公开(公告)号：US4735633A

公开(公告)日：1988-04-05

申请号：US65532

申请日：1987-06-23

申请人： Kin-Chung R. Chiu

发明人： Kin-Chung R. Chiu

IPC分类号： B01D53/46 ,  B01D53/00 ,  B01D53/32 ,  B01D53/34 ,  B01D53/64 ,  B01D53/68 ,  B01J19/08 ,  B03C3/38 ,  C23C16/44 ,  H01J37/32 ,  B03C9/02

CPC分类号： H01J37/32568 ,  B01D53/00 ,  B01D53/32 ,  B01D53/34 ,  B01J19/088 ,  B03C3/38 ,  C23C16/4412 ,  B01J2219/0894

摘要： Vapor phase waste species are removed from effluent gas streams using a plasma extraction reactor comprising a pair of parallel, spaced-apart electrodes. The electrodes are driven under conditions, usually at radio frequency, to induce a glow discharge in the waste species, and the excited species are deposited directly on the electrode surface. By providing a very high ratio of electrode area to reactor volume and waste gas volumetric flow rate, substantially complete removal of the waste species can be effected. The system is particularly useful in removing contaminant species discharged from semiconductor processing operations, such as chemical vapor deposition and plasma etching. The method and system are particularly advantageous in that the vapor phase waste products are converted to a solid phase deposited directly on the electrodes which may then be disposed of.

公开(公告)号：US4554045A

公开(公告)日：1985-11-19

申请号：US445014

申请日：1982-11-29

申请人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

发明人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

IPC分类号： H01L29/267 ,  H01L29/76 ,  H01L29/872 ,  C30B25/14

CPC分类号： H01L29/872 ,  H01L29/267 ,  H01L29/7606 ,  Y10S117/905

摘要： Described is a method for producing semiconductor heterostructures incorporating a metal layer. The metal layer, typically a metal-silicide, can be produced by, e.g., co-deposition or reaction with the substrate. The resulting silicide is typically epitaxial and of high crystalline perfection.

摘要翻译： 描述了一种用于制造并入金属层的半导体异质结构的方法。 金属层，通常为金属硅化物，可以通过例如共沉积或与基底反应来制备。 所得到的硅化物通常是外延和高结晶完整性。

公开(公告)号：US4492971A

公开(公告)日：1985-01-08

申请号：US156649

申请日：1980-06-05

申请人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

发明人： John C. Bean ,  Kin-Chung R. Chiu ,  John M. Poate

IPC分类号： H01L29/267 ,  H01L29/76 ,  H01L29/872 ,  H01L29/48

CPC分类号： H01L29/267 ,  H01L29/7606 ,  H01L29/872

摘要： Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detailed, and hot electron devices using this structure are analyzed briefly.

摘要翻译： 描述了结合有金属层的半导体异质结构。 描述了基于异质结构的器件，以及用于制备异质结构的技术。 详细描述金属层是金属硅化物的具体实施方案，并简要分析使用该结构的热电子器件。