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    Apparatus and method for channel coding in a communication system
    6.
    发明授权
    Apparatus and method for channel coding in a communication system 有权
    通信系统中信道编码的装置和方法

    公开(公告)号：US08737519B2

    公开(公告)日：2014-05-27

    申请号：US13103502

    申请日：2011-05-09

    申请人： Hong-Sil Jeong ,  Hyun-Koo Yang ,  Seho Myung ,  Kyeong-Cheol Yang ,  Kyung-Joong Kim ,  Seok-Ki Ahn

    发明人： Hong-Sil Jeong ,  Hyun-Koo Yang ,  Seho Myung ,  Kyeong-Cheol Yang ,  Kyung-Joong Kim ,  Seok-Ki Ahn

    IPC分类号： H04L27/00

    CPC分类号： H04L1/0057

    摘要： A method for channel coding by a transmitter in a communication system is provided. The method includes determining a degree of coded bits of a Luby-Transform (LT) code based on a coding rate of a pre-code and the number of coded bits of the LT code, selecting at least one associated bit used for coding of the coded bits of the LT code from among information bits of the LT code, depending on the determined degree, and generating the coded bits of the LT code by applying a coding function to the selected associated bits.

    摘要翻译： 提供了一种在通信系统中由发射机进行信道编码的方法。 该方法包括：基于预编码的编码率和LT码的编码比特数来确定Luby变换（LT）码的编码比特的程度，选择用于编码的至少一个相关比特 根据确定的程度从LT码的信息比特中的LT码的编码比特，以及通过对所选择的相关比特应用编码函数来生成LT码的编码比特。

    APPARATUS AND METHOD FOR CHANNEL CODING IN A COMMUNICATION SYSTEM
    7.
    发明申请
    APPARATUS AND METHOD FOR CHANNEL CODING IN A COMMUNICATION SYSTEM 有权
    通信系统中通道编码的装置和方法

    公开(公告)号：US20110274202A1

    公开(公告)日：2011-11-10

    申请号：US13103502

    申请日：2011-05-09

    申请人： Hong-Sil JEONG ,  Hyun-Koo Yang ,  Seho Myung ,  Kyeong-Cheol Yang ,  Kyung-Joong Kim ,  Seok-Ki Ahn

    发明人： Hong-Sil JEONG ,  Hyun-Koo Yang ,  Seho Myung ,  Kyeong-Cheol Yang ,  Kyung-Joong Kim ,  Seok-Ki Ahn

    IPC分类号： H04L27/00

    CPC分类号： H04L1/0057

    摘要： A method for channel coding by a transmitter in a communication system is provided. The method includes determining a degree of coded bits of a Luby-Transform (LT) code based on a coding rate of a pre-code and the number of coded bits of the LT code, selecting at least one associated bit used for coding of the coded bits of the LT code from among information bits of the LT code, depending on the determined degree, and generating the coded bits of the LT code by applying a coding function to the selected associated bits.

    摘要翻译： 提供了一种在通信系统中由发射机进行信道编码的方法。 该方法包括：基于预编码的编码率和LT码的编码比特数来确定Luby变换（LT）码的编码比特的程度，选择用于编码的至少一个相关比特 根据确定的程度从LT码的信息比特中的LT码的编码比特，以及通过对所选择的相关比特应用编码函数来生成LT码的编码比特。

    Quantum Dot Photovoltaic Device and Manufacturing Method Thereof
    8.
    发明申请
    Quantum Dot Photovoltaic Device and Manufacturing Method Thereof 有权
    量子点光伏器件及其制造方法

    公开(公告)号：US20110146775A1

    公开(公告)日：2011-06-23

    申请号：US13061297

    申请日：2009-08-28

    申请人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

    发明人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/035218 ,  H01L31/18

    摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.

    摘要翻译： 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。 更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点， 与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。