利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.018 秒)

    DEPOSITION METHODS FOR BARRIER AND TUNGSTEN MATERIALS
    1.
    发明申请
    DEPOSITION METHODS FOR BARRIER AND TUNGSTEN MATERIALS 失效
    阻挡材料和金属材料的沉积方法

    公开(公告)号：US20080268636A1

    公开(公告)日：2008-10-30

    申请号：US12171132

    申请日：2008-07-10

    申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

    摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

    摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。

    Deposition methods for barrier and tungsten materials
    2.
    发明授权
    Deposition methods for barrier and tungsten materials 有权
    屏障和钨材料的沉积方法

    公开(公告)号：US07416979B2

    公开(公告)日：2008-08-26

    申请号：US11456073

    申请日：2006-07-06

    申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864

    摘要： Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

    摘要翻译： 提供了一种在衬底上沉积阻挡层和钨材料的方法的实施例。 在一个实施例中，一种方法提供在衬底上形成阻挡层并将衬底暴露于硅烷气体，以在浸泡过程期间在阻挡层上形成薄的含硅层。 该方法还进一步在原子层沉积工艺期间在阻挡层和薄的含硅层上沉积钨成核层，并在化学气相沉积工艺期间在钨成核层上沉积钨体层。 在一些示例中，阻挡层包含金属钴和钴硅化物，或金属镍和镍硅化物。 在其它实例中，阻挡层包含金属钛和氮化钛，或金属钽和氮化钽。

    Barrier formation using novel sputter deposition method with PVD, CVD, or ALD
    3.
    发明授权
    Barrier formation using novel sputter deposition method with PVD, CVD, or ALD 有权
    使用PVD，CVD或ALD的新型溅射沉积方法形成阻挡层

    公开(公告)号：US06740585B2

    公开(公告)日：2004-05-25

    申请号：US10044412

    申请日：2002-01-09

    申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    IPC分类号： H01L2141

    CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

    摘要： Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.

    摘要翻译： 提供了用于形成金属或金属硅化物阻挡层的方法和装置。 一方面，提供了一种处理衬底的方法，包括将其上设置有硅材料的衬底定位在衬底处理系统中，在第一处理室中在衬底表面上沉积第一金属层，通过使 硅材料和第一金属层，并且在第二处理室中在基底上原位沉积第二金属层。 另一方面，该方法在包括负载锁定室的设备中进行，中间衬底传送区域包括第一衬底传送室和第二衬底传送室，耦合到第一衬底传送室的物理气相沉积处理室，以及 耦合到第二衬底传送室的化学气相沉积室。

    Deposition methods for barrier and tungsten materials
    4.
    发明授权
    Deposition methods for barrier and tungsten materials 失效
    屏障和钨材料的沉积方法

    公开(公告)号：US07611990B2

    公开(公告)日：2009-11-03

    申请号：US12171132

    申请日：2008-07-10

    申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

    摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

    摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。