公开(公告)号：US20050067055A1

公开(公告)日：2005-03-31

申请号：US10674647

申请日：2003-09-30

申请人： Kwang Choe ,  Keith Fogel ,  Siegfried Maurer ,  Ryan Mitchell ,  Devendra Sadana

发明人： Kwang Choe ,  Keith Fogel ,  Siegfried Maurer ,  Ryan Mitchell ,  Devendra Sadana

IPC分类号： H01L21/265 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/762 ,  C23C8/36

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  H01L21/3063 ,  H01L21/31662

摘要： A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.

摘要翻译： 提供了一种制造在含Si的上层下方具有薄但均匀的掩埋氧化物区域的硅绝缘体（SOI）的方法。 通过首先修饰含Si衬底的表面以包含大量的空位或空隙的浓度来制造SOI结构。 接下来，含硅层通常但不总是形成在衬底顶上，然后使用低氧剂量将氧离子注入到结构中。 然后将结构退火以将注入的氧离子转化成薄但均匀的热掩埋氧化物区域。

公开(公告)号：US20050056352A1

公开(公告)日：2005-03-17

申请号：US10662028

申请日：2003-09-12

申请人： Stephen Bedell ,  Kwang Choe ,  Keith Fogel ,  Devendra Sadana

发明人： Stephen Bedell ,  Kwang Choe ,  Keith Fogel ,  Devendra Sadana

IPC分类号： C22F1/10 ,  H01L21/20 ,  H01L21/762 ,  C22F1/00

CPC分类号： H01L21/76227 ,  C22F1/10 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/76245 ,  H01L29/78603

摘要： A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.

摘要翻译： 提供一种形成依赖于在含Ge层下形成的多孔硅层（或区域）的氧化的绝缘体上硅的简单且直接的方法。 该方法包括以下步骤：提供包括其中形成有富空穴的含Si衬底和含Si衬底顶部的含Ge层的结构; 将富含孔的区域转化为多孔区域; 并退火包括多孔区域的结构，以提供基本上松弛的绝缘体上的SiGe。

公开(公告)号：US20050067294A1

公开(公告)日：2005-03-31

申请号：US10674648

申请日：2003-09-30

申请人： Kwang Choe ,  Keith Fogel ,  Devendra Sadana

发明人： Kwang Choe ,  Keith Fogel ,  Devendra Sadana

IPC分类号： C25D7/12 ,  C25F3/04 ,  H01L21/316 ,  H01L21/762 ,  H01L21/786 ,  H01L21/84

CPC分类号： H01L21/76245 ,  C25F3/04

摘要： A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step and then anodizing the implanted and activated dopant region in a HF-containing solution. The graded porous Si has a relatively coarse top layer and a fine porous layer that is buried beneath the top layer. Upon a subsequent oxidation step, the fine buried porous layer is converted into a buried oxide, while the coarse top layer coalesces into a solid Si-containing over-layer by surface migration of Si atoms.

摘要翻译： 提供了通过分级多孔Si的氧化制造SOI衬底结构的方法。 通过首先将掺杂剂（p型或n型）注入到含Si衬底中，使用激活退火步骤激活掺杂剂，然后对含HF溶液中的注入和活化的掺杂剂区进行阳极化，形成渐变多孔Si。 分级多孔Si具有相对粗糙的顶层和埋在顶层下方的细多孔层。 在随后的氧化步骤中，精细埋入的多孔层被转化为掩埋氧化物，而粗顶层通过Si原子的表面迁移而结合成固体含Si的超层。