公开(公告)号：US5240721A

公开(公告)日：1993-08-31

申请号：US738122

申请日：1991-07-30

申请人： Kwang H. Yun

发明人： Kwang H. Yun

IPC分类号： C12M1/00 ,  A23B7/10 ,  A23K3/03 ,  C12M1/36 ,  C12N1/00

CPC分类号： A23K30/18 ,  Y10S426/807 ,  Y10S435/801 ,  Y10T428/166

摘要： A device for controlling fermentation and ensilagation of food for use with an apparatus for fermenting and ensilaging is disclosed. The device comprising a key input unit manually controlled by a user so as to set the rate of fermentation and the ripeness stage. A microprocessor controls the respective units in accordance with a preset program and in response to signals representing the present rate of fermentation and ripeness setting provided by the key input unit. A load control unit controls a heating unit and a cooling unit in response to a control signal applied thereto from the microprocessor and representing the present rate of fermentation and the ripeness stage. A temperature detecting unit detects the present temperature inside an ensilaging container and outputs a signal representing the detected temperature to the microprocessor. A displaying unit displays the respective operational states of the units in response to signal applied thereto from the microprocessor, thereby providing a desired fermented state of the materials being ensilaged by controlling the fermenting time in accordance with the preset rate of fermentation and the ripeness stage, and dropping the temperature inside the ensilaging container in order to execute an ensilaging mode of an ensilaging stage of preset three stages after the fermentation has been accomplished.

摘要翻译： 公开了一种用于控制用于发酵和屠宰装置的食品的发酵和繁殖的装置。 所述装置包括由用户手动控制的键输入单元，以便设定发酵速率和成熟阶段。 微处理器根据预设程序并响应于表示由键输入单元提供的发酵速率和成熟度设置的信号来控制各个单元。 负载控制单元响应于从微处理器施加到其上的控制信号来控制加热单元和冷却单元，并且表示当前的发酵速率和成熟阶段。 温度检测单元检测容纳容器内的当前温度，并将表示检测到的温度的信号输出到微处理器。 显示单元响应于从微处理器施加到其上的信号显示单元的各自的操作状态，从而通过根据预设的发酵速率和成熟阶段控制发酵时间来提供所要发酵的材料的发酵状态， 并且在发酵完成之后，将保温容器内的温度降低，以便执行预设三个阶段的烘烤阶段的烘烤模式。

公开(公告)号：US5336630A

公开(公告)日：1994-08-09

申请号：US975884

申请日：1992-11-13

申请人： Kwang H. Yun ,  Hee G. Lee ,  Seong J. Jang ,  Young K. Jun

发明人： Kwang H. Yun ,  Hee G. Lee ,  Seong J. Jang ,  Young K. Jun

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L27/10844 ,  G03F7/70425 ,  H01L27/10817 ,  Y10S438/943

摘要： A method of making a semiconductor memory device wherein a storage node having a plurality of pillars, capable of increasing the storage node surface area and thus the cell capacitance. The storage node is formed by depositing a storage node polysilicon film to have a thickness of 5,000 .ANG. to 6,000 .ANG. over a semiconductor substrate, forming a photoresist pattern over the polysilicon film in a direct electron beam writing manner, and etching the polysilicon film up to a depth of 1,000 .ANG. from the upper surfaces of a gate and a bit line by using the photoresist pattern. The formed storage node has a plurality of uniformly spaced pillars. Alternatively, the storage node is formed by forming a smoothing insulating film over the semiconductor substrate depositing a storage node polysilicon film over the smoothing insulating film, primarily photo exposing the semiconductor substrate using a glass mask having phase shifters, secondarily photo exposing the semiconductor substrate under the condition of rotating 90.degree. the semiconductor substrate, to form a check-board photoresist pattern, and patterning the polysilicon film using the photoresist pattern as a mask. The formed storage node has a plurality of pillars arranged independently or intersectionally.

摘要翻译： 一种制造半导体存储器件的方法，其中具有多个柱的存储节点，其能够增加存储节点表面积，从而增加单元电容。 存储节点通过在半导体衬底上沉积厚度为5000至6000的存储节点多晶硅膜形成，以直接电子束写入方式在多晶硅膜上形成光致抗蚀剂图案，并将多晶硅膜蚀刻至 通过使用光致抗蚀剂图案，从栅极和位线的上表面的深度为1000安培。 形成的存储节点具有多个均匀间隔的柱。 或者，存储节点通过在半导体衬底上形成平滑绝缘膜形成，在平滑绝缘膜上沉积存储节点多晶硅膜，主要是使用具有移相器的玻璃掩模对半导体衬底进行曝光，其次将半导体衬底照射到 旋转90°半导体衬底的条件，以形成校准板光致抗蚀剂图案，并使用光致抗蚀剂图案作为掩模对多晶硅膜进行构图。 形成的存储节点具有独立或相互排列的多个支柱。