公开(公告)号：US08438520B2

公开(公告)日：2013-05-07

申请号：US13219813

申请日：2011-08-29

申请人： Kurt A. Carlsen ,  Charles S. Chiu ,  Umberto Garofano ,  Ze Gui Pang ,  Eric W. Tremble ,  David Toub ,  Ivan L. Wemple

发明人： Kurt A. Carlsen ,  Charles S. Chiu ,  Umberto Garofano ,  Ze Gui Pang ,  Eric W. Tremble ,  David Toub ,  Ivan L. Wemple

IPC分类号： G06F17/50

CPC分类号： G06F17/5036 ,  G06F17/5063 ,  G06F2217/78 ,  G06F2217/82

摘要： Methods, systems, computer programs, etc., determine the required number of decoupling capacitors, and approximate locations for the decoupling capacitors, for a region of an integrated circuit. Switching elements of the region are entered into a simulation program running on a computerized device. Also, a power distribution model of the region is entered into the simulation program, and a power-supply voltage compression target is entered into the simulation program. These methods, systems, etc., generate an upper number of decoupling capacitors required to satisfy the compression target when all the switching elements concurrently switch. For each switching element, the methods, systems, etc., generate a specific number of decoupling capacitors required to satisfy the compression when only the element switches, calculate a fraction of the specific number to the upper number, assign the fraction of the total number of decoupling capacitors to each switching circuit element, and place the fraction of the total number of decoupling capacitors in electrical proximity to the element.

摘要翻译： 方法，系统，计算机程序等为集成电路的一个区域确定所需数量的去耦电容器和去耦电容器的近似位置。 该区域的切换元件被输入到在计算机化设备上运行的仿真程序中。 此外，该区域的配电模型被输入到模拟程序中，并且将电源电压压缩目标输入到模拟程序中。 当所有开关元件同时切换时，这些方法，系统等产生满足压缩目标所需的去耦电容器的数量。 对于每个开关元件，方法，系统等产生特定数量的去耦电容器，以便在仅元件切换时满足压缩，将特定数量的一部分计算为上限，分配总数的分数 的去耦电容器到每个开关电路元件，并将去耦电容器总数的一部分放置在电气附近的元件上。

公开(公告)号：US07252858B2

公开(公告)日：2007-08-07

申请号：US10780341

申请日：2004-02-17

申请人： Kurt A. Carlsen

发明人： Kurt A. Carlsen

IPC分类号： C23C16/00

CPC分类号： B01D53/46 ,  C23C16/4412

摘要： A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber (12). The system includes a CVD abatement apparatus (20) and a resin-type absorber (22). The CVD abatement apparatus comprises an enclosure (24) that defines a chamber (26) for receiving the exhaust gas. The enclosure contains a plurality of removable substrates (32) arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the absorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

摘要翻译： 一种用于减轻DRAM处理室（12）的废气中所含的硅烷和胂的同时流动的系统和方法。 该系统包括CVD消除装置（20）和树脂型吸收器（22）。 CVD消除装置包括限定用于接收废气的室（26）的外壳（24）。 外壳包含多个可移除的基板（32），其被布置为外壳内的一系列挡板。 当废气流过CVD消除装置时，通过化学气相沉积将硅烷内的硅作为膜沉积在基板上。 胂继续通过CVD装置流到吸收器，在其中被其中所含的树脂吸附。 在膜已经达到特定厚度之后，可以将基板从外壳中取出，清除胶片并返回外壳进一步使用。

公开(公告)号：US08808453B2

公开(公告)日：2014-08-19

申请号：US11737447

申请日：2007-04-19

申请人： Kurt A. Carlsen

发明人： Kurt A. Carlsen

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： B01D53/46 ,  C23C16/4412

摘要： A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

摘要翻译： 一种用于减轻DRAM处理室的废气中所含的硅烷和胂同时流动的系统。 该系统包括CVD消除装置和树脂型吸附器。 CVD消除装置包括限定用于接收废气的室的外壳。 外壳包含多个可拆卸的基板，其被布置成在外壳内部的一系列挡板。 当废气流过CVD消除装置时，通过化学气相沉积将硅烷内的硅作为膜沉积在基板上。 胂继续通过CVD装置流到吸附器，吸附器被其中包含的树脂所吸附。 在膜已经达到特定厚度之后，可以将基板从外壳中取出，清除胶片并返回外壳进一步使用。

公开(公告)号：US20130054202A1

公开(公告)日：2013-02-28

申请号：US13219813

申请日：2011-08-29

申请人： Kurt A. Carlsen ,  Charles S. Chiu ,  Umberto Garofano ,  Ze Gui Pang ,  Eric W. Tremble ,  David Toub ,  Ivan L. Wemple

发明人： Kurt A. Carlsen ,  Charles S. Chiu ,  Umberto Garofano ,  Ze Gui Pang ,  Eric W. Tremble ,  David Toub ,  Ivan L. Wemple

IPC分类号： G06F17/50

CPC分类号： G06F17/5036 ,  G06F17/5063 ,  G06F2217/78 ,  G06F2217/82

摘要： Methods, systems, computer programs, etc., determine the required number of decoupling capacitors, and approximate locations for the decoupling capacitors, for a region of an integrated circuit. Switching elements of the region are entered into a simulation program running on a computerized device. Also, a power distribution model of the region is entered into the simulation program, and a power-supply voltage compression target is entered into the simulation program. These methods, systems, etc., generate an upper number of decoupling capacitors required to satisfy the compression target when all the switching elements concurrently switch. For each switching element, the methods, systems, etc., generate a specific number of decoupling capacitors required to satisfy the compression when only the element switches, calculate a fraction of the specific number to the upper number, assign the fraction of the total number of decoupling capacitors to each switching circuit element, and place the fraction of the total number of decoupling capacitors in electrical proximity to the element.

摘要翻译： 方法，系统，计算机程序等为集成电路的一个区域确定所需数量的去耦电容器和去耦电容器的近似位置。 该区域的切换元件被输入到在计算机化设备上运行的仿真程序中。 此外，该区域的配电模型被输入到模拟程序中，并且将电源电压压缩目标输入到模拟程序中。 当所有开关元件同时切换时，这些方法，系统等产生满足压缩目标所需的去耦电容器的数量。 对于每个开关元件，方法，系统等产生特定数量的去耦电容器，以便在仅元件切换时满足压缩，将特定数量的一部分计算为上限，分配总数的分数 的去耦电容器到每个开关电路元件，并将去耦电容器总数的一部分放置在电气附近的元件上。

公开(公告)号：US06821489B1

公开(公告)日：2004-11-23

申请号：US09685382

申请日：2000-10-10

申请人： Kurt A. Carlsen

发明人： Kurt A. Carlsen

IPC分类号： B01D5334

CPC分类号： B01D53/46 ,  C23C16/4412

摘要： A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber (12). The system includes a CVD abatement apparatus (20) and a resin-type adsorber (22). The CVD abatement apparatus comprises an enclosure (24) that defines a chamber (26) for receiving the exhaust gas. The enclosure contains a plurality of removable substrates (32) arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

公开(公告)号：US06253783B1

公开(公告)日：2001-07-03

申请号：US09695361

申请日：2000-10-24

申请人： Kurt A. Carlsen ,  James McManus ,  James Dietz

发明人： Kurt A. Carlsen ,  James McManus ,  James Dietz

IPC分类号： G05D706

CPC分类号： G05D16/2013 ,  Y10T137/0396 ,  Y10T137/7724 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve. The controller is capable of generating the aforementioned first signal in response to the signals from the first and second pressure transducers.

摘要翻译： 具有用于防止回流到次大气气体源（14）中的回流控制装置（10）的次大气气体输送系统（100）。 气体输送系统包括三个流体耦合的棒：吹扫棒（120），处理气体输送棒（124）和抽空棒（130）。 回流控制装置包括将副气氛气体源流体耦合到室（50）的气体管线（26），附接到次大气气体源的阀（20），用于阻止气源和气体之间的流体连通 在与气体管线流体连通并且位于阀和腔室之间流体连通的限流器（R）以及与气体管线流体连通并定位的第一和第二压力换能器（P1和P2） 在限流器的两侧。 每个换能器能够产生代表压力的信号。 回流控制装置还包括连接到第一和第二压力换能器和阀的阀控制器单元（40）。 控制器能够响应于来自第一和第二压力换能器的信号产生上述第一信号。

公开(公告)号：US20120125260A1

公开(公告)日：2012-05-24

申请号：US11737447

申请日：2007-04-19

申请人： Kurt A. Carlsen

发明人： Kurt A. Carlsen

IPC分类号： C23C16/56

CPC分类号： B01D53/46 ,  C23C16/4412

摘要： A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

摘要翻译： 一种用于减轻DRAM处理室的废气中所含的硅烷和胂同时流动的系统。 该系统包括CVD消除装置和树脂型吸附器。 CVD消除装置包括限定用于接收废气的室的外壳。 外壳包含多个可拆卸的基板，其被布置成在外壳内部的一系列挡板。 当废气流过CVD消除装置时，通过化学气相沉积将硅烷内的硅作为膜沉积在基板上。 胂继续通过CVD装置流到吸附器，吸附器被其中包含的树脂所吸附。 在膜已经达到特定厚度之后，可以将基板从外壳中取出，清除胶片并返回外壳进一步使用。

公开(公告)号：US07533357B2

公开(公告)日：2009-05-12

申请号：US11421863

申请日：2006-06-02

申请人： Kurt A. Carlsen ,  Amol A. Joshi ,  Faraydon Pakbaz ,  Sanjay Upreti

发明人： Kurt A. Carlsen ,  Amol A. Joshi ,  Faraydon Pakbaz ,  Sanjay Upreti

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： A method of estimating decaps required for an IC during an initial floorplanning design phase begins by obtaining voltage variation waveforms for a plurality of nodes in a power distribution network of the IC. Next, the method computes a minimum value for each of the voltage variation waveforms and selects voltage variation waveforms below a minimum threshold value. Following this, an FDA is performed on the voltage variation waveforms below the minimum threshold value to create a set of frequency values. This involves performing an FFT on each of the voltage variation waveforms to obtain frequency domain data, wherein frequencies that cause a drop in voltage in the plurality of nodes are filtered. The method then sorts the frequency domain data, wherein the frequency domain data is arranged in order based on amplitude value, total power, frequency components, and/or amplitude of imaginary components.

摘要翻译： 在初始布局规划设计阶段期间估计IC所需的分解的方法通过获得IC的配电网络中的多个节点的电压变化波形开始。 接下来，该方法计算每个电压变化波形的最小值，并选择低于最小阈值的电压变化波形。 此后，对低于最小阈值的电压变化波形执行FDA，以创建一组频率值。 这涉及对每个电压变化波形执行FFT以获得频域数据，其中导致多个节点中的电压下降的频率被滤波。 该方法然后对频域数据进行排序，其中基于振幅值，总功率，频率分量和/或虚部的振幅来顺序地布置频域数据。

公开(公告)号：US20070283299A1

公开(公告)日：2007-12-06

申请号：US11421863

申请日：2006-06-02

申请人： Kurt A Carlsen ,  Amol A. Joshi ,  Faraydon Pakbaz ,  Sanjay Upreti

发明人： Kurt A Carlsen ,  Amol A. Joshi ,  Faraydon Pakbaz ,  Sanjay Upreti

IPC分类号： G06F17/50

CPC分类号： G06F17/5036

摘要： A method of estimating decaps required for an IC during an initial floorplanning design phase begins by obtaining voltage variation waveforms for a plurality of nodes in a power distribution network of the IC. Next, the method computes a minimum value for each of the voltage variation waveforms and selects voltage variation waveforms below a minimum threshold value. Following this, an FDA is performed on the voltage variation waveforms below the minimum threshold value to create a set of frequency values. This involves performing an FFT on each of the voltage variation waveforms to obtain frequency domain data, wherein frequencies that cause a drop in voltage in the plurality of nodes are filtered. The method then sorts the frequency domain data, wherein the frequency domain data is arranged in order based on amplitude value, total power, frequency components, and/or amplitude of imaginary components.

摘要翻译： 在初始布局规划设计阶段期间估计IC所需的分解的方法通过获得IC的配电网络中的多个节点的电压变化波形开始。 接下来，该方法计算每个电压变化波形的最小值，并选择低于最小阈值的电压变化波形。 此后，对低于最小阈值的电压变化波形执行FDA，以创建一组频率值。 这涉及对每个电压变化波形执行FFT以获得频域数据，其中导致多个节点中的电压下降的频率被滤波。 该方法然后对频域数据进行排序，其中基于振幅值，总功率，频率分量和/或虚部的振幅来顺序地布置频域数据。

公开(公告)号：US6155289A

公开(公告)日：2000-12-05

申请号：US307650

申请日：1999-05-07

申请人： Kurt A. Carlsen ,  James McManus ,  James Dietz

发明人： Kurt A. Carlsen ,  James McManus ,  James Dietz

IPC分类号： G05D16/20 ,  G05D7/06

CPC分类号： G05D16/2013 ,  Y10T137/0396 ,  Y10T137/7724 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve. The controller is capable of generating the aforementioned first signal in response to the signals from the first and second pressure transducers.

摘要翻译： 具有用于防止回流到次大气气体源（14）中的回流控制装置（10）的次大气气体输送系统（100）。 气体输送系统包括三个流体耦合的棒：吹扫棒（120），处理气体输送棒（124）和抽空棒（130）。 回流控制装置包括将副气氛气体源流体耦合到室（50）的气体管线（26），附接到次大气气体源的阀（20），用于阻止气源和气体之间的流体连通 在与气体管线流体连通并且位于阀和腔室之间流体连通的限流器（R）以及与气体管线流体连通并定位的第一和第二压力换能器（P1和P2） 在限流器的两侧。 每个换能器能够产生代表压力的信号。 回流控制装置还包括连接到第一和第二压力换能器和阀的阀控制器单元（40）。 控制器能够响应于来自第一和第二压力换能器的信号产生上述第一信号。