Abstract:
An optical detector with an arrangement of several semiconductor layers has at least one zone absorbing in a predetermined wavelength region, at least one zone which is at least partially light-permeable in the predetermined wavelength region, one semiconductor layer which is absorbing in the predetermined wavelength region, a semiconductor layer which is located under the first mentioned semiconductor layer and is at least partially light-permeable in the predetermined wavelength region, the at least one light-permeable zone is formed as an interruption in the absorbing semiconductor layer, and a throughgoing doping provided on an upper surface of the absorbing semiconductor layer which surrounds the interruption and at least a part of an upper surface of the at least partially light-permeable semiconductor layer, wherein, the optical detector is produced by a new method and used for various applications.
Abstract:
The device for generating an electrical control according to a position of a light beam in relation to a separating line includes two photodetectors (14,24), one (14) of which is arranged for detecting light falling on one side of the separating line and another (24) of which is arranged for detecting light falling on another side of the separating line. The separating line is an edge (30) extending between two (1,1,1) crystallographic planes of a crystalline substrate and the (1,1,1) crystallographic planes reflect respective parts of the light beam to the respective photodetectors.