Monolithic hard pellicle
    1.
    发明授权
    Monolithic hard pellicle 失效
    单片硬膜

    公开(公告)号:US07110195B2

    公开(公告)日:2006-09-19

    申请号:US10709326

    申请日:2004-04-28

    CPC分类号: G03F1/64 G03F1/62 G03F7/70983

    摘要: A monolithic optical pellicle and method of making used to protect a photomask during photolithography processing. The monolithic optical pellicle is comprised of a pellicle plate having a recessed central portion integrally formed with a perimeter frame of the pellicle plate such that it is a one-piece optical pellicle. The monolithic optical pellicle comprises a material of sufficient rigidity to minimize distortions in and maximize durability of the pellicle when used in combination with the recessed portion having a thickness that prevents sagging thereof due to applied forces on the resultant monolithic optical pellicle. This recessed central portion is the optical pellicle portion of the present monolithic optical pellicle, while the integral perimeter frame is used to attach the monolithic optical pellicle at the desired stand-off distance to a photomask. The monolithic optical pellicle preferably comprises a material that is transparent to an exposure field at about 157 nm wavelengths.

    摘要翻译: 一种单片光学防护薄膜和用于在光刻处理期间保护光掩模的方法。 单片光学防护薄膜组件由具有与防护薄膜组件的周边框架一体形成的凹形中心部分的防护薄膜组成,使得它是一体的光学防护薄片组件。 单片光学防护薄膜组件包括足够刚度的材料,以最小化防护薄膜组件的变形并最大化耐久性的材料,当与具有防止由于所得单片光学防护薄膜组件上施加的力而下垂的凹陷部分组合时。 这个凹陷的中心部分是本单片光学防护薄膜的光学防护薄膜部分,而整体的周边框架用于以一个光掩模的所需的间隔距离连接单片光学薄膜。 单片光学防护薄膜优选包括对于约157nm波长的曝光场透明的材料。

    Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices
    2.
    发明授权
    Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices 失效
    用于校正在电子设备生产中使用的光掩模中的重力下垂的方法和装置

    公开(公告)号:US07239376B2

    公开(公告)日:2007-07-03

    申请号:US11161215

    申请日:2005-07-27

    IPC分类号: G03B27/62 G03B27/42

    CPC分类号: G03F7/70783 G03F7/707

    摘要: In a projection apparatus for projecting optical images, an optical mask support stage having a pair of separated arms. Each arm being provided with a respective mask chucking bar that supports a respective edge of a thin glass mask and applies to the respective edge a bending moment away from the center of the mask to reduce or eliminate any gravitational induced sag in the center of the mask thereby improving the quality of the images projected by the apparatus.

    摘要翻译: 在用于投影光学图像的投影装置中,具有一对分离的臂的光学掩模支撑台。 每个臂设置有相应的掩模卡盘,其支撑薄玻璃掩模的相应边缘,并且向相应边缘施加远离掩模中心的弯曲力矩,以减少或消除掩模中心中的任何引力引起的下垂 从而提高由该装置投影的图像的质量。

    Method for reducing photo-mask distortion
    3.
    发明授权
    Method for reducing photo-mask distortion 失效
    降低光掩模失真的方法

    公开(公告)号:US07473501B1

    公开(公告)日:2009-01-06

    申请号:US12058724

    申请日:2008-03-30

    IPC分类号: G03F1/00 A47G1/12

    CPC分类号: G03F1/64 G03F1/60

    摘要: The present invention describes a structure and method for reducing or eliminating the flatness distortion effects of a photomask assembly which occurs when a pellicle is mounted to the photomask. The invention is to perform a partial disconnection of the mounting area of the pellicle frame from the print area of the mask. An exemplary embodiment of the present invention achieves the distortion reduction or elimination using a trench in the photomask as the partial disconnection.

    摘要翻译: 本发明描述了一种用于减少或消除当防护薄膜组件安装在光掩模上时出现的光掩模组件的平坦度失真效应的结构和方法。 本发明是为了使防护薄膜组件框架的安装区域与掩模的打印区域部分断开连接。 本发明的示例性实施例使用光掩模中的沟槽作为部分断开来实现失真减少或消除。

    Thin tantalum silicon composite film formation and annealing for use as electron projection scatterer
    4.
    发明授权
    Thin tantalum silicon composite film formation and annealing for use as electron projection scatterer 有权
    薄钽硅复合薄膜的形成和退火用作电子投射散射体

    公开(公告)号:US06696205B2

    公开(公告)日:2004-02-24

    申请号:US09745576

    申请日:2000-12-21

    IPC分类号: G03F900

    摘要: A thin transition-metal based scattering layer of a mask blank for use in EPL systems is formed by providing the thin transition-metal scattering layer directly over membrane layers on a lot of substrates, thereby forming a continuous contact between the single transition metal-based scattering layer and the membrane layer. Preferably, the single transition metal-based scattering layer is a single tantalum-silicon composite scattering layer having a stoichiometry of TaxSi. The deposition parameters for depositing the thin transition-metal based scattering layer are adjusted to provide the scattering layer uniformly over all substrates within the lot. A first substrate from the lot of substrates is then selected, an initial stress measurement of the scattering layer is determined and then the substrate is annealed at a first temperature. The stress of the scattering layer over the first annealed substrate is determined, and subsequently the anneal temperature is adjusted based on a comparison between the pre-anneal, initial stress measurement and the post-annealed stress measurement. A second substrate from the lot of substrates is then selected, annealed at the adjusted temperature, stress measurement of the scattering layer of the second substrate is determined, and the anneal temperature may once again be adjusted. The above process is repeated until a targeted stress level of the thin transition-metal based scattering layer of the mask blank has been obtained. The thin scattering layer is adapted to have final film stress controllable to within ±10% of the targeted stress.

    摘要翻译: 用于EPL系统的掩模毛坯的薄过渡金属基散射层通过在许多基底上的膜层上直接提供薄的过渡金属散射层而形成,从而在单过渡金属基 散射层和膜层。 优选地,单过渡金属基散射层是具有TaxSi的化学计量的单个钽 - 硅复合散射层。 调整用于沉积薄过渡金属的散射层的沉积参数,以在散射层内的所有衬底上均匀地提供散射层。 然后选择来自大量基板的第一基板,确定散射层的初始应力测量,然后在第一温度下退火基板。 确定第一退火衬底上的散射层的应力,然后基于预退火,初始应力测量和后退火应力测量之间的比较来调整退火温度。 然后选择来自大量基板的第二基板,在调节温度下退火,确定第二基板的散射层的应力测量,并且可以再次调整退火温度。 重复上述过程,直到获得掩模板的薄过渡金属基散射层的目标应力水平。 薄散射层适于使最终膜应力可控制在目标应力的±10%以内。