Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US09036388B2

    公开(公告)日:2015-05-19

    申请号:US13043885

    申请日:2011-03-09

    申请人: Kousuke Komatsu

    发明人: Kousuke Komatsu

    IPC分类号: H02M7/537 H02M7/487 H02M7/00

    CPC分类号: H02M7/487 H02M7/003

    摘要: A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors.

    摘要翻译: 具有减少数量的用于驱动IGBT的电源的三电平逆变器电路的半导体器件。 该半导体装置包括直流电源的P和N之间的IGBT的串联电路和连接在串联电路的串联连接点和直流电源的中性点之间的交流开关元件。 串联电路和交流开关元件集成在一个模块中。 交流开关元件通过将反向并联连接有二极管的第一IGBT的集电极和二极管反向并联连接的第二IGBT的集电极连接而形成,中间端子设置在连接点 收藏家之间。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20110222325A1

    公开(公告)日:2011-09-15

    申请号:US13043885

    申请日:2011-03-09

    申请人: Kousuke Komatsu

    发明人: Kousuke Komatsu

    IPC分类号: H02M7/217

    CPC分类号: H02M7/487 H02M7/003

    摘要: A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors.

    摘要翻译: 具有减少数量的用于驱动IGBT的电源的三电平逆变器电路的半导体器件。 该半导体装置包括直流电源的P和N之间的IGBT的串联电路和连接在串联电路的串联连接点和直流电源的中性点之间的交流开关元件。 串联电路和交流开关元件集成在一个模块中。 交流开关元件通过将反向并联连接有二极管的第一IGBT的集电极和二极管反向并联连接的第二IGBT的集电极连接而形成,中间端子设置在连接点 收藏家之间。