公开(公告)号：US06666943B2

公开(公告)日：2003-12-23

申请号：US09998227

申请日：2001-12-03

申请人： Takatsugu Wada ,  Hidetoshi Nojiri ,  Masatake Akaike ,  Takehiko Kawasaki ,  Rei Kurashima ,  Satoshi Nozu ,  Kozo Hokayama

发明人： Takatsugu Wada ,  Hidetoshi Nojiri ,  Masatake Akaike ,  Takehiko Kawasaki ,  Rei Kurashima ,  Satoshi Nozu ,  Kozo Hokayama

IPC分类号： B44C1165

CPC分类号： H01L41/316 ,  B41J2/161 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1646 ,  H01L41/0926 ,  H01L41/1876 ,  H01L41/253 ,  H01L41/313 ,  Y10S117/915 ,  Y10S428/914 ,  Y10T428/2486 ,  Y10T428/24917

摘要： A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.