摘要:
A backlight unit with a new configuration is disclosed. The backlight unit includes: a main support formed using a mold which opens upward; a light source unit disposed on one side of the main support; a light guide plate disposed parallel to the light source unit and configured to convert dot light emitted from the light source unit into two-dimensional light; and optical sheets disposed on the light guide plate. The main support is provided with a light incident space, which allows light emitted from the light source unit to be entirely and evenly entered to the light guide plate, on its one side opposite to the light source unit.
摘要:
Embodiments of the invention include a non-volatile memory device manufactured using ion-implantation, and a method of manufacturing the same. A dielectric layer may be formed on a semiconductor substrate, and an ion implantation layer, which may be used as a charge trapping site, may be formed by ion implantation with Si or Ge. Then, an annealing process may be performed. Subsequently, a process for forming a transistor on the dielectric layer may be performed.
摘要:
A light emitting device according to the embodiment includes a conductive support substrate including plural pairs of first and second conductive layers; alight emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers on the conductive support substrate; and an electrode on the light emitting structure layer. The first and second conductive layers are formed by using the same material.
摘要:
A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.
摘要:
A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.
摘要:
A backlight unit of a liquid crystal display device includes a mold frame having a receiving space for receiving a reflection sheet, a prism sheet a diffusion sheet, a plurality of light-emitting diodes, and a shielding tape for affixing the reflection sheet, the prism sheet, the plurality of light-emitting diodes and the diffusion sheet within the receiving space, wherein a first color is colored at a plurality of first colored areas at a lower surface of the shielding tape corresponding to the plurality of light-emitting diodes and a second color is colored at a remaining area of the lower surface of the shielding tape other than the plurality of first colored areas.
摘要:
A backlight unit of a liquid crystal display device includes a mold frame having a receiving space for receiving a reflection sheet, a prism sheet a diffusion sheet, a plurality of light-emitting diodes, and a shielding tape for affixing the reflection sheet, the prism sheet, the plurality of light-emitting diodes and the diffusion sheet within the receiving space, wherein a first color is colored at a plurality of first colored areas at a lower surface of the shielding tape corresponding to the plurality of light-emitting diodes and a second color is colored at a remaining area of the lower surface of the shielding tape other than the plurality of first colored areas.
摘要:
A light emitting device according to the embodiment includes a conductive support substrate including plural pairs of first and second conductive layers; alight emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers on the conductive support substrate; and an electrode on the light emitting structure layer. The first and second conductive layers are formed by using the same material.
摘要:
A backlight unit with a new configuration is disclosed. The backlight unit includes: a main support formed using a mold which opens upward; a light source unit disposed on one side of the main support; a light guide plate disposed parallel to the light source unit and configured to convert dot light emitted from the light source unit into two-dimensional light; and optical sheets disposed on the light guide plate. The main support is provided with a light incident space, which allows light emitted from the light source unit to be entirely and evenly entered to the light guide plate, on its one side opposite to the light source unit.