公开(公告)号：US09490127B2

公开(公告)日：2016-11-08

申请号：US14599916

申请日：2015-01-19

申请人： Kunihito Kato ,  Shuhei Oki ,  Takahiro Ito

发明人： Kunihito Kato ,  Shuhei Oki ,  Takahiro Ito

IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L21/683 ,  H01L21/263 ,  H01L29/32 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L21/265 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/6835 ,  H01L29/32 ,  H01L29/66348 ,  H01L29/7397 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A method includes: forming a front surface structure of a semiconductor element on a front surface side of a semiconductor substrate; forming crystal defects in the semiconductor substrate by implanting charged particles into the semiconductor substrate; subjecting the semiconductor substrate to a heat treatment after having formed the crystal defects; attaching a supporting plate on the front surface side of the semiconductor substrate after the heat treatment; thinning the semiconductor substrate by grinding a back surface side of the semiconductor substrate to which the supporting plate has been attached; and forming a back surface structure of the semiconductor element on a back surface of the thinned semiconductor substrate.

摘要翻译： 一种方法包括：在半导体衬底的正表面侧上形成半导体元件的前表面结构; 通过将带电粒子注入半导体衬底而在半导体衬底中形成晶体缺陷; 在形成晶体缺陷之后对半导体衬底进行热处理; 在热处理之后将支撑板附接在半导体基板的正面侧; 通过研磨已经附着有支撑板的半导体衬底的背面侧来使半导体衬底变薄; 以及在所述变薄的半导体衬底的后表面上形成所述半导体元件的背表面结构。

公开(公告)号：US20050111697A1

公开(公告)日：2005-05-26

申请号：US10788780

申请日：2004-02-27

申请人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

发明人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

IPC分类号： G06T1/00 ,  G06K9/00 ,  G06T7/00 ,  G06T7/20

CPC分类号： G06T7/269 ,  G06T7/74

摘要： A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.

摘要翻译： 移动单元在参考平面上移动。 移动单元具有用于检测参考平面上的物体的物体检测装置。 物体检测装置包括照相机，镜子和计算机。 镜子切割由相机接收的图像，使得照相机接收被分成参考平面图像和对象图像的图像。 参考平面图像包含参考平面。 对象图像包含对象，不包含参考平面。 因此，距离测量装置可以容易地分离包括物体的区域和不包括物体的区域，并且精确地检测到物体的距离。

公开(公告)号：US20150206758A1

公开(公告)日：2015-07-23

申请号：US14599916

申请日：2015-01-19

申请人： Kunihito Kato ,  Shuhei Oki ,  Takahiro Ito

发明人： Kunihito Kato ,  Shuhei Oki ,  Takahiro Ito

IPC分类号： H01L21/304 ,  H01L21/265

CPC分类号： H01L21/265 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/6835 ,  H01L29/32 ,  H01L29/66348 ,  H01L29/7397 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A method includes: forming a front surface structure of a semiconductor element on a front surface side of a semiconductor substrate; forming crystal defects in the semiconductor substrate by implanting charged particles into the semiconductor substrate; subjecting the semiconductor substrate to a heat treatment after having formed the crystal defects; attaching a supporting plate on the front surface side of the semiconductor substrate after the heat treatment; thinning the semiconductor substrate by grinding a back surface side of the semiconductor substrate to which the supporting plate has been attached; and forming a back surface structure of the semiconductor element on a back surface of the thinned semiconductor substrate.

摘要翻译： 一种方法包括：在半导体衬底的正表面侧上形成半导体元件的前表面结构; 通过将带电粒子注入半导体衬底而在半导体衬底中形成晶体缺陷; 在形成晶体缺陷之后对半导体衬底进行热处理; 在热处理之后将支撑板附接在半导体基板的正面侧; 通过研磨已经附着有支撑板的半导体衬底的背面侧来使半导体衬底变薄; 以及在所述变薄的半导体衬底的后表面上形成所述半导体元件的背表面结构。

公开(公告)号：US09214522B2

公开(公告)日：2015-12-15

申请号：US14134325

申请日：2013-12-19

申请人： Kunihito Kato ,  Toru Onishi

发明人： Kunihito Kato ,  Toru Onishi

IPC分类号： H01L21/00 ,  H01L29/40 ,  H01L21/78 ,  H01L21/683

CPC分类号： H01L29/408 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.

摘要翻译： 一种半导体晶片，包括：多个元件区域; 设置在所述多个元件区域的每一个中的表面电极; 设置在所述多个元件区域的每一个中并且所述半导体晶片的前表面的高度高于所述表面电极的周边中的所述表面电极的绝缘层; 并且形成在半导体晶片的前侧表面上的切割线槽，其包围表面电极的绝缘层，其间距离半导体晶片的前侧表面的高度低于绝缘层的高度， 并且延伸到半导体晶片的周边; 其中绝缘层形成有从表面电极的一侧延伸到切割线槽的连通通道。

公开(公告)号：US20140203411A1

公开(公告)日：2014-07-24

申请号：US14134325

申请日：2013-12-19

申请人： Kunihito KATO ,  Toru ONISHI

发明人： Kunihito KATO ,  Toru ONISHI

IPC分类号： H01L23/544 ,  H01L29/40 ,  H01L21/683 ,  H01L21/78

CPC分类号： H01L29/408 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.

摘要翻译： 一种半导体晶片，包括：多个元件区域; 设置在所述多个元件区域的每一个中的表面电极; 设置在所述多个元件区域的每一个中并且所述半导体晶片的前表面的高度高于所述表面电极的周边中的所述表面电极的绝缘层; 并且形成在半导体晶片的前侧表面上的切割线槽，其包围表面电极的绝缘层，其间距离半导体晶片的前侧表面的高度低于绝缘层的高度， 并且延伸到半导体晶片的周边; 其中绝缘层形成有从表面电极的一侧延伸到切割线槽的连通通道。

公开(公告)号：US07286688B2

公开(公告)日：2007-10-23

申请号：US10788780

申请日：2004-02-27

申请人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

发明人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

IPC分类号： G06K9/00

CPC分类号： G06T7/269 ,  G06T7/74

摘要： A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.

摘要翻译： 移动单元在参考平面上移动。 移动单元具有用于检测参考平面上的物体的物体检测装置。 物体检测装置包括照相机，镜子和计算机。 镜子切割由相机接收的图像，使得照相机接收被分成参考平面图像和对象图像的图像。 参考平面图像包含参考平面。 对象图像包含对象，不包含参考平面。 因此，距离测量装置可以容易地分离包括物体的区域和不包括物体的区域，并且精确地检测到物体的距离。