Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
    3.
    发明授权
    Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels 有权
    利用次大气压气体供应船的自动切换气体输送系统

    公开(公告)号:US06302139B1

    公开(公告)日:2001-10-16

    申请号:US09356020

    申请日:1999-07-16

    申请人: James Dietz

    发明人: James Dietz

    IPC分类号: B08B9027

    摘要: An auto-switching sub-atmospheric pressure gas delivery system, for dispensing gas to a gas-consuming process unit, e.g., a semiconductor manufacturing tool. The gas delivery system uses a multiplicity of gas panels, wherein one panel is in active gas dispensing mode and supplying gas from a sub-atmospheric pressure gas source coupled to the flow circuitry of the panel. During the active gas dispensing operation in such panel, a second gas panel of the system undergoes purge, evacuation and fill transition to active gas dispensing condition, to permit switching to the second panel upon exhaustion of the sub-atmospheric pressure gas source coupled to the first gas panel without the occurrence of pressure spikes or flow perturbations.

    摘要翻译: 一种用于将气体分配到诸如半导体制造工具的耗气处理单元的自动切换次大气压气体输送系统。 气体输送系统使用多个气体面板,其中一个面板处于主动气体分配模式并且从耦合到面板的流动回路的次级大气压气体源供应气体。 在这种面板中的活性气体分配操作期间,系统的第二气体面板经过吹扫,排空和填充过渡到活性气体分配条件,以便在连接到 第一个气体面板,没有发生压力尖峰或流动扰动。

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    4.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 有权
    半导体加工系统的清洁

    公开(公告)号:US20100154835A1

    公开(公告)日:2010-06-24

    申请号:US12298727

    申请日:2007-04-26

    IPC分类号: B08B5/00

    摘要: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    摘要翻译: 一种清洁残留物的方法和装置,用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物,将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时,气相反应性材料与残余物选择性反应,并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时,气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2,XeF 4,XeF 6,NF 3,IF 5,IF 7,SF 6,C 2 F 6,F 2,CF 4,KrF 2,Cl 2,HCl,ClF 3,ClO 2,N 2 F 4,N 2 F 2,N 3 F, ,NH2F,HOBr,Br2,C3F8,C4F8,C5F8,CHF3,CH2F2,CH3F,COF2,HF,C2HF5,C2H2F4,C2H3F3,C2H4F2,C2H5F,C3F6和有机氯化物,如COCl2,CCl4,CHCl3,CH2Cl2和CH3Cl。

    Method of and system for sub-atmospheric gas delivery with backflow
control
    6.
    发明授权
    Method of and system for sub-atmospheric gas delivery with backflow control 有权
    具有回流控制的亚气体输送方法和系统

    公开(公告)号:US6155289A

    公开(公告)日:2000-12-05

    申请号:US307650

    申请日:1999-05-07

    IPC分类号: G05D16/20 G05D7/06

    摘要: A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve. The controller is capable of generating the aforementioned first signal in response to the signals from the first and second pressure transducers.

    摘要翻译: 具有用于防止回流到次大气气体源(14)中的回流控制装置(10)的次大气气体输送系统(100)。 气体输送系统包括三个流体耦合的棒:吹扫棒(120),处理气体输送棒(124)和抽空棒(130)。 回流控制装置包括将副气氛气体源流体耦合到室(50)的气体管线(26),附接到次大气气体源的阀(20),用于阻止气源和气体之间的流体连通 在与气体管线流体连通并且位于阀和腔室之间流体连通的限流器(R)以及与气体管线流体连通并定位的第一和第二压力换能器(P1和P2) 在限流器的两侧。 每个换能器能够产生代表压力的信号。 回流控制装置还包括连接到第一和第二压力换能器和阀的阀控制器单元(40)。 控制器能够响应于来自第一和第二压力换能器的信号产生上述第一信号。