公开(公告)号：US20050059225A1

公开(公告)日：2005-03-17

申请号：US10605244

申请日：2003-09-17

申请人： Lance Genicola ,  Mark Hurley ,  Jeremy Kempisty ,  Paul Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

发明人： Lance Genicola ,  Mark Hurley ,  Jeremy Kempisty ,  Paul Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L21/31 ,  H01L21/425 ,  H01L21/469

CPC分类号： H01L21/67167 ,  H01L21/02329 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/67213 ,  H01L21/67253 ,  H01L29/513 ,  H01L29/518 ,  Y10T29/41

摘要： A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

摘要翻译： 一种用于监测氮化工艺的方法，包括：（a）提供半导体衬底; （b）在所述基板的顶表面上形成第一电介质层; （c）将一定量的界面物质引入底物; （d）去除第一电介质层; （e）在所述衬底的顶表面上形成第二电介质层; （f）测量衬底和第二介电层之间的界面陷阱的密度; （g）提供界面物质的量与界面捕集阱的密度之间的预定关系; 和（h）基于关系确定引入的界面物质的数量。

公开(公告)号：US20050153467A1

公开(公告)日：2005-07-14

申请号：US11076371

申请日：2005-03-09

申请人： Lance Genicola ,  Mark Hurley ,  Jeremy Kempisty ,  Paul Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

发明人： Lance Genicola ,  Mark Hurley ,  Jeremy Kempisty ,  Paul Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L21/66 ,  G01R31/26 ,  G06F19/00 ,  H01L21/336

CPC分类号： H01L21/67167 ,  H01L21/02329 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/67213 ,  H01L21/67253 ,  H01L29/513 ,  H01L29/518 ,  Y10T29/41

摘要： A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

摘要翻译： 一种用于监测氮化工艺的方法，包括：（a）提供半导体衬底; （b）在所述基板的顶表面上形成第一电介质层; （c）将一定量的界面物质引入底物; （d）去除第一电介质层; （e）在所述衬底的顶表面上形成第二电介质层; （f）测量衬底和第二介电层之间的界面陷阱的密度; （g）提供界面物质的量与界面捕集阱的密度之间的预定关系; 和（h）基于关系确定引入的界面物质的数量。

公开(公告)号：US07335969B2

公开(公告)日：2008-02-26

申请号：US11076371

申请日：2005-03-09

申请人： Lance Genicola ,  Mark J. Hurley ,  Jeremy J. Kempisty ,  Paul D. Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

发明人： Lance Genicola ,  Mark J. Hurley ,  Jeremy J. Kempisty ,  Paul D. Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

IPC分类号： H01L21/66

CPC分类号： H01L21/67167 ,  H01L21/02329 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/67213 ,  H01L21/67253 ,  H01L29/513 ,  H01L29/518 ,  Y10T29/41

摘要： A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

摘要翻译： 一种用于监测氮化工艺的方法，包括：（a）提供半导体衬底; （b）在所述基板的顶表面上形成第一电介质层; （c）将一定量的界面物质引入底物; （d）去除第一电介质层; （e）在所述衬底的顶表面上形成第二电介质层; （f）测量衬底和第二介电层之间的界面陷阱的密度; （g）提供界面物质的量与界面捕集阱的密度之间的预定关系; 和（h）基于关系确定引入的界面物质的数量。

公开(公告)号：US06929964B2

公开(公告)日：2005-08-16

申请号：US10605244

申请日：2003-09-17

申请人： Lance Genicola ,  Mark J. Hurley ,  Jeremy J. Kempisty ,  Paul D. Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

发明人： Lance Genicola ,  Mark J. Hurley ,  Jeremy J. Kempisty ,  Paul D. Kirsch ,  Ravikumar Ramachandran ,  Suri Hedge

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L29/51 ,  H01L21/66

CPC分类号： H01L21/67167 ,  H01L21/02329 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/28238 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/67213 ,  H01L21/67253 ,  H01L29/513 ,  H01L29/518 ,  Y10T29/41

摘要： A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

摘要翻译： 一种用于监测氮化工艺的方法，包括：（a）提供半导体衬底; （b）在所述基板的顶表面上形成第一电介质层; （c）将一定量的界面物质引入底物; （d）去除第一电介质层; （e）在所述衬底的顶表面上形成第二电介质层; （f）测量衬底和第二介电层之间的界面陷阱的密度; （g）提供界面物质的量与界面捕集阱的密度之间的预定关系; 和（h）基于关系确定引入的界面物质的数量。