中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.012 seconds)

    Method of producing active matrix substrate
    1.
    发明授权
    Method of producing active matrix substrate 有权
    生产有源矩阵基板的方法

    公开(公告)号：US07855152B2

    公开(公告)日：2010-12-21

    申请号：US11782929

    申请日：2007-07-25

    Applicant: Kiyoshi Yanase ,  Satoshi Doi

    Inventor： Kiyoshi Yanase ,  Satoshi Doi

    IPC: H01L21/302

    CPC classification number: H01L21/76802 ,  H01L21/31116 ,  H01L27/124 ,  H01L27/1288

    Abstract: The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.

    Abstract translation: 本发明提供了一种有源矩阵基板的制造方法，其中通过单掩模工艺形成多个接触孔，以达到存在于绝缘层中不同深度位置并且不被干蚀刻蒸发的金属膜 使用含氟气体。 该方法包括使用CHF 3，CF 4和O 2的混合气体进行干蚀刻以形成多个接触孔的步骤，对多个接触孔进行氧化灰化的步骤，以及在该方法中形成透明导电膜的步骤 多个接触孔。

    Semi-transmissive type liquid-crystal display device and method of fabricating the same
    3.
    发明授权
    Semi-transmissive type liquid-crystal display device and method of fabricating the same 有权
    半透射型液晶显示装置及其制造方法

    公开(公告)号：US07570327B2

    公开(公告)日：2009-08-04

    申请号：US11879495

    申请日：2007-07-18

    Applicant: Hideto Motoshima ,  Kiyoshi Yanase ,  Yasushi Umihira ,  Tsutomu Hamada ,  Norihiro Sakumichi

    Inventor： Hideto Motoshima ,  Kiyoshi Yanase ,  Yasushi Umihira ,  Tsutomu Hamada ,  Norihiro Sakumichi

    IPC: G02F1/1335

    CPC classification number: G02F1/133555 ,  G02F1/1362 ,  G02F1/136286

    Abstract: A semi-transmissive type liquid-crystal display device suppresses the reduction and corrosion of the transmission or common electrode due to the cell corrosion reaction with a simple method. In each pixel region, the reflection electrode is formed over the glass plate, where the interlayer insulating film and the barrier metal film intervene between them. The reflection electrode is electrically connected to the transmission electrode by way of the barrier metal film. The transmission electrode and the corresponding scanning line thereto are apart from each other at a distance of 2 μm (preferably, 3 μm) or greater. A developer solution penetrating through the crack formed in the barrier metal film does not reach the transmission electrode (or common electrode), preventing the reduction and corrosion of the transmission or common electrode.

    Abstract translation: 半透射型液晶显示装置通过简单的方法抑制了由于电池腐蚀反应引起的透射率或普通电极的减少和腐蚀。 在每个像素区域中，反射电极形成在玻璃板上，其中层间绝缘膜和阻挡金属膜介于它们之间。 反射电极通过阻挡金属膜电连接到透射电极。 传输电极及其对应的扫描线彼此间距离为2μm（优选3μm）或更大。 渗透在阻挡金属膜中形成的裂纹的显影剂溶液不会到达透射电极（或公共电极），从而防止透光体或公共电极的还原和腐蚀。

    METHOD OF PRODUCING ACTIVE MATRIX SUBSTRATE
    4.
    发明申请
    METHOD OF PRODUCING ACTIVE MATRIX SUBSTRATE 有权
    生产活性基质底物的方法

    公开(公告)号：US20080026573A1

    公开(公告)日：2008-01-31

    申请号：US11782929

    申请日：2007-07-25

    Applicant: Kiyoshi Yanase ,  Satoshi Doi

    Inventor： Kiyoshi Yanase ,  Satoshi Doi

    IPC: H01L21/44

    CPC classification number: H01L21/76802 ,  H01L21/31116 ,  H01L27/124 ,  H01L27/1288

    Abstract: The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.

    Abstract translation: 本发明提供了一种有源矩阵基板的制造方法，其中通过单掩模工艺形成多个接触孔，以达到存在于绝缘层中不同深度位置并且不被干蚀刻蒸发的金属膜 使用含氟气体。 该方法包括使用CHF 3，CF 4和O 2 2的混合气体进行干蚀刻以形成多个接触孔的步骤， 对多个接触孔进行氧化灰化的工序，以及在上述多个接触孔中形成透明导电膜的工序。

Patent Agency Ranking