公开(公告)号：US06171972B2

公开(公告)日：2001-01-09

申请号：US09191966

申请日：1998-11-13

Applicant: Mehran Mehregany ,  Christopher A. Bang ,  Kevin C. Stark

Inventor： Mehran Mehregany ,  Christopher A. Bang ,  Kevin C. Stark

IPC: H01L2100

CPC classification number: B05B1/3436 ,  B81B2201/051 ,  B81C1/00531

Abstract: A method for forming micromachined devices out of a polycrystalline silicon substrate using deep reactive ion etching to form the micromachined device. The method comprises the steps of providing a bulk material substrate of polycrystalline silicon, and etching the bulk material using deep reactive ion etching to form the micromachined device. The present invention also includes a method for forming a micromachined device comprising the steps of providing a first layer of single crystal silicon and etching a first set of elements on the first layer. The method further includes the steps of providing a second layer of single crystal silicon, etching a second set of elements on the second layer, and joining the first and second layers together such that the crystal planes of the first layer and the second layer are misaligned and such that the first set and the second set of elements are properly aligned.

Abstract translation: 使用深反应离子蚀刻从多晶硅衬底形成微加工器件以形成微机械加工器件的方法。 该方法包括以下步骤：提供多晶硅的散装材料基板，并使用深反应离子蚀刻来蚀刻散装材料以形成微机械加工装置。 本发明还包括一种用于形成微加工装置的方法，包括以下步骤：提供第一层单晶硅并蚀刻第一层上的第一组元件。 该方法还包括以下步骤：提供第二层单晶硅，蚀刻第二层上的第二组元件，以及将第一和第二层接合在一起，使得第一层和第二层的晶面失配 并且使得第一组和第二组元件被适当对准。

公开(公告)号：US06431003B1

公开(公告)日：2002-08-13

申请号：US09656202

申请日：2000-09-06

Applicant: Kevin C. Stark ,  Christopher A. Bang

Inventor： Kevin C. Stark ,  Christopher A. Bang

IPC: G01L912

CPC classification number: G01L9/0073 ,  G01L13/026

Abstract: A pressure sensor for measuring the differential pressure of a first and a second fluid. The sensor includes a housing having an internal opening, a first diaphragm disposed in the opening and exposed to the first fluid, and a second diaphragm disposed in the opening and exposed to the second fluid. The first diaphragm and the second diaphragm are each made of a conductive material and coupled together such that the differential pressure of the first and second fluids deflects the first and second diaphragms in the same direction. The deflection of the first and second diaphragms can be sensed to determine the differential pressure.

Abstract translation: 一种用于测量第一和第二流体的压差的压力传感器。 传感器包括具有内部开口的壳体，设置在开口中并暴露于第一流体的第一隔膜，以及设置在开口中并暴露于第二流体的第二隔膜。 第一膜片和第二膜片各自由导电材料制成并且联接在一起，使得第一和第二流体的压差使第一和第二膜片沿相同方向偏转。 可以检测第一和第二隔膜的偏转以确定差压。

公开(公告)号：US06444487B1

公开(公告)日：2002-09-03

申请号：US09245272

申请日：1999-02-05

Applicant: Bradley J. Boggs ,  Marcus S. Just ,  Kevin C. Stark ,  Christopher A. Bang

Inventor： Bradley J. Boggs ,  Marcus S. Just ,  Kevin C. Stark ,  Christopher A. Bang

IPC: H01L2100

CPC classification number: G01L1/2293 ,  G01L1/18 ,  G01L9/0055

Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

Abstract translation: 包括应变感测元件的普通柔性应变计和支撑应变感测元件的大体柔性基底。 应变传感元件由单晶或多晶半导体材料制成。 本发明还包括一种用于形成大体柔性应变计的方法，包括选择具有一部分基材的晶片和位于其上的单晶或多晶半导体材料的部分的步骤。 该方法还包括以下步骤：从半导体材料中蚀刻应变感测元件，并将基本上柔性的衬底形成在所述感测元件上。