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    Porous membrane
    2.
    发明申请
    Porous membrane 失效
    多孔膜

    公开(公告)号：US20050145561A1

    公开(公告)日：2005-07-07

    申请号：US10520864

    申请日：2003-07-10

    申请人： Masato Takai ,  Yoichi Matsumoto ,  Kouji Sekiguchi ,  Tomoki Kakiuchi ,  Hitoshi Tsuruta ,  Takao Shimizu

    发明人： Masato Takai ,  Yoichi Matsumoto ,  Kouji Sekiguchi ,  Tomoki Kakiuchi ,  Hitoshi Tsuruta ,  Takao Shimizu

    IPC分类号： A61M1/16 ,  B01D67/00 ,  B01D69/08 ,  B01D71/56

    CPC分类号： B01D71/56 ,  B01D67/0009 ,  B01D69/08 ,  B01D2325/023 ,  B01D2325/22 ,  B01D2325/32

    摘要： A polyamide having an equilibrium water absorption of not more than 10% is used as a main material. As a polyamide having an equilibrium water absorption of not.more than 10%, for example, a polyamide comprising a dicarboxylic acid component comprising 60-100 mol % of terephthalic acid and a diamine component comprising 60-100 mol % of 1,9-nonanediamine and/or 2-methyl-1,8-octanediamine is used. As a result, a porous membrane showing extremely small dimensional change even after a hot water treatment, and particularly useful as a medical separation membrane permitting an AC sterilization treatment and the like is obtained.

    摘要翻译： 使用平衡吸水率不大于10％的聚酰胺作为主要材料。 作为平衡吸水率为10％以下的聚酰胺，例如可列举含有60-100摩尔％对苯二甲酸的二羧酸成分和含有60〜100摩尔％的1,9-壬二胺的二胺成分的聚酰胺 和/或2-甲基-1,8-辛二胺。 结果，即使在热水处理后也显示出极小的尺寸变化的多孔膜，并且特别可用作允许进行AC灭菌处理的医用分离膜等。

    Microcontroller with program recomposing function
    4.
    发明授权
    Microcontroller with program recomposing function 失效
    具有程序重组功能的微控制器

    公开(公告)号：US5426746A

    公开(公告)日：1995-06-20

    申请号：US272863

    申请日：1994-07-08

    申请人： Kouji Sekiguchi

    发明人： Kouji Sekiguchi

    IPC分类号： G06F21/22 ,  G06F9/06 ,  G06F9/445 ,  G06F11/00 ,  G06F15/78

    CPC分类号： G06F9/328 ,  G06F8/66

    摘要： A microcontroller has three types of memory; a ROM in which is recorded a program, a programmable first non-volatile memory, and a second non-volatile memory having programmable address data and instruction data zones. When the result of a detection performed by a comparator shows that address data sent over an address bus matches address data sent from the address data zone, an instruction data selection section selects and outputs instruction data stored in the instruction data zone corresponding to the address data in the address data zone, instead of outputting instruction data from the ordinary ROM.

    摘要翻译： 微控制器有三种类型的存储器; 其中记录有程序的ROM，可编程第一非易失性存储器和具有可编程地址数据和指令数据区的第二非易失性存储器。 当由比较器执行的检测结果表明通过地址总线发送的地址数据与从地址数据区发送的地址数据匹配时，指令数据选择部分选择并输出与地址数据相对应的指令数据区中存储的指令数据 而不是从普通ROM输出指令数据。

    Non-volatile memory device
    5.
    发明授权
    Non-volatile memory device 失效
    非易失性存储器件

    公开(公告)号：US5200923A

    公开(公告)日：1993-04-06

    申请号：US601919

    申请日：1990-10-22

    申请人： Kouji Sekiguchi

    发明人： Kouji Sekiguchi

    IPC分类号： G11C29/00 ,  G11C16/04 ,  G11C16/34 ,  G11C17/00 ,  G11C29/04 ,  G11C29/50

    CPC分类号： G11C16/3495 ,  G11C16/349 ,  G11C29/50 ,  G11C29/50004 ,  G06F2201/81 ,  G11C16/04 ,  G11C2029/5004

    摘要： A non-volatile memory device includes a memory cell array composed of transistor memory cells, a monitor cell array composed of two transistor monitor cells, a first circuit for writing "0" and then "1" in the first monitor cell and a data "1" and then "0" in the second monitor cell, whenever a data is written in one of the memory cells. A second circuit is for applying to the first monitor cell a voltage, V.sub.th1, which is higher than V.sub.th3 applied to the memory cells, and for applying a voltage, V.sub.th2, which is lower than V.sub.th3, to the second monitor cell, in response to a test mode signal, whenever a data is read from the memory cells. A third circuit is for discriminating a margin in the number of data writable operations of the memory cell by detecting monitor cell deterioration. This is accomplished on the basis of the on-off status of the two monitor cells when the second circuit applies V.sub.th1 and V.sub.th2 to the two monitor cells. Therefore, a margin of the memory cells can automatically be indirectly checked by checking a margin of the monitor cells activated under more strict conditions (e.g. the number of operations, threshold voltage, supply voltage, etc.), as compared with the memory cells.