emitted from the jet nozzles. According to the invention, Since micro-size organic solvent vapor is used, the substrate processing method and apparatus of the invention ensures not only high-quality surface processing but also the reduction of processing time.

摘要翻译： 一种基板处理装置10，其包括通过使惰性气体在有机溶剂中鼓泡而产生由有机溶剂蒸气和惰性气体组成的混合气体的蒸汽发生单元37 1; 支撑装置，用于以相等的间距平行地垂直设置多个基板; 容纳由支撑装置支撑的多个基板的处理容器15; 用于覆盖处理容器的上部开口的盖子30; 设置在盖30中的喷嘴33; 和第一管道37 12，34 32，34 21和34 22，其导致蒸汽产生单元和 喷嘴相互连通。 在基板处理装置10中，第一配管和喷嘴分别配备有加热器，并且通过含有从喷嘴喷出的亚微米尺寸的有机溶剂的干燥气体来控制加热器。 根据本发明，由于使用微尺寸有机溶剂蒸气，本发明的基板处理方法和装置不仅确保了高质量的表面处理，而且确保了处理时间的缩短。

公开(公告)号：US20060162745A1

公开(公告)日：2006-07-27

申请号：US10562967

申请日：2003-12-02

申请人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

发明人： Katsuyoshi Nakatsukasa ,  Kazuhisa Ogasawara ,  Yoshiaki Sakaihara ,  Yoshihiro Haruki ,  Munenori Kawate

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  H01L21/67028

摘要： A processing tank 10 is divided into a washing section 15 and a drying section 30, a clearance is formed in the joint between the sections, and the clearance is communicated with by sink 29. In drying a substrate, the substrate is moved from the washing section to the drying section, a porous plate 28 is inserted into the lower region where the clearance is formed, and a drying gas is jetted against the substrate with the internal pressure of the drying section 30 kept higher than that of the sink 29 and the internal pressure of the washing section 15 kept lower than that of the drying section 30. In this case, it is preferable that the porous plate 28 is a punched plate in which plural small holes having predetermined diameters have been made. The above configuration provides a substrate processing method and a substrate processing device in which the drying gas can uniformly and stably be supplied to an assembly of plural substrates.

摘要翻译： 处理槽10分为洗涤部15和干燥部30，在各部之间的接合部形成间隙，通过槽29连通间隙。 在干燥基板时，将基板从洗涤部移动到干燥部，将多孔板28插入到形成有间隙的下部区域中，在干燥的内部压力下将干燥气体喷射到基板上 部分30保持高于水槽29的高度，并且洗涤部分15的内部压力保持低于干燥部分30的内部压力。 在这种情况下，优选多孔板28是已经制成多个具有预定直径的小孔的穿孔板。 上述结构提供了一种基板处理方法和基板处理装置，其中干燥气体可以均匀且稳定地供应到多个基板的组件。