公开(公告)号：US20050056352A1

公开(公告)日：2005-03-17

申请号：US10662028

申请日：2003-09-12

申请人： Stephen Bedell ,  Kwang Choe ,  Keith Fogel ,  Devendra Sadana

发明人： Stephen Bedell ,  Kwang Choe ,  Keith Fogel ,  Devendra Sadana

IPC分类号： C22F1/10 ,  H01L21/20 ,  H01L21/762 ,  C22F1/00

CPC分类号： H01L21/76227 ,  C22F1/10 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/76245 ,  H01L29/78603

摘要： A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.

摘要翻译： 提供一种形成依赖于在含Ge层下形成的多孔硅层（或区域）的氧化的绝缘体上硅的简单且直接的方法。 该方法包括以下步骤：提供包括其中形成有富空穴的含Si衬底和含Si衬底顶部的含Ge层的结构; 将富含孔的区域转化为多孔区域; 并退火包括多孔区域的结构，以提供基本上松弛的绝缘体上的SiGe。

公开(公告)号：US20050067055A1

公开(公告)日：2005-03-31

申请号：US10674647

申请日：2003-09-30

申请人： Kwang Choe ,  Keith Fogel ,  Siegfried Maurer ,  Ryan Mitchell ,  Devendra Sadana

发明人： Kwang Choe ,  Keith Fogel ,  Siegfried Maurer ,  Ryan Mitchell ,  Devendra Sadana

IPC分类号： H01L21/265 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/762 ,  C23C8/36

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  H01L21/3063 ,  H01L21/31662

摘要： A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.

摘要翻译： 提供了一种制造在含Si的上层下方具有薄但均匀的掩埋氧化物区域的硅绝缘体（SOI）的方法。 通过首先修饰含Si衬底的表面以包含大量的空位或空隙的浓度来制造SOI结构。 接下来，含硅层通常但不总是形成在衬底顶上，然后使用低氧剂量将氧离子注入到结构中。 然后将结构退火以将注入的氧离子转化成薄但均匀的热掩埋氧化物区域。

公开(公告)号：US20050067294A1

公开(公告)日：2005-03-31

申请号：US10674648

申请日：2003-09-30

申请人： Kwang Choe ,  Keith Fogel ,  Devendra Sadana

发明人： Kwang Choe ,  Keith Fogel ,  Devendra Sadana

IPC分类号： C25D7/12 ,  C25F3/04 ,  H01L21/316 ,  H01L21/762 ,  H01L21/786 ,  H01L21/84

CPC分类号： H01L21/76245 ,  C25F3/04

摘要： A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step and then anodizing the implanted and activated dopant region in a HF-containing solution. The graded porous Si has a relatively coarse top layer and a fine porous layer that is buried beneath the top layer. Upon a subsequent oxidation step, the fine buried porous layer is converted into a buried oxide, while the coarse top layer coalesces into a solid Si-containing over-layer by surface migration of Si atoms.

摘要翻译： 提供了通过分级多孔Si的氧化制造SOI衬底结构的方法。 通过首先将掺杂剂（p型或n型）注入到含Si衬底中，使用激活退火步骤激活掺杂剂，然后对含HF溶液中的注入和活化的掺杂剂区进行阳极化，形成渐变多孔Si。 分级多孔Si具有相对粗糙的顶层和埋在顶层下方的细多孔层。 在随后的氧化步骤中，精细埋入的多孔层被转化为掩埋氧化物，而粗顶层通过Si原子的表面迁移而结合成固体含Si的超层。

公开(公告)号：US20070281439A1

公开(公告)日：2007-12-06

申请号：US11840389

申请日：2007-08-17

申请人： Stephen Bedell ,  Keith Fogel ,  Bruce Furman ,  Sampath Purushothaman ,  Devendra Sadana ,  Anna Topol

发明人： Stephen Bedell ,  Keith Fogel ,  Bruce Furman ,  Sampath Purushothaman ,  Devendra Sadana ,  Anna Topol

IPC分类号： H01L21/30 ,  H01L21/00

CPC分类号： H01L21/76259 ,  Y10T428/249961

摘要： Techniques for the fabrication of semiconductor devices are provided. In one aspect, a layer transfer structure is provided. The layer transfer structure comprises a carrier substrate having a porous region with a tuned porosity in combination with an implanted species defining a separation plane therein In another aspect, a method of forming a layer transfer structure is provided. In yet another aspect, a method of forming a thee dimensional integrated structure is provided.

摘要翻译： 提供了制造半导体器件的技术。 一方面，提供了层转移结构。 层转移结构包括具有调谐孔隙度的多孔区域的载体衬底以及限定分离平面的注入物质的组合。另一方面，提供了一种形成层转移结构的方法。 另一方面，提供了一种形成一维一体结构的方法。

公开(公告)号：US20070164356A1

公开(公告)日：2007-07-19

申请号：US11332564

申请日：2006-01-13

申请人： Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

发明人： Thomas Adam ,  Stephen Bedell ,  Joel de Souza ,  Keith Fogel ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L21/76243 ,  H01L29/66772 ,  H01L29/7849 ,  H01L29/78654

摘要： A strained (tensile or compressive) semiconductor-on-insulator material is provided in which a single semiconductor wafer and a separation by ion implantation of oxygen process are used. The separation by ion implantation of oxygen process, which includes oxygen ion implantation and annealing creates, a buried oxide layer within the material that is located beneath the strained semiconductor layer. In some embodiments, a graded semiconductor buffer layer is located beneath the buried oxide layer, while in other a doped semiconductor layer including Si doped with at least one of B or C is located beneath the buried oxide layer.

摘要翻译： 提供了一种应变（拉伸或压缩）半导体绝缘体材料，其中使用单个半导体晶片和通过氧气工艺的离子注入分离。 通过离子注入氧气工艺的分离，其中包括氧离子注入和退火，产生位于应变半导体层之下的材料内的掩埋氧化物层。 在一些实施例中，渐变半导体缓冲层位于掩埋氧化物层的下方，而在其它掺杂半导体层中，包含掺杂有B或C中的至少一个的掺杂半导体层位于掩埋氧化物层的下方。

公开(公告)号：US20060081837A1

公开(公告)日：2006-04-20

申请号：US11293774

申请日：2005-12-02

申请人： Stephen Bedell ,  Anthony Domenicucci ,  Keith Fogel ,  Effendi Leobandung ,  Devendra Sadana

发明人： Stephen Bedell ,  Anthony Domenicucci ,  Keith Fogel ,  Effendi Leobandung ,  Devendra Sadana

IPC分类号： H01L31/109

CPC分类号： H01L29/78696 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02667 ,  H01L21/02694 ,  H01L21/76251 ,  H01L29/7842

摘要： A method of forming a semiconductor structure comprising a first strained semiconductor layer over an insulating layer is provided in which the first strained semiconductor layer is relatively thin (less than about 500 Å) and has a low defect density (stacking faults and threading defects). The method of the present invention begins with forming a stress-providing layer, such a SiGe alloy layer over a structure comprising a first semiconductor layer that is located atop an insulating layer. The stress-providing layer and the first semiconductor layer are then patterned into at least one island and thereafter the structure containing the at least one island is heated to a temperature that causes strain transfer from the stress-providing layer to the first semiconductor layer. After strain transfer, the stress-providing layer is removed from the structure to form a first strained semiconductor island layer directly atop said insulating layer.

公开(公告)号：US20050048778A1

公开(公告)日：2005-03-03

申请号：US10654232

申请日：2003-09-03

申请人： Stephen Bedell ,  Huajie Chen ,  Keith Fogel ,  Devendra Sadana

发明人： Stephen Bedell ,  Huajie Chen ,  Keith Fogel ,  Devendra Sadana

IPC分类号： H01L29/161 ,  C30B29/52 ,  C30B31/02 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/04 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7624 ,  C30B29/52 ,  C30B31/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02694 ,  Y10T428/24917

摘要： High-quality, metastable SiGe alloys are formed on SOI substrates having an SOI layer of about 500 Å or less, the SiGe layers can remain substantially fully strained compared to identical SiGe layers formed on thicker SOI substrates and subsequently annealed and/or oxidized at high temperatures. The present invention thus provides a method of ‘frustrating’ metastable strained SiGe layers by growing them on thin, clean and high-quality SOI substrates.

摘要翻译： 在具有大约等于或小于等于或等于SOI层的SOI层的SOI衬底上形成高质量的亚稳态SiGe合金，与形成在较厚SOI衬底上的相同SiGe层相比，SiGe层可以保持基本上完全变形，并随后在高温下退火和/或氧化 温度。 因此，本发明提供了一种通过在薄的，清洁的和高质量的SOI衬底上生长它们来“挫败”亚稳应变的SiGe层的方法。

公开(公告)号：US20080116483A1

公开(公告)日：2008-05-22

申请号：US12027561

申请日：2008-02-07

申请人： Stephen Bedell ,  Huajie Chen ,  Anthony Domenicucci ,  Keith Fogel ,  Richard Murphy ,  Devendra Sadana

发明人： Stephen Bedell ,  Huajie Chen ,  Anthony Domenicucci ,  Keith Fogel ,  Richard Murphy ,  Devendra Sadana

IPC分类号： H01L29/165

CPC分类号： H01L21/26506 ,  H01L21/324 ,  H01L21/7624 ,  H01L21/76254 ,  H01L29/1054

摘要： A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to Ge diffusion. A heating step is then performed at a temperature that approaches the melting point of the final SiGe alloy and retards the formation of stacking fault defects while retaining Ge. The heating step permits interdiffusion of Ge throughout the first single crystal Si layer and the Ge-containing layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Moreover, because the heating step is carried out at a temperature that approaches the melting point of the final SiGe alloy, defects that persist in the single crystal SiGe layer as a result of relaxation are efficiently annihilated therefrom. In one embodiment, the heating step includes an oxidation process that is performed at a temperature from about 1230° to about 1320° C. for a time period of less than about 2 hours. This embodiment provides SGOI substrate that have minimal surface pitting and reduced crosshatching.

摘要翻译： 提供一种形成低缺陷，基本上松弛的绝缘体上硅衬底材料的方法。 该方法包括首先在耐Ge扩散的阻挡层上存在的第一单晶Si层的表面上形成含Ge层。 然后在接近最终SiGe合金的熔点的温度下进行加热步骤，并且在保留Ge的同时延缓形成堆垛层错缺陷。 加热步骤允许Ge遍及第一单晶Si层和含Ge层的相互扩散，从而在阻挡层顶部形成基本松弛的单晶SiGe层。 此外，由于加热步骤在接近最终SiGe合金的熔点的温度下进行，所以由于弛豫而在单晶SiGe层中持续存在的缺陷被有效地湮灭。 在一个实施方案中，加热步骤包括氧化过程，其在约1230℃至约1320℃的温度下进行约少于约2小时的时间。 该实施例提供具有最小表面点蚀和减少的交叉阴影的SGOI衬底。

公开(公告)号：US20060057403A1

公开(公告)日：2006-03-16

申请号：US11268096

申请日：2005-11-07

申请人： Stephen Bedell ,  Huajie Chen ,  Keith Fogel ,  Devendra Sadana

发明人： Stephen Bedell ,  Huajie Chen ,  Keith Fogel ,  Devendra Sadana

IPC分类号： B32B13/04 ,  B32B15/04 ,  B32B9/00

CPC分类号： H01L21/7624 ,  C30B29/52 ,  C30B31/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02694 ,  Y10T428/24917

摘要： High-quality, metastable SiGe alloys are formed on SOI substrates having an SOI layer of about 500 Å or less, the SiGe layers can remain substantially fully strained compared to identical SiGe layers formed on thicker SOI substrates and subsequently annealed and/or oxidized at high temperatures. The present invention thus provides a method of ‘frustrating’ metastable strained SiGe layers by growing them on thin, clean and high-quality SOI substrates.

公开(公告)号：US20060042542A1

公开(公告)日：2006-03-02

申请号：US10932598

申请日：2004-09-02

申请人： Stephen Bedell ,  Keith Fogel ,  Devendra Sadana

发明人： Stephen Bedell ,  Keith Fogel ,  Devendra Sadana

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/76254

摘要： A method of fabricating a high-quality relaxed SiGe-on-insulator substrate material is provided in which a prefabricated silicon-on-insulator substrate is first exposed to an unstrained Ge-containing source and then heated (annealed/oxidized) to cause Ge diffusion and thermal mixing of Ge within a single-crystal Si-containing layer of the prefabricated silicon-on-insulator substrate. The unstrained Ge-containing source can comprise a solid Ge-containing source, a gaseous Ge-containing source, or ions of Ge.